Patents by Inventor Hidehiko Sakaki

Hidehiko Sakaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a V-shaped gate electrode in a semiconductor device, and the structure of the electrode
    Patent number: 5804474
    Abstract: A method for forming a V-shaped gate electrode on a semiconductor substrate includes the following steps: A first gate opening is formed in a first resist between a source and a drain formed on a semiconductor substrate, and dummy openings are formed near both sides of the first gate opening. By baking the first resist, convex portions thereof which rise steeply are formed between the first gate opening and the dummy openings. A second resist is formed to overlay the first resist convex portions and the first gate opening. The second resist is removed from the first gate opening, and a second gate opening larger than the first gate opening is formed in the second resist above the first gate opening. Metal for the V-shaped gate electrode is deposited through the second gate opening on the sides of the first resist convex portions rising steeply from the bottom of the first gate opening.
    Type: Grant
    Filed: April 4, 1997
    Date of Patent: September 8, 1998
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Hidehiko Sakaki, Yasushi Yokoi, Koji Monden