Patents by Inventor Hidehiro Fujiwara
Hidehiro Fujiwara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11978723Abstract: A 3D IC structure includes multiple die layers, such as a top die layer and a bottom die layer. The top die layer and/or the bottom die layer each includes devices such as computing units, Analog-to-Digital converters, analog circuits, RF circuits, logic circuits, sensors, Input/Output devices, and/or memory devices. The devices on the first and the second die layers are laterally surrounded by, or adjacent, vertical interconnect structures (VIS).Type: GrantFiled: November 30, 2021Date of Patent: May 7, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tzu-Hsien Yang, Hiroki Noguchi, Hidehiro Fujiwara, Yih Wang
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Publication number: 20240145385Abstract: A memory device includes a plurality of memory cells disposed over a substrate and formed as an array that has a plurality of rows and a plurality of columns. Each of the plurality of memory cells includes a plurality of transistors. A first subset of the plurality of memory cells, that are disposed in first neighboring ones of the plurality of rows, are physically coupled to a corresponding one of a plurality of second interconnect structures that carries a supply voltage through a corresponding one of a plurality of first interconnect structures. The plurality of first interconnect structures extend along a first lateral direction in parallel with a lengthwise direction of a channel of each of the transistors of the memory cells, and the plurality of second interconnect structures, disposed above the plurality of first interconnect structures, extend along a second lateral direction perpendicular to the first lateral direction.Type: ApplicationFiled: February 16, 2023Publication date: May 2, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Hsin Nien, Hidehiro Fujiwara, Chih-Yu Lin, Yen-Huei Chen
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Patent number: 11961554Abstract: A device includes a first power rail for a first power domain and a second power rail for a second power domain. A first circuit block is connected to the first power rail and a second circuit block is connected to the second power rail. The first and second circuit blocks are both connected to a virtual VSS terminal. A footer circuit is connected between the virtual VSS terminal and a ground terminal, and the footer circuit is configured to selectively control a connection between the virtual VSS terminal and the ground terminal.Type: GrantFiled: December 11, 2020Date of Patent: April 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hidehiro Fujiwara, Kao-Cheng Lin, Wei Min Chan, Yen-Huei Chen
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Patent number: 11948627Abstract: A write assist circuit can include a control circuit and a voltage generator. The control circuit can be configured to receive memory address information associated with a memory write operation for memory cells. The voltage generator can be configured to provide a reference voltage to one or more bitlines coupled to the memory cells. The voltage generator can include two capacitive elements, where during the memory write operation, (i) one of the capacitive elements can be configured to couple the reference voltage to a first negative voltage, and (ii) based on the memory address information, both capacitive elements can be configured to cumulatively couple the reference voltage to a second negative voltage that is lower than the first negative voltage.Type: GrantFiled: August 9, 2022Date of Patent: April 2, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hidehiro Fujiwara, Chih-Yu Lin, Sahil Preet Singh, Hsien-Yu Pan, Yen-Huei Chen, Hung-Jen Liao
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Publication number: 20240105241Abstract: Disclosed herein are related to a memory device. In one aspect, a memory device includes a set of memory cells. In one aspect, the memory device includes a first bit line extending along a direction. The first bit line may be coupled to a subset of the set of memory cells disposed along the direction. In one aspect, the memory device includes a second bit line extending along the direction. In one aspect, the memory device includes a switch coupled between the first bit line and the second bit line.Type: ApplicationFiled: February 16, 2023Publication date: March 28, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Yu Lin, Yi-Hsin Nien, Hidehiro Fujiwara, Yen-Huei Chen
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Publication number: 20240094943Abstract: A circuit includes a data register configured to receive and output successive data elements of a plurality of data elements responsive to a clock signal, wherein each data element of the plurality of data elements includes a total number of bits N. A signal generation portion is configured to output a first selection signal responsive to the clock signal, the first selection signal includes two alternating sequences, values of the first sequence increment from zero to N?1, and values of the second sequence decrement from N?1 to zero. A selection circuit coupled to the data register is configured to output the N bits of each data element of the plurality of data elements in a first sequential order responsive to the first sequence of the first selection signal, and in a second sequential order opposite the first sequential order responsive to the second sequence of the first selection signal.Type: ApplicationFiled: November 30, 2023Publication date: March 21, 2024Inventors: Hidehiro FUJIWARA, Haruki MORI, Wei-Chang ZHAO
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Publication number: 20240096757Abstract: An integrated circuit (IC) die includes first through third adjacent rows of through-silicon vias (TSVs), and first and second adjacent rows of memory macros. TSVs of the first row of TSVs extend through and are electrically isolated from memory macros of the first row of memory macros. TSVs of the third row of TSVs extend through and are electrically isolated from memory macros of the second row of memory macros.Type: ApplicationFiled: November 30, 2023Publication date: March 21, 2024Inventors: Hidehiro FUJIWARA, Tze-Chiang HUANG, Hong-Chen CHENG, Yen-Huei CHEN, Hung-Jen LIAO, Jonathan Tsung-Yung CHANG, Yun-Han LEE, Lee-Chung LU
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Patent number: 11935586Abstract: A memory device has a memory array of a plurality of memory cells arranged in a plurality of columns and a plurality of rows. The memory cells in each of the plurality of columns include first memory cells and second memory cells alternately arranged along a column direction of the plurality of columns. A first computation circuit is coupled to the first memory cells in each of the plurality of columns, and is configured to generate first output data corresponding to a first computation performed on first weight data stored in the first memory cells. A second computation circuit is coupled to the second memory cells in each of the plurality of columns, and is configured to generate second output data corresponding to a second computation performed on second weight data stored in the second memory cells.Type: GrantFiled: February 11, 2022Date of Patent: March 19, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hidehiro Fujiwara, Haruki Mori, Wei-Chang Zhao
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Patent number: 11929116Abstract: A memory device and a method for operating the memory device are provided. The memory device includes a memory cell and a bit line connected to the memory cell. A negative voltage generator is connected to the bit line. The negative voltage generator, when enabled, is operative to provide a first write path for the bit line. A control circuit is connected to the negative voltage generator and the bit line. The control circuit is operative to provide a second write path for the bit line when the negative voltage generator is not enabled.Type: GrantFiled: January 23, 2023Date of Patent: March 12, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Hsin Nien, Hidehiro Fujiwara, Chih-Yu Lin, Yen-Huei Chen
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Publication number: 20240079052Abstract: A semiconductor device includes a first memory bank, a second memory bank and a first write driver. The first memory bank is coupled to a plurality of first data lines, and configured to operate according to a first data signal. The second memory bank is configured to operate according to the first data signal. The first write driver is disposed between the first memory bank and the second memory bank, and configured to adjust a voltage level of one of the plurality of first data lines when the first memory bank is written according to the first data signal.Type: ApplicationFiled: March 24, 2023Publication date: March 7, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Nikhil PURI, Venkateswara Reddy KONUDULA, Teja MASINA, Yen-Huei CHEN, Hung-Jen LIAO, Hidehiro FUJIWARA
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Patent number: 11908545Abstract: A memory device and an operating method for computing-in-memory (CIM) are provided. The memory device for CIM comprises a plurality of memory banks and a global multiply accumulate (MAC) circuit. Each of the memory banks comprises a first memory array, a first latch circuit, a second latch circuit and a local MAC circuit. The first latch circuit latches a first data from the first memory array in a first read cycle. The second latch circuit latches a second data from the first memory array in a second read cycle. The local MAC circuit performs a first stage CIM operation on a first latched data latched in the first latch circuit and the second latched data latched in the second latch circuit to provide a first stage CIM result. The global MAC circuit performs a second stage CIM operation on a plurality of first stage CIM results from the memory banks.Type: GrantFiled: February 24, 2022Date of Patent: February 20, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hidehiro Fujiwara, Haruki Mori, Wei-Chang Zhao
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Patent number: 11910587Abstract: An apparatus includes memory cells. A first memory cell of the memory cells includes a first write port laid out in a first doping region and a first read port laid out in a second doping region. The first read port is separated from the first write port by a second write port of a second memory cell of the memory cells.Type: GrantFiled: August 24, 2021Date of Patent: February 20, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hidehiro Fujiwara, Yi-Hsin Nien, Hung-Jen Liao
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Publication number: 20240046979Abstract: A semiconductor memory device includes: a local write bit (LWB) line; a local write bit_bar (LWB_bar) line; a global write bit (GWB) line; a global write bit_bar (GWBL_bar) line; a column of segments, each segment including bit cells; each of the bit cells being coupled correspondingly between the LWB and LWB_bar lines; and a distributed write driving arrangement including local write drivers correspondingly coupled to the segments; and a global write driver coupled to each of the local write drivers.Type: ApplicationFiled: October 6, 2023Publication date: February 8, 2024Inventors: Hidehiro FUJIWARA, Hung-Jen LIAO, Li-Wen WANG, Jonathan Tsung-Yung CHANG, Yen-Huei CHEN
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Publication number: 20240028254Abstract: A charge sharing scheme is used to mitigate the variations in cell currents in order to achieve higher accuracy for CIM computing. In some embodiments, a capacitor is associated with each SRAM cell, and the capacitors associated with all SRAM cells in a column are included in averaging the RBL current. In some embodiments, a memory unit associated to an RBL in a CIM device includes a storage element adapted to store a weight, a first switch device connected to the storage element and adapted to be controlled by an input signal and generate a product signal having a magnitude indicative of the product of the input signal and the stored weight. The memory unit further includes a capacitor adapted to receive the product signal and store an amount of charge corresponding to the magnitude of the product signal. The memory unit further include a second switch device adapted to transfer the charge on the capacitor to the RBL.Type: ApplicationFiled: July 31, 2023Publication date: January 25, 2024Inventors: Jonathan Tsung-Yung CHANG, Hidehiro FUJIWARA, Hung-Jen LIAO, Yen-Huei CHEN, Yih WANG, Haruki MORI
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Publication number: 20240021240Abstract: A memory array is disclosed. The memory array includes a plurality of memory cells disposed over a substrate. Each of the memory cells is coupled to a corresponding one of a plurality of word lines and a corresponding one of a plurality of bit line pairs. First four of the memory cells that are coupled to four consecutive ones of the word lines and to a first one of the bit line pairs are abutted to one another on the substrate along a single lateral direction.Type: ApplicationFiled: July 12, 2022Publication date: January 18, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Hsin Nien, Hidehiro Fujiwara, Chih-Yu Lin, Yen-Huei Chen
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Publication number: 20230418557Abstract: A circuit includes a multiplier circuit that receives a signed mantissa of each data element of pluralities of input and weight data elements and generates two's complement products by performing multiplication and reformatting operations on some or all of the input data element signed mantissas and some or all of the weight data element signed mantissas, a summing circuit that receives an exponent of each data element of the pluralities of input and weight data elements and generates sums by adding each input data element exponent to each weight data element exponent, a shifting circuit that shifts each product by an amount equal to a difference between a corresponding sum and a maximum sum, and an adder tree that generates a mantissa sum from the shifted products.Type: ApplicationFiled: January 20, 2023Publication date: December 28, 2023Inventors: Chia-Fu LEE, Cheng Han LU, Yu-Der CHIH, Jonathan Tsung-Yung CHANG, Yen-Huei CHEN, Chen-En LEE, Wei-Chang ZHAO, Haruki MORI, Hidehiro FUJIWARA
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Patent number: 11854943Abstract: An integrated circuit (IC) package includes a logic die, a substrate, a memory die positioned between the logic die and the substrate, and a power distribution structure configured to electrically couple the logic die to the substrate. The power distribution structure includes a plurality of conductive segments positioned between the logic die and the memory die, a plurality of bump structures positioned between the memory die and the substrate, and a plurality of through-silicon vias (TSVs) electrically coupled to the plurality of conductive segments and the plurality of bump structures, and a TSV of the plurality of TSVs extends through, and is electrically isolated from, a memory macro of the memory die.Type: GrantFiled: January 12, 2023Date of Patent: December 26, 2023Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC NANJING COMPANY, LIMITEDInventors: Hidehiro Fujiwara, Tze-Chiang Huang, Hong-Chen Cheng, Yen-Huei Chen, Hung-Jen Liao, Jonathan Tsung-Yung Chang, Yun-Han Lee, Lee-Chung Lu
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Patent number: 11853596Abstract: A circuit includes a data register configured to receive a signal including a plurality of data elements, a first selection circuit coupled to the data register, a counter, a second selection circuit coupled to the counter, and an inverter coupled between the counter and the second selection circuit. The data register outputs a plurality of bits of each data element to the first selection circuit, the counter and the inverter generate complementary signals in which sequential data elements have cyclical values that step in opposite directions, the second selection circuit alternatively outputs each of the complementary signals as a selection signal to the first selection circuit, and the first selection circuit, responsive to the selection signal, outputs the pluralities of bits of the data elements in alternating sequential orders.Type: GrantFiled: April 26, 2022Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hidehiro Fujiwara, Haruki Mori, Wei-Chang Zhao
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Publication number: 20230410851Abstract: Header circuitry for a memory device includes multiple backside power rails that form distinct voltage sources for a plurality of switching devices in the header circuitry. The header circuitry includes at least one region of a first conductivity type. A first section in the first region includes one backside power rail (BPR) that forms a first voltage source that provides a first voltage. A second section in the same first region includes another BPR that forms a second voltage source that provides a second voltage that is different from the first voltage.Type: ApplicationFiled: July 31, 2023Publication date: December 21, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Haruki MORI, Chien-Chi TIEN, Chia-En HUANG, Hidehiro FUJIWARA, Yen-Huei CHEN, Feng-Lun CHEN
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Publication number: 20230395143Abstract: A method of performing an in-memory computation includes storing a first subset of data in a first segment of a first memory array and a second subset of the data in a second segment of the first memory array, latching a first data bit from a first column of memory cells in the first segment of the first memory array, sequentially reading a plurality of second data bits from a second column of memory cells in the second segment of the first memory array, and performing a logic operation on each combination of the latched first data bit and each second data bit.Type: ApplicationFiled: August 10, 2023Publication date: December 7, 2023Inventors: Yen-Huei CHEN, Hidehiro FUJIWARA, Hung-Jen LIAO, Jonathan Tsung-Yung CHANG