Abstract: A low impurity concentration semiconductor layer (2) of n−-type is formed by epitaxial growth method on a high impurity concentration semiconductor substrate (1) of n+-type. A plurality of p+-type semiconductor regions (6) are formed in the surface side of the semiconductor layer (2). On the surface of the semiconductor layer and p+-type semiconductor regions, a metal layer (3) is provided to form Schottky barrier with the semiconductor layer (2). Further, p+-type semiconductor regions are arranged regularly so that the plan configuration of each of the semiconductor regions on the surface side of n−-type semiconductor layer is a circularity or a polygon, and that the furthest portion of the plan configulation neighbors or overlaps with immediate adjacent ones, or so that the ratio of the total area of the semiconductor regions (6) to the other portion except for the regions is (2 to 6):1.

Abstract: A Schottky barrier semiconductor device comprises an n+-type semiconductor substrate, an n−-type semiconductor layer grown on the semiconductor substrate by epitaxial growth, and two or more adjacent p+-type semiconductor regions formed on a surface of the semiconductor layer. The device comprises a metal layer having a Schottky barrier on the surface of an active region of the semiconductor layer. The p+-type semiconductor regions are formed so that a ratio of a distance between the adjacent p+-type semiconductor regions to a distance between the bottom surface of the p+-type semiconductor region and the bottom surface of the semiconductor layer may be the ratio of 1 to 1 through 2.