Patents by Inventor Hideaki Tsugane
Hideaki Tsugane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170345629Abstract: Reliability of a semiconductor device is improved, and use efficiency of a sputtering apparatus is increased. When depositing thin films over a main surface of a semiconductor wafer using a magnetron sputtering apparatus in which a collimator is installed in a space between the semiconductor wafer and a target installed in a chamber, a region inner than a peripheral part of the collimator is made thinner than the peripheral part. Thus, it becomes possible to suppress deterioration in uniformity of the thin film in a wafer plane, which may occur as the integrated usage of the target increases.Type: ApplicationFiled: August 21, 2017Publication date: November 30, 2017Inventors: Takashi HAMAYA, Hideaki TSUGANE, Hidenori SUZUKI
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Patent number: 9748081Abstract: Reliability of a semiconductor device is improved, and use efficiency of a sputtering apparatus is increased. When depositing thin films over a main surface of a semiconductor wafer using a magnetron sputtering apparatus in which a collimator is installed in a space between the semiconductor wafer and a target installed in a chamber, a region inner than a peripheral part of the collimator is made thinner than the peripheral part. Thus, it becomes possible to suppress deterioration in uniformity of the thin film in a wafer plane, which may occur as the integrated usage of the target increases.Type: GrantFiled: September 22, 2015Date of Patent: August 29, 2017Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Takashi Hamaya, Hideaki Tsugane, Hidenori Suzuki
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Publication number: 20160086779Abstract: Reliability of a semiconductor device is improved, and use efficiency of a sputtering apparatus is increased. When depositing thin films over a main surface of a semiconductor wafer using a magnetron sputtering apparatus in which a collimator is installed in a space between the semiconductor wafer and a target installed in a chamber, a region inner than a peripheral part of the collimator is made thinner than the peripheral part. Thus, it becomes possible to suppress deterioration in uniformity of the thin film in a wafer plane, which may occur as the integrated usage of the target increases.Type: ApplicationFiled: September 22, 2015Publication date: March 24, 2016Inventors: Takashi HAMAYA, Hideaki TSUGANE, Hidenori SUZUKI
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Patent number: 7566662Abstract: Provided is a method of manufacturing a semiconductor device. After a semiconductor wafer is placed over a wafer stage with which a dry cleaning chamber of a film forming apparatus is equipped, dry cleaning treatment is given over the surface of the semiconductor wafer with a reducing gas. Then, the semiconductor wafer is heat treated at a first temperature of from 100 to 150° C. by using a shower head kept at 180° C. The semiconductor wafer is then vacuum-transferred to a heat treatment chamber, wherein the semiconductor wafer is heat treated at a second temperature of from 150 to 400° C. A product remaining over the main surface of the semiconductor wafer is thus removed. The present invention makes it possible to manufacture a semiconductor device having improved reliability and production yield by reducing variations in the electrical properties of a nickel silicide layer.Type: GrantFiled: April 10, 2007Date of Patent: July 28, 2009Assignee: Renesas Technology Corp.Inventors: Takuya Futase, Hideaki Tsugane, Mitsuo Kimoto, Hidenori Suzuki
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Publication number: 20070238321Abstract: Provided is a method of manufacturing a semiconductor device. After a semiconductor wafer is placed over a wafer stage with which a dry cleaning chamber of a film forming apparatus is equipped, dry cleaning treatment is given over the surface of the semiconductor wafer with a reducing gas. Then, the semiconductor wafer is heat treated at a first temperature of from 100 to 150° C. by using a shower head kept at 180° C. The semiconductor wafer is then vacuum-transferred to a heat treatment chamber, wherein the semiconductor wafer is heat treated at a second temperature of from 150 to 400° C. A product remaining over the main surface of the semiconductor wafer is thus removed. The present invention makes it possible to manufacture a semiconductor device having improved reliability and production yield by reducing variations in the electrical properties of a nickel silicide layer.Type: ApplicationFiled: April 10, 2007Publication date: October 11, 2007Inventors: Takuya Futase, Hideaki Tsugane, Mitsuo Kimoto, Hidenori Suzuki
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Patent number: 7088001Abstract: In order to form a good contact between metallizations and improve the reliability and product yield of a semiconductor integrated circuit device, a plug is formed in a contact hole by depositing a first sputter film inside of the contact hole by traditional sputtering, depositing a second sputter film over the first sputter film by long throw sputtering, depositing a W film over the second sputtering film by CVD and removing the first and second sputter films and the W film from the outside of the contact hole. The barrier properties can be improved by constituting a barrier film from the first sputter film and second sputter film which are different in directivity.Type: GrantFiled: May 13, 2004Date of Patent: August 8, 2006Assignees: Hitachi, Ltd., Hitachi Ulsi Systems Co., Ltd.Inventors: Hiroshi Ashihara, Tatsuyuki Saito, Uitsu Tanaka, Hidenori Suzuki, Hideaki Tsugane, Yasuko Yoshida, Ken Okutani
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Publication number: 20040235289Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.Type: ApplicationFiled: June 22, 2004Publication date: November 25, 2004Inventors: Masayuki Suzuki, Shinji Nishihara, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda, Hiroyuki Uchiyama, Hideaki Tsugane, Yoshiaki Yoshiura
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Publication number: 20040207095Abstract: In order to form a good contact between metallizations and improve the reliability and product yield of a semiconductor integrated circuit device, a plug is formed in a contact hole by depositing a first sputter film inside of the contact hole by traditional sputtering, depositing a second sputter film over the first sputter film by long throw sputtering, depositing a W film over the second sputtering film by CVD and removing the first and second sputter films and the W film from the outside of the contact hole. The barrier properties can be improved by constituting a barrier film from the first sputter film and second sputter film which are different in directivity.Type: ApplicationFiled: May 13, 2004Publication date: October 21, 2004Inventors: Hiroshi Ashihara, Tatsuyuki Saito, Uitsu Tanaka, Hidenori Suzuki, Hideaki Tsugane, Yasuko Yoshida, Ken Okutani
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Patent number: 6780757Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.Type: GrantFiled: May 7, 2003Date of Patent: August 24, 2004Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd.Inventors: Masayuki Suzuki, Shinji Nishihara, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda, Hiroyuki Uchiyama, Hideaki Tsugane, Yoshiaki Yoshiura
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Patent number: 6764945Abstract: In order to form a good contact between metallizations and improve the reliability and product yield of a semiconductor integrated circuit device, a plug is formed in a contact hole by depositing a first sputter film inside of the contact hole by traditional sputtering, depositing a second sputter film over the first sputter film by long throw sputtering, depositing a W film over the second sputtering film by CVD and removing the first and second sputter films and the W film from the outside of the contact hole. The barrier properties can be improved by constituting a barrier film from the first sputter film and second sputter film which are different in directivity.Type: GrantFiled: April 2, 2001Date of Patent: July 20, 2004Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd.Inventors: Hiroshi Ashihara, Tatsuyuki Saito, Uitsu Tanaka, Hidenori Suzuki, Hideaki Tsugane, Yasuko Yoshida, Ken Okutani
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Publication number: 20030199161Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.Type: ApplicationFiled: May 7, 2003Publication date: October 23, 2003Inventors: Masayuki Suzuki, Shinji Nishihara, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda, Hiroyuki Uchiyama, Hideaki Tsugane, Yoshiaki Yoshiura
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Patent number: 6583049Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.Type: GrantFiled: December 3, 2001Date of Patent: June 24, 2003Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp., Hitachi Microcomputer System Ltd.Inventors: Masayuki Suzuki, Shinji Nishihara, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda, Hiroyuki Uchiyama, Hideaki Tsugane, Yoshiaki Yoshiura
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Patent number: 6538329Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.Type: GrantFiled: August 21, 2001Date of Patent: March 25, 2003Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp., Hitachi Microcomputer System Ltd.Inventors: Masayuki Suzuki, Shinji Nishihara, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda, Hiroyuki Uchiyama, Hideaki Tsugane, Yoshiaki Yoshiura
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Publication number: 20020115281Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.Type: ApplicationFiled: December 3, 2001Publication date: August 22, 2002Inventors: Masayuki Suzuki, Shinji Nishihara, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda, Hiroyuki Uchiyama, Hideaki Tsugane, Yoshiaki Yoshiura
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Publication number: 20020098670Abstract: In order to form a good contact between metallizations and improve the reliability and product yield of a semiconductor integrated circuit device, a plug is formed in a contact hole by depositing a first sputter film inside of the contact hole by traditional sputtering, depositing a second sputter film over the first sputter film by long throw sputtering, depositing a W film over the second sputtering film by CVD and removing the first and second sputter films and the W film from the outside of the contact hole. The barrier properties can be improved by constituting a barrier film from the first sputter film and second sputter film which are different in directivity.Type: ApplicationFiled: April 2, 2001Publication date: July 25, 2002Inventors: Hiroshi Ashihara, Tatsuyuki Saito, Uitsu Tanaka, Hidenori Suzuki, Hideaki Tsugane, Yasuko Yoshida, Ken Okutani
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Patent number: 6372554Abstract: A pattern of more than one conductive layer overlying a fuse formed in a TEG region is subject to OR processing; further, a combined or “synthetic” pattern with an opening pattern of one or more testing pads connected to said fuse added thereto is copied by transfer printing techniques to a photosensitive resin layer that is coated on the surface of a semiconductor wafer, thereby forcing the resin layer to reside only in a selected area of a scribe region, to which area the synthetic pattern has been transferred.Type: GrantFiled: September 7, 1999Date of Patent: April 16, 2002Assignees: Hitachi, Ltd., Hitachi ULSI Systems Co., Ltd.Inventors: Keizo Kawakita, Kazuhiko Kajigaya, Seiji Narui, Kiyoshi Nakai, Kazunari Suzuki, Hideaki Tsugane, Fumiyoshi Sato
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Publication number: 20020019124Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.Type: ApplicationFiled: August 21, 2001Publication date: February 14, 2002Inventors: Masayuki Suzuki, Shinji Nishihara, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda, Hiroyuki Uchiyama, Hideaki Tsugane, Yoshiaki Yoshiura
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Patent number: 6300237Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminium film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.Type: GrantFiled: February 8, 1999Date of Patent: October 9, 2001Assignees: Hitachi Ltd., Hitachi ULSI Engineering Corp., Hitachi Microcomputer System Ltd.Inventors: Masayuki Suzuki, Shinji Nishihara, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda, Hiroyuki Uchiyama, Hideaki Tsugane, Yoshiaki Yoshiura
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Patent number: 5904556Abstract: A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminium film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.Type: GrantFiled: January 11, 1996Date of Patent: May 18, 1999Assignees: Hitachi, Ltd., Hitachi ULSI Engineering Corp., Hitachi Microcomputer System, Ltd.Inventors: Masayuki Suzuki, Shinji Nishihara, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda, Hiroyuki Uchiyama, Hideaki Tsugane, Yoshiaki Yoshiura