Abstract: A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature. A film forming material for forming molybdenum films, molybdenum silicide films, or tungsten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a biscyclopentadienylmolybdenum dihydride, a bismethylcyclopentadienylmolybdenum dihydride, a bisethylcyclopentadienylmolybdenum dihydride, and a bisisopropylcyclopentadienylmolybdenum dihydride.

Abstract: A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form tungsten films (tungsten silicide films or tungsten nitride films) of which purity is high at a low temperature. A film forming material for forming tungsten films, tungsten silicide films, or tungasten nitride films is provided, wherein a W source of said film is one or more chemical compounds selected from the group consisting of a biscyclopentadienyltungsten dihydride, a bismethylcyclopentadienyltungsten dihydride, a bisethylcyclopentadienyltungsten dihydride, and a bisisopropylcyclopentadienyltungsten dihydride.

Abstract: A technique capable of forming an NiSi film having excellent characteristics, which TiSi2 or CoSi2 produced thus far is not able to assume, without damaging a substrate is provided. A film forming material for forming a nickel silicide film or a Nickel film is provided, wherein an Ni source of said film is Ni(PF3)4.

Abstract: A high-quality insulating film is provided, of which a dielectric constant is lower than that of the conventional SiO2, and in which no leak current exceeding 10?8 A/cm2 occurs at the time of a voltage of 20 V.

Abstract: A technique capable of synthesizing organic polysilane having a high molecular weight at an excellent yield and simply even without employing a catalyst such as a copper halide is provided. In a method of manufacturing the organic polysilane by reacting dialkyldihalosilane with alkali metal, said reaction is carried out in THF.

Abstract: A technique is provided of forming silicide films usable for next-generation transistors through a CVD process. In the technique of forming a silicide film formed of Ni and Si, where one or more chemical compounds represented with the following general formula [I] are used as an Ni source: General Formula [I] where R1, R2, R3, R4, R5, R6, R7, R8, R9, or R10 is H or a hydrocarbon group.

Abstract: A technique is provided of creating high-purity amorphous gate oxides film through a CVD process. In the technique of creating Hf—Si oxide films through the chemical vapor deposition process, Si(OR)4 and Hf(NR?R?)4 are used.

Abstract: An undercoat film that prevents copper diffusion and has excellent copper conductor film binding, even when thin. In addition, a material for forming a copper undercoat film, characterized by a compound represented by the general formula: (R1R2)P—(R)n—Si (X1X2X3), wherein at least one of X1,X2 and X3 is a hydrolytic group, R1 and R2 are alkyl groups, R denotes a chain-form organic group formed from alkyl groups, aromatic rings or alkyl groups containing aromatic rings, and n is an integer from 1 to 6.

Abstract: A polyimide film F is brought into an intimate contact with a molding die 3 having a concave molding surface 3a so as to tightly close the open end thereof, and the polyimide film F is bent to deform only by the pressure difference of gas while being heated in a contactless manner. Molding is conducted by applying depressurization for a space 8 on the side of the molding die 3 relative to the polyimide film F while pressurizing the space 9 on the opposite side for the pressure difference at least in the final stage of the bending deformation so as to be in intimate contact with the concave molding surface 3a.

Abstract: A process for chemical vapor deposition includes depositing a film using a metal &bgr;-diketonate complex and an &agr;, &bgr;-unsaturated alcohol. The metal &bgr;-diketonate complex and the &agr;, &bgr;-unsaturated alcohol is contacted on the substrate at the same time, at different times or alternately.

Abstract: The present invention provides an underlayer film-forming material for copper, a method for forming the underlayer, an underlayer film for copper, and a semiconductor device including a substrate, the underlayer and copper wiring film, which enable the prevention of copper diffusion as well as provide superior adhesion to a copper wiring film, even if the film is thinner than conventional barrier metals. The underlayer film-forming material for copper includes a compound represented by a following general formula [I]: (R1R2)P—(R)—Si(X1X2X3), wherein at least one of X1, X2, and X3 represents a hydrolysable group; each of R1 and R2 represents an alkyl group; R represents a divalent linear organic group which is formed of an alkylene group, an aromatic ring, or an alkylene group including an aromatic ring; and n represents an integer of 1 to 6.

Abstract: A process for chemical vapor deposition includes depositing a film using a metal &bgr;-diketonate complex and an &agr;,&bgr;-unsaturated alcohol. The metal &bgr;-diketonate complex and the &agr;,&bgr;-unsaturated alcohol is contacted on the substrate at the same time, at different times or alternately.

Abstract: A process for chemical vapor deposition includes depositing a film using a metal &bgr;-diketonate complex and an &agr;, &bgr;-unsaturated alcohol. The metal &bgr;-diketonate complex and the &agr;, &bgr;-unsaturated alcohol is contacted on the substrate at the same time, at different times or alternately.

Abstract: A lighting reflection apparatus is provided, which improves controllability and sensitivity in changing or controlling an outgoing light characteristic. A reflector is composed of a substrate made of a film-like polyimide molded item shaped using only a difference between pressures applied from respective surfaces of a film-like item while subjecting the film-like item to plasticization with non-contact heating and having in itself a power of maintaining a three-dimensional shape independently or in the form of a single layer, and a reflection surface formed on an inner surface of the substrate. Then, outgoing light is changed or controlled by causing elastic deformation in the reflector by pressing the reflector with pressing means. Since the reflection surface of the reflector is formed by complete non-contact method, it is so smooth that sensitivity in controlling the outgoing light can be improved. Also, since the reflector made of an elastic film is deformed, satisfactory controllability can be attained.

Abstract: A reflector substrate (1) adapted for use in illumination device (8) comprises an a molded aromatic polyimide film wherein the film has a glass transition temperature from 210 to 290° C. and said polyimide film has structural units of general formula (I) and (II): wherein R1 is selected from the group consisting of: wherein R2 is selected from the group consisting of: and said polyimide film has the molar ratio X:Y from 100:0 to 20:80.

Abstract: A polyimide film F is brought into an intimate contact with a molding die 3 having a concave molding surface 3a so as to tightly close the open end thereof, and the polyimide film F is bent to deform only by the pressure difference of gas while being heated in a contactless manner. Molding is conducted by applying depressurization for a space 8 on the side of the molding die 3 relative to the polyimide film F while pressurizing the space 9 on the opposite side for the pressure difference at least in the final stage of the bending deformation so as to be in intimate contact with the concave molding surface 3a.

Abstract: A process for chemical vapor deposition includes depositing a film using a metal &bgr;-diketonate complex and an &agr;, &bgr;-unsaturated alcohol. The metal &bgr;-diketonate complex and the &agr;, &bgr;-unsaturated alcohol is contacted on the substrate at the same time, at different times or alternately.

Abstract: The optical sensor of the present invention detects both the existence and concentration of substances by changing from light leakage mode to wave guide mode when the sensor is exposed to the substances to be detected. The changes in the mode results in a large change in optical output. This change is measured and the substance is identified and/or measured with high sensitivity. The change in light leakage mode to wave guide mode of the sensor is possible by having a clad material around the core material, with the clad material decreasing in the index of refraction when exposed to the substance to be detected. When the index of refraction of the clad becomes less than that of the core material, the sensor changes from the light leakage mode and operates in the wave guide mode. Changes in light intensity output from the sensor is measured over time, and correlated to the substance to be detected.

Abstract: A process for producing a .beta. copper diketone complex which consists of the steps: (a) mixing and reacting Cu.sub.2 O, 1,1,1,5,5,5-Hexafluoro-2, 4-pentanedione, and an additional cuprous L, an electronic donator; and (b) dehydrating the crude material, which is performed at the same time and/or right after the reaction in step (a).

Abstract: By reacting Si(OR).sub.4 with HF, FSi (OR).sub.3 of high purity can be obtained easily and economically.