Abstract: There are disclosed a resin composition comprising (A) a heat-resistant resin soluble in a solvent at room temperature, (B) a heat-resistant resin which is insoluble in a solvent at room temperature but becomes soluble by heating, and (C) a solvent; a heat-resistant resin paste further containing (D) particles or liquid state material D showing rubber elasticity; and a semiconductor device using the same and a method for producing the same.

Abstract: An adhesive film for semiconductor use of the present invention is used in a method in which, after the adhesive film for semiconductor use is laminated to one side of a metal sheet, the metal sheet is processed to give a wiring circuit, a semiconductor die is mounted and molded, and the adhesive film is then peeled off. The adhesive film includes a resin layer A formed on one side or both sides of a support film, the 90 degree peel strength between the resin layer A and the metal sheet prior to the processing of the metal sheet laminated with the adhesive film for semiconductor use to give the wiring circuit is 20 N/m or greater at 25° C., and the 90 degree peel strengths, after molding with a molding compound the wiring circuit laminated with the adhesive film for semiconductor use, between the resin layer A and the wiring circuit and between the resin layer A and the molding compound are both 1000 N/m or less at least one point in the temperature range of 0° C. to 250° C.

Abstract: An adhesive film for semiconductor, which comprises at least one resin layer, and, after bonded to a lead frame, has at 25° C. a 90°-peel strength of at least 5 N/m between the resin layer and the lead frame, and, after a lead frame is bonded to the adhesive film for semiconductor and sealed with a sealing material, has at least at one point of temperatures ranging from 0 to 250° C. a 90°-peel strength of at most 1000 N/m between the resin layer and each of the lead frame and the sealing material; a lead frame and a semiconductor device using the adhesive film for semiconductor; and a method of producing a semiconductor device.

Abstract: An adhesive film for semiconductor use of the present invention is used in a method in which, after the adhesive film for semiconductor use is laminated to one side of a metal sheet, the metal sheet is processed to give a wiring circuit, a semiconductor die is mounted and molded, and the adhesive film is then peeled off. The adhesive film includes a resin layer A formed on one side or both sides of a support film, the 90 degree peel strength between the resin layer A and the metal sheet prior to the processing of the metal sheet laminated with the adhesive film for semiconductor use to give the wiring circuit is 20 N/m or greater at 25° C., and the 90 degree peel strengths, after molding with a molding compound the wiring circuit laminated with the adhesive film for semiconductor use, between the resin layer A and the wiring circuit and between the resin layer A and the molding compound are both 1000 N/m or less at at least one point in the temperature range of 0° C. to 250° C.

Abstract: An adhesive film for semiconductor, which comprises at least one resin layer, and, after bonded to a lead frame, has at 25° C. a 90°-peel strength of at least 5 N/m between the resin layer and the lead frame, and, after a lead frame is bonded to the adhesive film for semiconductor and sealed with a sealing material, has at least at one point of temperatures ranging from 0 to 250° C. a 90°-peel strength of at most 1000 N/m between the resin layer and each of the lead frame and the sealing material; a lead frame and a semiconductor device using the adhesive film for semiconductor; and a method of producing a semiconductor device.

Abstract: An adhesive film for semiconductor, which comprises at least one resin layer, and, after bonded to a lead frame, has at 25° C. a 90°-peel strength of at least 5 N/m between the resin layer and the lead frame, and, after a lead frame is bonded to the adhesive film for semiconductor and sealed with a sealing material, has at least at one point of temperatures ranging from 0 to 250° C. a 90°-peel strength of at most 1000 N/m between the resin layer and each of the lead frame and the sealing material; a lead frame and a semiconductor device using the adhesive film for semiconductor; and a method of producing a semiconductor device.

Abstract: There are disclosed a resin composition comprising (A) a heat-resistant resin soluble in a solvent at room temperature, (B) a heat-resistant resin which is insoluble in a solvent at room temperature but becomes soluble by heating, and (C) a solvent; a heat-resistant resin paste further containing (D) particles or liquid state material D showing rubber elasticity; and a semiconductor device using the same and a method for producing the same.

Abstract: An adhesive film for semiconductor, which comprises at least one resin layer, and, after bonded to a lead frame, has at 25° C. a 90°-peel strength of at least 5 N/m between the resin layer and the lead frame, and, after a lead frame is bonded to the adhesive film for semiconductor and sealed with a sealing material, has at least at one point of temperatures ranging from 0 to 250° C. a 90°-peel strength of at most 1000 N/m between the resin layer and each of the lead frame and the sealing material; a lead frame and a semiconductor device using the adhesive film for semiconductor; and a method of producing a semiconductor device.

Abstract: There are disclosed a resin composition comprising (A) a heat-resistant resin soluble in a solvent at room temperature, (B) a heat-resistant resin which is insoluble in a solvent at room temperature but becomes soluble by heating, and (C) a solvent; a heat-resistant resin paste further containing (D) particles or liquid state material D showing rubber elasticity; and a semiconductor device using the same and a method for producing the same.

Abstract: An adhesive film for semiconductor, which comprises at least one resin layer, and, after bonded to a lead frame, has at 25° C. a 90°-peel strength of at least 5 N/m between the resin layer and the lead frame, and, after a lead frame is bonded to the adhesive film for semiconductor and sealed with a sealing material, has at least at one point of temperatures ranging from 0 to 250° C. a 90°-peel strength of at most 1000 N/m between the resin layer and each of the lead frame and the sealing material; a lead frame and a semiconductor device using the adhesive film for semiconductor; and a method of producing a semiconductor device.

Abstract: An adhesive film for semiconductor use of the present invention is used in a method in which, after the adhesive film for semiconductor use is laminated to one side of a metal sheet, the metal sheet is processed to give a wiring circuit, a semiconductor die is mounted and molded, and the adhesive film is then peeled off. The adhesive film includes a resin layer A formed on one side or both sides of a support film, the 90 degree peel strength between the resin layer A and the metal sheet prior to the processing of the metal sheet laminated with the adhesive film for semiconductor use to give the wiring circuit is 20 N/m or greater at 25° C., and the 90 degree peel strengths, after molding with a molding compound the wiring circuit laminated with the adhesive film for semiconductor use, between the resin layer A and the wiring circuit and between the resin layer A and the molding compound are both 1000 N/m or less at at least one point in the temperature range of 0° C. to 250° C.

Abstract: The present invention provides an adhesive film that combines low temperature adhesion with favorable wire bonding characteristics. The adhesive film used for bonding a semiconductor element to a target adherend comprises an adhesive layer formed on one surface, or both surfaces, of a heat resistant film, the adhesive layer comprises a resin A and a resin B, a glass transition temperature of the resin A is lower than a glass transition temperature of the resin B, and the adhesive layer has a sea-island structure, in which the resin A forms the sea, and the resin B forms the islands.

Abstract: There are disclosed a photosensitive resin composition comprising: at least one photosensitive resin among a polyamide resin (A) having a repeating unit (U1) represented by general formula (I) below and a polyamideimide resin (B) having a repeating unit (U2) represented by general formula (II); and at least one photopolymerizable compound among a silane coupling agent (C) having a photopolymerizable unsaturated bond and a photopolymerizable unsaturated monomer (D) comprising a monomer (d1) having at least 5 photopolymerizable unsaturated bonds per molecule General formula (I): (in the formula, X1 denotes a trivalent organic group having an aromatic ring, Y1 denotes a divalent organic group having an aromatic ring, and R1 denotes a monovalent organic group having a photosensitive group) General formula (II): (in the formula, X2 and Y2 denote trivalent organic groups having an aromatic ring, and R2 denotes a monovalent organic group having a photosensitive group), a pattern production process using s

Abstract: There are disclosed a photosensitive resin composition comprising:

Abstract: An adhesive film for semiconductor, which comprises at least one resin layer, and, after bonded to a lead frame, has at 25° C. a 90°-peel strength of at least 5 N/m between the resin layer and the lead frame, and, after a lead frame is bonded to the adhesive film for semiconductor and sealed with a sealing material, has at least at one point of temperatures ranging from 0 to 250° C a 90°-peel strength of at most 1000 N/m between the resin layer and each of the lead frame and the sealing material; a lead frame and a semiconductor device using the adhesive film for semiconductor; and a method of producing a semiconductor device.

Abstract: An adhesive film for semiconductor comprises a support film, and adhesive layers formed on both surfaces of the support film, in which each adhesive layer comprises an adhesive having a glass transition temperature of 200° C. or less, a coefficient of linear expansion of 70 ppm or less, and a storage elastic modulus of 3 GPa or less, and the adhesive film has a total thickness of between 43 and 57 &mgr;m. A lead frame for semiconductor comprises a lead frame and an adhesive film for semiconductor according to the present invention. A semiconductor device comprises a lead frame and a semiconductor element, in which the lead frame and the semiconductor element are adhered to each other via an adhesive film for semiconductor according to the present invention.

Abstract: An adhesive film for semiconductor, which has a three-layer structure consisting of a support film having each face coated with an adhesive layer, each adhesive layer containing (A) a heat resistant thermoplastic resin having a glass transition temperature of 130 to 300° C., a water absorption of 3% by weight or less and a squeeze length of 2 mm or less, (B) an epoxy resin and (C) a trisphenol compound as an epoxy resin-curing agent; a lead frame with adhesive film; and a semiconductor device wherein the lead frame with adhesive film is bonded to a semiconductor element.

Abstract: An adhesive film for semiconductor, which comprises at least one resin layer, and, after bonded to a lead frame, has at 25° C. a 90°-peel strength of at least 5 N/m between the resin layer and the lead frame, and, after a lead frame is bonded to the adhesive film for semiconductor and sealed with a sealing material, has at least at one point of temperatures ranging from 0 to 250° C. a 90°-peel strength of at most 1000 N/m between the resin layer and each of the lead frame and the sealing material; a lead frame and a semiconductor device using the adhesive film for semiconductor; and a method of producing a semiconductor device.

Abstract: An adhesive film for semiconductor comprises a support film, and adhesive layers formed on both surfaces of the support film, in which each adhesive layer comprises an adhesive having a glass transition temperature of 200° C. or less, a coefficient of linear expansion of 70 ppm or less, and a storage elastic modulus of 3 GPa or less, and the adhesive film has a total thickness of between 43 and 57 &mgr;m. A lead frame for semiconductor comprises a lead frame and an adhesive film for semiconductor according to the present invention. A semiconductor device comprises a lead frame and a semiconductor element, in which the lead frame and the semiconductor element are adhered to each other via an adhesive film for semiconductor according to the present invention.

Abstract: Disclosed is a composite film, a method of producing a lead frame with the composite film attached, and a method of bonding a semiconductor chip to this lead frame having the composite film attached. The composite film includes a base film and an adhesive layer on one or both sides of the base film. The composite film has a thickness of T (&mgr;m), the base film has an edge tearing strength of R (kg/20 mm), the adhesive layer has a total thickness of A, and the base film has a thickness of B, T being related to R by a numerical formula R>0.6T-8 when T≦60, or by a numerical formula R≧28 when T>60, and A/B being 0.5 to 1.4.