Patents by Inventor Hideaki Ohtake

Hideaki Ohtake has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of producing semiconductor device having multilayer conductive lines
    Patent number: 4816424
    Abstract: A triple-layer electrode structure or a multilayer interconnecting structure of a semiconductor device comprising a contact (a lower conductive) layer of aluminum or its alloy which comes into contact with a silicon substrate, a barrier layer of refractory metal nitride (e.g. titanium nitride) and refractory metal (e.g., tungsten), and a (upper) conductive layer of aluminum or its alloy. The TiN-W barrier layer prevents overdissolution of silicon into aluminum in spite of heat-treatment at a relatively elevated temperature. The barrier layer is formed by sintering a mixture of refractory metal nitride powder and refractory metal powder to form a target which is sputter deposited on the contact layer in an atomsphere excluding gaseous nitrogen.
    Type: Grant
    Filed: November 10, 1986
    Date of Patent: March 28, 1989
    Assignee: Fujitsu Limited
    Inventors: Kiyoshi Watanabe, Tohru Takeuchi, Hideaki Ohtake, Ichiro Fujita