Abstract: This invention provides a viscosity modifier for high concentration dispersion of inorganic fine particles which can reduce, by giving excellent viscosity modifying function to a high concentration dispersion of inorganic fine particles (e.g., printing ink composition, functional paste composition or paint composition, of high concentration dispersion of inorganic fine particles), the occurrence of inconvenience in a printing step or coating step for the manufacture of components or substrates, and also provides a high concentration dispersion of inorganic fine particles which contains said viscosity modifier.

Abstract: According to one embodiment, there is provided a nonaqueous electrolyte secondary battery including a positive electrode, a negative electrode containing a titanium-containing oxide, and a nonaqueous electrolyte. The nonaqueous electrolyte contains carbon monoxide and at least one selected from difluorophosphoric acid and monofluorophosphoric acid. The ratio of the mass concentration of carbon monoxide to the sum of the mass concentrations of difluorophosphoric acid and monofluorophosphoric acid is in the range of 0.1 to 5%.

Abstract: A non-aqueous electrolyte secondary battery of an embodiment includes an exterior member, a negative electrode containing a titanium-containing oxide housed in the exterior member, a positive electrode housed in the exterior member, a separator housed in the exterior member and arranged between the positive electrode and the negative electrode, and a non-aqueous electrolyte solution housed in the exterior member. At least one type or more chain carbonates are contained in a solvent of the non-aqueous electrolyte solution. A self-diffusion coefficient of the chain carbonate in ?20° C. is front 1.4×10?10 to 2.0×10?10 m/sec.

Abstract: A non-aqueous electrolyte secondary battery includes a positive electrode containing active material particles composed of a core section formed of olivine type LiFePO4; an intermediate section that lies on the outer side of the core section and has LiFexPyOz; and a surface section that lies on the outer side of the intermediate section and has LiFeaPbOc; and a negative electrode containing lithium titanate, in which battery the molar concentration ratio of Fe relative to P at the core section is greater than the average of x/y of LiFexPyOz, the average value of a/b of LiFeaPbOc at the surface section of the positive electrode active material particles is smaller than the average of x/y of LiFexPyOz, and the positive electrode active material particles include a region in which x/y of LiFexPyOz at the intermediate section increases continuously or intermittently in the direction from the surface section toward the core section.

Abstract: According to one embodiment, there is provided a non-aqueous electrolyte secondary battery including a positive electrode including a positive electrode active material layer, a negative electrode including a negative electrode active material layer, and a non-aqueous electrolyte. At least one of the positive electrode active material layer and the negative electrode active material layer contains carbon dioxide and releases the carbon dioxide in the range of 0.1 ml to 10 ml per 1 g when heated at 350° C. for 1 minute.

Abstract: According to one embodiment, there is provided a nonaqueous electrolyte battery. The nonaqueous electrolyte battery includes a positive electrode, a negative electrode and a nonaqueous electrolyte. The negative electrode includes a negative electrode material layer. The negative electrode material layer includes a negative electrode active material capable of absorbing and releasing lithium at a potential of 0.78 V (vs. Li/Li+) or more. A film containing a compound having a propylene glycol backbone is formed on at least a part of a surface of the negative electrode material layer. A content of the compound having the propylene glycol backbone in the film is 2 ?mol to 40 ?mol per g of a weight of the negative electrode material layer.

Abstract: This invention provides a viscosity modifier for high concentration dispersion of inorganic fine particles which can reduce, by giving excellent viscosity modifying function to a high concentration dispersion of inorganic fine particles (e.g., printing ink composition, functional paste composition or paint composition, of high concentration dispersion of inorganic fine particles), the occurrence of inconvenience in a printing step or coating step for the manufacture of components or substrates, and also provides a high concentration dispersion of inorganic fine particles which contains said viscosity modifier.

Abstract: A non-aqueous electrolyte secondary battery includes a positive electrode containing active material particles composed of a core section formed of olivine type LiFePO4; an intermediate section that lies on the outer side of the core section and has LiFexPyOz; and a surface section that lies on the outer side of the intermediate section and has LiFeaPbOc; and a negative electrode containing lithium titanate, in which battery the molar concentration ratio of Fe relative to P at the core section is greater than the average of x/y of LiFexPyOz, the average value of a/b of LiFeaPbOc at the surface section of the positive electrode active material particles is smaller than the average of x/y of LiFexPyOz, and the positive electrode active material particles include a region in which x/y of LiFexPyOz at the intermediate section increases continuously or intermittently in the direction from the surface section toward the core section.

Abstract: According to one embodiment, there is provided a nonaqueous electrolyte secondary battery including a positive electrode, a negative electrode containing a titanium-containing oxide, and a nonaqueous electrolyte. The nonaqueous electrolyte contains carbon monoxide and at least one selected from difluorophosphoric acid and monofluorophosphoric acid. The ratio of the mass concentration of carbon monoxide to the sum of the mass concentrations of difluorophosphoric acid and monofluorophosphoric acid is in the range of 0.1 to 5%.

Abstract: According to one embodiment, there is provided an electrode for battery which includes a current collector and an active material layer provided on the current collector. The active material layer contains particles of a lithium titanate compound having a spinel structure and a basic polymer. Here, the basic polymer is coating at least a part of the surface of the particles of the lithium titanate compound.

Abstract: According to one embodiment, there is provided a non-aqueous electrolyte secondary battery including a positive electrode, a negative electrode including a negative electrode active material layer, and a non-aqueous electrolyte. The negative electrode active material layer contains carbon dioxide and releases the carbon dioxide in the range of 0.1 ml to 5 ml per 1 g when heated at 200° C. for 1 minute.

Abstract: According to one embodiment, there is provided a non-aqueous electrolyte secondary battery including a positive electrode including a positive electrode active material layer, a negative electrode including a negative electrode active material layer, and a non-aqueous electrolyte. At least one of the positive electrode active material layer and the negative electrode active material layer contains carbon dioxide and releases the carbon dioxide in the range of 0.1 ml to 10 ml per 1 g when heated at 350° C. for 1 minute.

Abstract: An electronic device including a semiconductor layer having silicon as a major component; and a dielectric film epitaxially grown directly on a major surface of the semiconductor layer, wherein the dielectric film consists of a dielectric material having a Ruddlesden-Popper type structure, the Ruddlesden-Popper type structure is expressed by a chemical formula An+1BnO3n+1, the element A including at least one selected from a group consisting of Ba, Sr, Ca and Mg, a percentage of Mg content in the element A is not larger than 10%, and the element B includes at least one selected from a group consisting of Ti, Zr and Hf.

Abstract: There is provided a field effect transistor including: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed through the gate insulating film on at least the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.

Abstract: An electronic device including a semiconductor layer containing silicon as a major component; and a dielectric film epitaxially grown directly on a major surface of the semiconductor layer, a difference between 21/2 times lattice constant of the dielectric film along the major plane and a lattice constant of the semiconductor layer along the major plane being not larger than 1.5%, wherein the dielectric film includes a dielectric material having a well layer, the well layer is expressed by a chemical formula mAO+nABO3 where a layer of a sodium chloride structure expressed by a chemical formula AO and a layer of a perovskite structure expressed by a chemical formula ABO3 are stacked.

Abstract: An electronic device including a semiconductor layer having silicon as a major component; and a dielectric film epitaxially grown directly on a major surface of the semiconductor layer, wherein the dielectric film consists of a dielectric material having a Ruddlesden-Popper type structure, the Ruddlesden-Popper type structure is expressed by a chemical formula An+1BnO3n+1, the element A including at least one selected from a group consisting of Ba, Sr, Ca and Mg, a percentage of Mg content in the element A is not larger than 10%, and the element B includes at least one selected from a group consisting of Ti, Zr and Hf.

Abstract: An insulating film comprising: a first barrier layer; a well layer provided; and a second barrier layer is proposed. The first barrier layer consists of a material having a first bandgap and a first relative permittivity. The well layer is provided on the first barrier layer, and consists of a material having a second bandgap smaller than the first bandgap and having a second relative permittivity larger than first relative permittivity. Discrete energy levels are formed in the well layer by a quantum effect. The second barrier layer is provided on the well layer, and consists of a material having a third bandgap larger than the second bandgap and having a third relative permittivity smaller than second relative permittivity.

Abstract: An insulating film comprising: a first barrier layer; a well layer provided; and a second barrier layer is proposed. The first barrier layer consists of a material having a first bandgap and a first relative permittivity. The well layer is provided on the first barrier layer, and consists of a material having a second bandgap smaller than the first bandgap and having a second relative permittivity larger than first relative permittivity. Discrete energy levels are formed in the well layer by a quantum effect. The second barrier layer is provided on the well layer, and consists of a material having a third bandgap larger than the second bandgap and having a third relative permittivity smaller than second relative permittivity.

Abstract: An insulating film comprising: a first barrier layer; a well layer provided; and a second barrier layer is proposed. The first barrier layer consists of a material having a first bandgap and a first relative permittivity. The well layer is provided on the first barrier layer, and consists of a material having a second bandgap smaller than the first bandgap and having a second relative permittivity larger than first relative permittivity. Discrete energy levels are formed in the well layer by a quantum effect. The second barrier layer is provided on the well layer, and consists of a material having a third bandgap larger than the second bandgap and having a third relative permittivity smaller than second relative permittivity.

Abstract: A method of manufacturing an MIS semiconductor device includes forming a high dielectric film as a gate insulator on a semiconductor substrate of a first conductivity type, heat-treating the semiconductor substrate in ambient with hydrogen and oxygen gases to form an interface layer between the semiconductor substrate and the high dielectric film, forming a conductive film on the high dielectric film after the interfacial layer is formed, processing the conductive film in a gate pattern to form a gate electrode, and doping the semiconductor substrate with impurities of a second conductivity type using the gate electrode as a mask to form source/drain regions.