Abstract: A hybrid compressor includes a first compression mechanism, which is driven by a first drive source, a second compression mechanism, which is driven by a second drive source, and a communication path communicating between a suction chamber of the first compression mechanism and a suction chamber of the second compression mechanism. The first compression mechanism may be adapted only to be driven by the first drive source and the second compression mechanism may be adapted only to be driven the second drive source. Therefore, the compression mechanisms are adapted to their respective drive sources.

Abstract: A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm % of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.

Abstract: A heating element CVD system wherein one or a plurality of connection terminal holders is placed in the processing container, and each of the connection terminal holders holds a plurality of connection terminals. Each of the connection terminals connects the heating element to the electric power supply mechanism electrically such that a connection region of the heating element connected to the connection terminal is not exposed to a space in the processing container.

Abstract: A difficulty has been given, that is, in a condition that an electrostatic chuck having an oxide layer as a dielectric layer is set in catalytic chemical vapor deposition apparatus, as a silicon thin film is repeatedly deposited on a workpiece held by the electrostatic chuck, adsorbing power of the electrostatic chuck is gradually decreased, and finally the chuck does not adsorb a substrate at all. Thus, a dielectric layer on a surface of the electrostatic chuck is covered with an insulating film containing silicon nitride or silicon oxide. Thus, since damage to a chuck surface can be prevented, the damage being due to hydrogen radicals generated during depositing the silicon film by the catalytic chemical vapor deposition apparatus, even if the silicon film is repeatedly deposited, power for adsorbing the substrate is not decreased, and consequently substrate temperature is stabilized during depositing the silicon film.

Abstract: A gas phase reaction processing device 25 comprising a processing chamber 14 into which reactive gas is introduced, substrate material 3 to be processed which is disposed within the processing chamber 14, a catalytic body 9 for decomposing the reactive gas introduced into the processing chamber 14, an electric power unit 10 for supplying power to the catalytic body 9, and an electrode structure 15 containing the catalytic body 9, the gas phase reaction processing device being characterized in that the electrode structure 15 is provided with a plurality of catalytic bodies 9 which are arranged substantially parallel with one another, a first group of terminals 7 and a second group of terminals 8 which are disposed opposite to sandwich this catalytic body 9 therebetween, wherein the first group of terminals 7 supports one end of the catalytic body 9 and the second group of terminals 8 supports the other end of the catalytic body 9 respectively, and a terminal block 6 adapted to support and electrically insulate

Abstract: A digital zoom apparatus includes an SDRAM. The SDRAM is stored with YUV data so that horizontal 4 pixels are assigned to each of addresses. A zoom start pixel is specified by a CPU on the basis of a zoom magnification. A memory control circuit transfers two lines of YUV data to a line memory with reference to an address to which the zoom start pixel is assigned, and furthermore, transfers part of the YUV data to a register. The line memory and the register are stored with the YUV data so that one pixel is assigned to each of addresses. The YUV data held in the register is subject to a zoom process with reference to the zoom start pixel, whereby, a through image subjected to an enlargement zooming process is displayed on a display.

Abstract: There is provided a method for selectively transferring pixel control devices onto a planar display substrate, which method enables prepared pixel control devices to be easily, reliably and inexpensively mounted without inducing any loss of pixel control devices. The pixel control devices (1) are formed in a large number at pitches (5, 6) obtained respectively by dividing pitches (105, 106) on the planar display substrate (100) by natural numbers. The pixel control devices corresponding to the number of the pitches (105, 106) on the planar display substrate (100) are picked up, retained on a transparent thermoplastic resin film (101) formed on the planar display substrate (100) utilizing the plastic deformation of the film and fixed at the peripheries thereof with a transparent ultraviolet curing resin film (104).

Abstract: Conventional methods of crystallizing a semiconductor film through scanning with a pulse laser have had a problem in that variation in particle diameter or shape of a crystal grain causes variation in characteristics of a thin film transistor, which lowers display quality of a liquid crystal display. In view of this, in a method of crystallizing a semiconductor film according to the present invention, after a step of performing scanning with a first pulse laser, scanning with a second pulse laser, which has a higher energy density than that of the first pulse laser, is performed in a substantially orthogonal direction to a traveling direction of scanning with the first pulse laser. With this method, the semiconductor film can be crystallized uniformly.

Abstract: A digital still camera includes a DRAM so that the DRAM is stored with pixel data having a Y, U or V component. A memory control circuit reads the pixel data out of the DRAM at a clock rate of 30 MHz, and writes it to SRAM. The memory control circuit then reads out the pixel data, that has been written from the SRAM to a first register, at a clock rate of 15 MHz and at a desired zoom magnification. An H/V interpolating circuit performs vertical interpolation and horizontal interpolation based on the data read out, and creates a zoom pixel. Since two pixels in a vertical direction is required to create one zoom pixel, the SRAM is formed with 2 lines of a memory area. Also, since only 1 line of data can read out of the DRAM at one time, the memory control circuit reads out the pixel data at a clock rate 2 times the value 15 MHz, i.e. 30 MHz.

Abstract: This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 1012 eV −1cm−2 or less, which is brought by the above pre-treatment in the insulator film deposition process.

Abstract: A heating element CVD system wherein one or a plurality of connection terminal holders is placed in the processing container, and each of the connection terminal holders holds a plurality of connection terminals. Each of the connection terminals connects the heating element to the electric power supply mechanism electrically such that a connection region of the heating element connected to the connection terminal is not exposed to a space in the processing container.

Abstract: An integrated data detecting circuit 14 integrates digital data for each of detecting blocks set within a movement detecting area. A tripod-head control circuit 16 detects a correlation value for this integrated data to previously-registered integrated data, and compares the correlation value with a threshold to determine a first detecting block corresponding to an object. The tripod-head control circuit 16 further determines a first detecting area including the most first detecting blocks among a plurality of detecting areas set in the movement detecting area, and supplies to a drive device 18 a tripod-head control signal corresponding to the position. Accordingly, the drive device 18 controls a tripod head 20 such that a camera 12 is shifted in position to a direction of the first detecting area. Since determination is made for a first detecting area including the most first detecting blocks, the camera can be stabilized when an object is moving finely.

Abstract: A semiconductor thin film including a well layer is laminated on a semiconductor substrate, the semiconductor substrate and the semiconductor thin film is cleaved, and a cleavage plane of the semiconductor substrate and the semiconductor thin film, which is obtained by the cleaving, is exposed to an atmosphere produced by decomposition of a gas containing N-atoms under the presence of a heated catalytic substance, thereby a surface layer of the cleavage plane is removed and a nitride layer is formed on the surface. Subsequently, a dielectric film is formed on the cleavage plane. According to the above technique, a natural oxide film formed on the cleavage plane can be removed and also a protective film can be formed by using a catalytic CVD apparatus.

Abstract: A hybrid compressor includes a first compression mechanism, which is driven by a first drive source, a second compression mechanism, which is driven by a second drive source, and a communication path communicating between a suction chamber of the first compression mechanism and a suction chamber of the second compression mechanism. The first compression mechanism may be adapted only to be driven by the first drive source and the second compression mechanism may be adapted only to be driven the second drive source. Therefore, the compression mechanisms are adapted to their respective drive sources.

Abstract: A heating element CVD device capable of providing a high productivity and decomposing and/or activating the material gas led into a processing container by a heating element and stacking film on a substrate disposed in the processing container, wherein the connection part area of the heating element to a connection terminal for connecting the hearing element to a power supply mechanism is not exposed to a space inside the processing container, specifically, the connection part area is covered by a cylindrical body or a platy body covering the connection part area while providing a space part thereof from the hearing element, or the connection part area allows the space part to be present in a space thereof from the connection terminal and is covered by the cylindrical body or platy body covering the connection part area while providing the space part in a space thereof from the heating element, and hydrogen gas is led from the connection terminal side into the processing container through the space part, wher

Abstract: A heating element CVD device capable of providing a high productivity and decomposing and/or activating the material gas led into a processing container by a heating element and stacking film on a substrate disposed in the processing container, wherein the connection part area of the heating element to a connection terminal for connecting the hearing element to a power supply mechanism is not exposed to a space inside the processing container, specifically, the connection part area is covered by a cylindrical body or a platy body covering the connection part area while providing a space part thereof from the hearing element, or the connection part area allows the space part to be present in a space thereof from the connection terminal and is covered by the cylindrical body or platy body covering the connection part area while providing the space part in a space thereof from the heating element, and hydrogen gas is led from the connection terminal side into the processing container through the space part, wher

Abstract: A semiconductor thin film including a well layer is laminated on a semiconductor substrate, the semiconductor substrate and the semiconductor thin film is cleaved, and a cleavage plane of the semiconductor substrate and the semiconductor thin film, which is obtained by the cleaving, is exposed to an atmosphere produced by decomposition of a gas containing N-atoms under the presence of a heated catalytic substance, thereby a surface layer of the cleavage plane is removed and a nitride layer is formed on the surface. Subsequently, a dielectric film is formed on the cleavage plane.

Abstract: A digital zoom apparatus includes an SDRAM. The SDRAM is stored with YUV data so that horizontal 4 pixels are assigned to each of addresses. A zoom start pixel is specified by a CPU on the basis of a zoom magnification. A memory control circuit transfers two lines of YUV data to a line memory with reference to an address to which the zoom start pixel is assigned, and furthermore, transfers part of the YUV data to a register. The line memory and the register are stored with the YUV data so that one pixel is assigned to each of addresses. The YUV data held in the register is subject to a zoom process with reference to the zoom start pixel, whereby, a through image subjected to an enlargement zooming process is displayed on a display.

Abstract: This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 1012 eV −1cm−2 or less, which is brought by the above pre-treatment in the insulator film deposition process.

Abstract: This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 1012 eV−1 cm−2 or less, which is brought by the above pre-treatment in the insulator film deposition process.