Abstract: A semiconductor device includes a first transistor, a first drive circuit including a second transistor, and a second drive circuit including a third transistor. The second transistor and the third transistor are connected in series; and a connection node of the second and third transistors is connected to a gate electrode of the first transistor. The first transistor, the second transistor, and the third transistor are normally-off MOS HEMTs formed in a first substrate that includes GaN. The first drive circuit charges a parasitic capacitance of the first transistor. The second drive circuit discharges the parasitic capacitance of the first transistor.

Abstract: The invention provides a metal bellows type accumulator having an outer shell provided in its one end with a pressure introducing passage in an opening manner, and a metal bellows repeatedly formed peak portions directed to an outer side in a radial direction and trough portions directed to an inner side, capable of expanding and contracting in an axial direction and separating an inner chamber of the outer shell into a pressure introducing chamber communicated with the pressure introducing passage and a gas chamber charged with cushion gas. A tubular portion is provided at a position where an amplitude of vibration in a radial direction becomes maximum in the metal bellows, has a greater diameter than a maximum diameter portion of each of the peak portions and is in contactable with an inner peripheral surface of the outer shell at a predetermined width in the axial direction.

Abstract: The invention provides a metal bellows type accumulator having an outer shell provided in its one end with a pressure introducing passage in an opening manner, and a metal bellows repeatedly formed peak portions directed to an outer side in a radial direction and trough portions directed to an inner side, capable of expanding and contracting in an axial direction and separating an inner chamber of the outer shell into a pressure introducing chamber communicated with the pressure introducing passage and a gas chamber charged with cushion gas. A tubular portion is provided at a position where an amplitude of vibration in a radial direction becomes maximum in the metal bellows, has a greater diameter than a maximum diameter portion of each of the peak portions and is in contactable with an inner peripheral surface of the outer shell at a predetermined width in the axial direction.

Abstract: The invention provides a display device that allows formation of the boundary of exposure at an arbitrary position on its substrate. A display device includes: a display area; a terminal; and a wire formed between the display area and the terminal and connected to the terminal. The wire includes a first part, a second part, and a third part. The first part extends in a first direction. The second part and the third part extend in a direction different from the first direction. The first part is located between the second and third parts and includes a protruding portion protruding in a second direction perpendicular to the first direction.

Abstract: A manufacturing method of a display device having an array substrate includes the steps of forming a projection of an organic material in a pixel on the array substrate by patterning a photosensitive material or by inkjet, forming a TFT on the array substrate, wherein a source electrode of the TFT is formed to extend on at least part of the upper surface of the projection, forming an inorganic passivation layer over the TFT and over at least part of the upper surface of the projection, forming an organic passivation layer over the inorganic passivation layer, forming an upper insulating layer over at least part of the organic passivation layer, forming a contact hole in the inorganic passivation layer and the upper insulation layer over the upper surface of the projection, and forming a pixel electrode on the upper insulation layer which contacts the source electrode.

Abstract: A manufacturing method of a display device having an array substrate includes the steps of forming a projection of an organic material in a pixel on the array substrate by patterning a photosensitive material or by inkjet, forming a TFT on the array substrate, wherein a source electrode of the TFT is formed to extend on at least part of the upper surface of the projection, forming an inorganic passivation layer over the TFT and over at least part of the upper surface of the projection, forming an organic passivation layer over the inorganic passivation layer, forming an upper insulating layer over at least part of the organic passivation layer, forming a contact hole in the inorganic passivation layer and the upper insulation layer over the upper surface of the projection, and forming a pixel electrode on the upper insulation layer which contacts the source electrode.

Abstract: A manufacturing method of a display device having an array substrate includes the steps of forming a projection of an organic material in a pixel on the array substrate by patterning a photosensitive material or by inkjet, forming a TFT on the array substrate, wherein a source electrode of the TFT is formed to extend on at least part of the upper surface of the projection, forming an inorganic passivation layer over the TFT and over at least part of the upper surface of the projection, forming an organic passivation layer over the inorganic passivation layer, forming an upper insulating layer over at least part of the organic passivation layer, forming a contact hole in the inorganic passivation layer and the upper insulation layer over the upper surface of the projection, and forming a pixel electrode on the upper insulation layer which contacts the source electrode.

Abstract: Screen brightness is improved in an IPS type liquid crystal display device. A common electrode having a slit is disposed over a rectangular pixel electrode with an insulating film attached therebetween. The slit has a linear part and a bend part. The bend part is necessary for preventing pressing domain. The transmittance in the bend part is increased by making the thickness of the insulating film below the bend part of the slit to less than the thickness of the insulating film at the linear part of the slit, thereby increasing the transmittance of the entire pixel. Thus, the screen brightness can be improved.

Abstract: A manufacturing method of a display device having an array substrate includes the steps of forming a projection of an organic material in a pixel on the array substrate by patterning a photosensitive material or by inkjet, forming a TFT on the array substrate, wherein a source electrode of the TFT is formed to extend on at least part of the upper surface of the projection, forming an inorganic passivation layer over the TFT and over at least part of the upper surface of the projection, forming an organic passivation layer over the inorganic passivation layer, forming an upper insulating layer over at least part of the organic passivation layer, forming a contact hole in the inorganic passivation layer and the upper insulation layer over the upper surface of the projection, and forming a pixel electrode on the upper insulation layer which contacts the source electrode.

Abstract: A PTFE resin seal ring in which at least one surface of an abutting part that forms a discontinuous part of the seal ring is treated by plasma modification using non-polymerizable gas under pressure conditions of 10 to 500 Pa during plasma irradiation. Since the abutting surfaces of the PTFE resin seal ring are treated with low-pressure plasma, and the state of CF bonds in the surface portion is changed, sticking does not occur in the abutting part even after constant load is applied at a high temperature. Thus, the PTFE resin seal ring of the present invention exhibits excellent effects of ensuring sealing properties under pressure and slidability under ordinary pressure, and is effectively used as a sealing material in, for example, rotation or reciprocation, including hydraulic circuits such as automatic transmissions (A/T) and continuously variable transmissions (CVT) for vehicles.

Abstract: A PTFE resin seal ring in which an amorphous carbon film is formed on at least one surface of an abutting part that forms a discontinuous part of the seal ring. Since an amorphous carbon film is formed on the abutting surfaces of the PTFE resin seal ring, sticking does not occur in the abutting part even after constant load is applied at a high temperature. Thus, the PTFE resin seal ring of the present invention exhibits excellent effects of ensuring sealing properties under pressure and slidability under ordinary pressure, and is effectively used as sealing material in, for example, rotation or reciprocation, including hydraulic circuits such as automatic transmissions (A/T) and continuously variable transmissions (CVT) for vehicles.

Abstract: A manufacturing method of a display device having an array substrate includes the steps of forming a projection of an organic material in a pixel on the array substrate by patterning a photosensitive material or by inkjet, forming a TFT on the array substrate, wherein a source electrode of the TFT is formed to extend on at least part of the upper surface of the projection, forming an inorganic passivation layer over the TFT and over at least part of the upper surface of the projection, forming an organic passivation layer over the inorganic passivation layer, forming an upper insulating layer over at least part of the organic passivation layer, forming a contact hole in the inorganic passivation layer and the upper insulation layer over the upper surface of the projection, and forming a pixel electrode on the upper insulation layer which contacts the source electrode.

Abstract: In order to improve the transmissivity of each pixel and the brightness of a high-definition screen, a TFT and a projection are disposed in each pixel, a source electrode of the TFT extends so as to cover the projection, an inorganic passivation film is formed over the TFT and the projection, an organic passivation film is formed on the inorganic passivation film on the TFT, an opposed electrode is formed on the organic passivation film, an upper insulation film is formed over the opposed electrode, a pixel electrode is formed on the upper insulation film, and the pixel electrode is connected to the source electrode through a connection hole formed in the inorganic passivation film and the upper insulation film on the projection. Accordingly, the diameter of a through-hole can be made smaller.

Abstract: Screen brightness is improved in an IPS type liquid crystal display device. A common electrode having a slit is disposed over a rectangular pixel electrode with an insulating film attached therebetween. The slit has a linear part and a bend part. The bend part is necessary for preventing pressing domain. The transmittance in the bend part is increased by making the thickness of the insulating film below the bend part of the slit to less than the thickness of the insulating film at the linear part of the slit, thereby increasing the transmittance of the entire pixel. Thus, the screen brightness can be improved.

Abstract: In order to improve the transmissivity of each pixel and the brightness of a high-definition screen, a TFT and a projection are disposed in each pixel, a source electrode of the TFT extends so as to cover the projection, an inorganic passivation film is formed over the TFT and the projection, an organic passivation film is formed on the inorganic passivation film on the TFT, an opposed electrode is formed on the organic passivation film, an upper insulation film is formed over the opposed electrode, a pixel electrode is formed on the upper insulation film, and the pixel electrode is connected to the source electrode through a connection hole formed in the inorganic passivation film and the upper insulation film on the projection. Accordingly, the diameter of a through-hole can be made smaller.

Abstract: A liquid crystal display device is provided with a pair of substrates which are arranged to face each other in an opposed manner and a liquid crystal layer which is sandwiched between main surfaces of a pair of substrates. On the main surface of one of the pair of substrates which faces the liquid crystal layer, pixel regions including switching elements, pixel electrodes which are connected to the switching elements and a protective film which is disposed at liquid crystal layer side of the switching elements are formed. In such a liquid crystal device, the protective film is formed by laminating the plurality of material layers which include at least a first material layer and a second material layer which is arranged closer to the liquid crystal layer side than the first material layer.

Abstract: A liquid crystal display device is provided with a pair of substrates which are arranged to face each other in an opposed manner and a liquid crystal layer which is sandwiched between main surfaces of a pair of substrates. On the main surface of one of the pair of substrates which faces the liquid crystal layer, pixel regions including switching elements, pixel electrodes which are connected to the switching elements and a protective film which is disposed at liquid crystal layer side of the switching elements are formed. In such a liquid crystal device, the protective film is formed by laminating the plurality of material layers which include at least a first material layer and a second material layer which is arranged closer to the liquid crystal layer side than the first material layer.

Abstract: In a liquid crystal display device having a thin film transistor in a pixel region thereof, the present invention arranges a semiconductor layer being located under a source electrode in the thin film transistor within a contour of a gate line (or a gate electrode of the thin film transistor) so as to suppress a photo conductive current in the semiconductor layer, or to prevent the source electrode from being broken at a position where the source electrode gets over the semiconductor layer.

Abstract: A liquid crystal display device is provided with a pair of substrates which are arranged to face each other in an opposed manner and a liquid crystal layer which is sandwiched between main surfaces of a pair of substrates. On the main surface of one of the pair of substrates which faces the liquid crystal layer, pixel regions including switching elements, pixel electrodes which are connected to the switching elements and a protective film which is disposed at liquid crystal layer side of the switching elements are formed. In such a liquid crystal device, the protective film is formed by laminating the plurality of material layers which include at least a first material layer and a second material layer which is arranged closer to the liquid crystal layer side than the first material layer.

Abstract: In a liquid crystal display device having a thin film transistor in a pixel region thereof, the present invention arranges a semiconductor layer being located under a source electrode in the thin film transistor within a contour of a gate line (or a gate electrode of the thin film transistor) so as to suppress a photo conductive current in the semiconductor layer, or to prevent the source electrode from being broken at a position where the source electrode gets over the semiconductor layer.