Abstract: A semiconductor device of the present invention suppresses high frequency noise caused in a semiconductor device incorporating SiC elements. The semiconductor device includes semiconductor elements connected in series, a SiC diode element connected in parallel to the semiconductor element, and an oscillation suppressing circuit being connected in parallel to the semiconductor element and the SiC diode element and suppressing voltage fluctuation caused in the SiC diode element in response to turn-ons of the semiconductor element. The oscillation suppressing circuit suppresses voltage fluctuation caused in the SiC diode element in response to turn-ons of the semiconductor element thereby improving reliability of the semiconductor device.

Abstract: A semiconductor device of the present invention suppresses high frequency noise caused in a semiconductor device incorporating SiC elements. The semiconductor device includes semiconductor elements connected in series, a SiC diode element connected in parallel to the semiconductor element, and an oscillation suppressing circuit being connected in parallel to the semiconductor element and the SiC diode element and suppressing voltage fluctuation caused in the SiC diode element in response to turn-ons of the semiconductor element. The oscillation suppressing circuit suppresses voltage fluctuation caused in the SiC diode element in response to turn-ons of the semiconductor element thereby improving reliability of the semiconductor device.

Abstract: Provided is a semiconductor device for power switching applications which utilizes a plurality of gate terminals provided in pressure contact with gate electrodes, the gate terminal/electrodes situated so as separate current flow therethrough at time of gate turn off into separate components, thereby reducing the transverse voltage drop of the gate electrode. In one embodiment, the invention is applied to a gate turn off (GTO) thyristor, and in another embodiment, towards a reverse conducting GTO thyristor.