Abstract: A composite member includes: a substrate formed of a composite material containing a plurality of diamond grains and a metal phase; and a coating layer made of metal. The surface of the substrate includes a surface of the metal phase, and a protrusion formed of a part of at least one diamond grain of the diamond grains and protruding from the surface of the metal phase. In a plan view, the coating layer includes a metal coating portion, and a grain coating portion. A ratio of a thickness of the grain coating portion to a thickness of the metal coating portion is equal to or less than 0.80. The coating layer has a surface roughness as an arithmetic mean roughness Ra of less than 2.0 ?m.

Abstract: A heat radiation member excellent in electrical insulation and better in thermal conduction is provided. The heat radiation member includes a substrate composed of a composite material containing diamond and a metallic phase, an insulating plate provided on at least a part of front and rear surfaces of the substrate and composed of an aluminum nitride, and a single bonding layer interposed between the substrate and the insulating plate, the heat radiation member having thermal conductivity not lower than 400 W/m·K.

Abstract: A composite member having an excellent heat resistance is provided. The composite member includes: a substrate composed of a composite material including a non-metal phase and a metal phase; and a metal layer that covers at least a portion of a surface of the substrate, wherein a metal included in each of the metal phase and the metal layer is mainly composed of Ag, and a ratio of a content of Cu to a total content of Ag and Cu in a boundary region of the metal layer with the substrate is less than or equal to 20 atomic %.

Abstract: A composite member includes: a substrate formed of a composite material containing a plurality of diamond grains and a metal phase; and a coating layer made of metal. The surface of the substrate includes a surface of the metal phase, and a protrusion formed of a part of at least one diamond grain of the diamond grains and protruding from the surface of the metal phase. In a plan view, the coating layer includes a metal coating portion, and a grain coating portion. A ratio of a thickness of the grain coating portion to a thickness of the metal coating portion is equal to or less than 0.80. The coating layer has a surface roughness as an arithmetic mean roughness Ra of less than 2.0 ?m.

Abstract: Provided are a heat sink material made of an alloy or a composite material including two or more types of elements which has an end surface that makes possible formation of an edge portion on which at least a laser element is mounted, a manufacturing method for the same, and a semiconductor laser device including the heat sink material. A heat sink material (10) is made of an alloy or a composite material including two or more types of elements, and provided with a main surface having a relatively large area and a secondary surface having a relatively small area which crosses the main surface, and the secondary surface includes a surface on which a discharging process has been carried out using a discharge wire (200) that is placed approximately parallel to the main surface.

Abstract: The invention provides a semiconductor element mounting substrate that, by virtue of an improvement in thermal conduction efficiency between the substrate and another member, can reliably prevent, for example, a light emitting element such as a semiconductor laser from causing a defective operation by heat generation of itself, by taking full advantage of high thermal conductivity of a diamond composite material.

Abstract: Provided are a heat sink material made of an alloy or a composite material including two or more types of elements which has an end surface that makes possible formation of an edge portion on which at least a laser element is mounted, a manufacturing method for the same, and a semiconductor laser device including the heat sink material. A heat sink material (10) is made of an alloy or a composite material including two or more types of elements, and provided with a main surface having a relatively large area and a secondary surface having a relatively small area which crosses the main surface, and the secondary surface includes a surface on which a discharging process has been carried out using a discharge wire (200) that is placed approximately parallel to the main surface.

Abstract: This invention relates to a high thermal conductivity composite material which comprises diamond particles and a copper matrix useful as electronic heat sinks for electronics parts, particularly for semiconductor lasers, high performance MPUs (micro-processing units), etc., also to a process for the production of the same and a heat sink using the same. According to the high thermal conductivity diamond sintered compact of the present invention, in particular, there can be provided a heat sink having a high thermal conductivity as well as matching of thermal expansions, most suitable for mounting a large sized and high thermal load semiconductor chip, for example, high output semiconductor lasers, high performance MPU, etc. Furthermore, the properties such as thermal conductivity and thermal expansion can freely be controlled, so it is possible to select the most suitable heat sink depending upon the features and designs of elements to be mounted.

Abstract: The invention provides a semiconductor element mounting substrate that, by virtue of an improvement in thermal conduction efficiency between the substrate and another member, can reliably prevent, for example, a light emitting element such as a semiconductor laser from causing a defective operation by heat generation of itself, by taking full advantage of high thermal conductivity of a diamond composite material.

Abstract: Provided are a heat sink material made of an alloy or a composite material including two or more types of elements which has an end surface that makes possible formation of an edge portion on which at least a laser element is mounted, a manufacturing method for the same, and a semiconductor laser device including the heat sink material. A heat sink material (10) is made of an alloy or a composite material including two or more types of elements, and provided with a main surface having a relatively large area and a secondary surface having a relatively small area which crosses the main surface, and the secondary surface includes a surface on which a discharging process has been carried out using a discharge wire (200) that is placed approximately parallel to the main surface.

Abstract: This invention relates to a high thermal conductivity composite material which comprises diamond particles and a copper matrix useful as electronic heat sinks for electronics parts, particularly for semiconductor lasers, high performance MPUs (micro-processing units), etc., also to a process for the production of the same and a heat sink using the same. According to the high thermal conductivity diamond sintered compact of the present invention, in particular, there can be provided a heat sink having a high thermal conductivity as well as matching of thermal expansions, most suitable for mounting a large sized and high thermal load semiconductor chip, for example, high output semiconductor lasers, high performance MPU, etc. Furthermore, the properties such as thermal conductivity and thermal expansion can freely be controlled, so it is possible to select the most suitable heat sink depending upon the features and designs of elements to be mounted.

Abstract: A bonding tool capable of uniformly pressing all electrodes of a semiconductor element and surely bonding all the electrodes and leads, even if the end pressing surface of a tool end part of a bonding tool is enlarged with the large-sized and long-sized tendency of semiconductor elements, is provided in which an end pressing surface of a tool end part fitted to a shank is composed of a hard material, characterized in that the end pressing surface is gradually curved to form a concave surface from the peripheral part to the central part at an application temperature of the bonding tool and the degree of flatness of the concave end pressing surface is in the range of 1 to 5 .mu.m at the application temperature of the bonding tool.

Abstract: A bonding tool capable of uniformly pressing all electrodes of a semiconductor element and surely bonding all the electrodes and leads, even if the end pressing surface of a tool end part of a bonding tool is enlarged with the large-sized and long-sized tendency of semiconductor elements, is provided in which an end pressing surface of a tool end part fitted to a shank is composed of a hard material, characterized in that the end pressing surface is gradually curved to form a concave surface from the peripheral part to the central part at an application temperature of the bonding tool and the degree of flatness of tile concave end pressing surface is in the range of 1 to 5 .mu.m at the application temperature of the bonding tool.