Abstract: A gamma ray detector is a detector detecting gamma rays and includes a photomultiplier tube having an entrance window and a photoelectric surface. The entrance window is a Cherenkov radiator. The photoelectric surface is formed on a vacuum side of the entrance window via an intermediate layer. The thickness of the intermediate layer is equal to or less than the wavelength of Cherenkov light emitted by an interaction of the gamma rays with the entrance window.

Abstract: A high-energy ray detector includes a detection unit in a vacuum container. The detection unit includes a first electron multiplier, a second electron multiplier, and an electron collector. Each of the first electron multiplier and the second electron multiplier has one or more MCPs each configured to emit electrons by interaction with an incident high-energy ray (?-ray, X-ray (in particular hard X-ray), or neutron ray), and multiply and output the electrons. The electron collector is transmissive for the high-energy ray. The electron collector is configured to collect the electrons multiplied and output from each of the first electron multiplier and the second electron multiplier, and output an electric pulse signal.

Abstract: A high-energy ray detector includes a detection unit in a vacuum container. The detection unit includes a first electron multiplier, a second electron multiplier, and an electron collector. Each of the first electron multiplier and the second electron multiplier has one or more MCPs each configured to emit electrons by interaction with an incident high-energy ray (?-ray, X-ray (in particular hard X-ray), or neutron ray), and multiply and output the electrons. The electron collector is transmissive for the high-energy ray. The electron collector is configured to collect the electrons multiplied and output from each of the first electron multiplier and the second electron multiplier, and output an electric pulse signal.

Abstract: An electron tube includes a housing having an internal space airtightly sealed, and an electrode configured to generation or detection of energy by electron emission in the internal space. The housing has a main body part made of an insulating material and formed with a recess constituting the internal space, and a lid part fixed to the main body part so as to close an opening of the recess. The recess expands toward the opening side. The main body part is fixed with a penetrating member that is electrically connected to the electrode and passes through the main body part. The penetrating member has an internal space projecting part that projects from a bottom surface of the recess into the internal space.

Abstract: A gamma ray detector is a detector detecting gamma rays and includes a photomultiplier tube having an entrance window and a photoelectric surface. The entrance window is a Cherenkov radiator. The photoelectric surface is formed on a vacuum side of the entrance window via an intermediate layer. The thickness of the intermediate layer is equal to or less than the wavelength of Cherenkov light emitted by an interaction of the gamma rays with the entrance window.

Abstract: A silicon substrate 12 has a main face in a (100) plane, whereby a fracture 17 generated from a molten processed region 13 acting as a start point extends in a cleavage direction of the silicon substrate 12 (a direction orthogonal to the main face of the silicon substrate 12). Here, a rear face 1b of an object to be processed 1A and a front face 10a of an object to be processed for separation 10A are bonded to each other by anode bonding, whereby the fracture 17 reaches a front face 1a of the object 1A continuously without substantially changing its direction. When generating a stress in the object for separation 10A, the fracture 17 has reached a rear face 10b of the object for separation 10A and thus easily extends toward the object 1A.

Abstract: A laser processing apparatus 1 is an apparatus for forming a modified region R in an object to be processed S by irradiating the object S with laser light L. The laser processing apparatus 1 comprises a laser light source 2 that emits the laser light L, a mount table 8 that supports the object S, and an optical system 11 that converges a ring part surrounding a center part including an optical axis of the laser light L in the laser light L emitted from the laser light source 2 at a predetermined part of the object S supported by the mount table 8. The optical system 11 adjusts a form of at least one of inner and outer edges of the ring part of the laser light L according to a position of the predetermined part in the object S.

Abstract: The present invention relates to an electron multiplier and others to effectively suppress luminescence noise, even in compact size, in which each of multistage dynodes has a plurality of columns each having a peripheral surface separated physically, and in which each column is processed in such a shape that an area or a peripheral length of a section parallel to an installation surface on which the electron multiplier is arranged becomes minimum at a certain position on the peripheral surface in the column of interest.

Abstract: The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate.

Abstract: The present invention relates to an electron multiplier and others to effectively suppress luminescence noise, even in compact size, in which each of multistage dynodes has a plurality of columns each having a peripheral surface separated physically, and in which each column is processed in such a shape that an area or a peripheral length of a section parallel to an installation surface on which the electron multiplier is arranged becomes minimum at a certain position on the peripheral surface in the column of interest.

Abstract: A silicon substrate 12 has a main face in a (100) plane, whereby a fracture 17 generated from a molten processed region 13 acting as a start point extends in a cleavage direction of the silicon substrate 12 (a direction orthogonal to the main face of the silicon substrate 12). Here, a rear face 1b of an object to be processed 1A and a front face 10a of an object to be processed for separation 10A are bonded to each other by anode bonding, whereby the fracture 17 reaches a front face 1a of the object 1A continuously without substantially changing its direction. When generating a stress in the object for separation 10A, the fracture 17 has reached a rear face 10b of the object for separation 10A and thus easily extends toward the object 1A.

Abstract: A silicon substrate 12 has a main face in a (100) plane, whereby a fracture 17 generated from a molten processed region 13 acting as a start point extends in a cleavage direction of the silicon substrate 12 (a direction orthogonal to the main face of the silicon substrate 12). Here, a rear face 1b of an object to be processed 1A and a front face 10a of an object to be processed for separation 10A are bonded to each other by anode bonding, whereby the fracture 17 reaches a front face 1a of the object 1A continuously without substantially changing its direction. When generating a stress in the object for separation 10A, the fracture 17 has reached a rear face 10b of the object for separation 10A and thus easily extends toward the object 1A.

Abstract: The present invention relates to an electron multiplier and others to effectively suppress luminescence noise, even in compact size, in which each of multistage dynodes has a plurality of columns each having a peripheral surface separated physically, and in which each column is processed in such a shape that an area or a peripheral length of a section parallel to an installation surface on which the electron multiplier is arranged becomes minimum at a certain position on the peripheral surface in the column of interest.

Abstract: The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate.

Abstract: A laser processing apparatus 1 is an apparatus for forming a modified region R in an object to be processed S by irradiating the object S with laser light L. The laser processing apparatus 1 comprises a laser light source 2 that emits the laser light L, a mount table 8 that supports the object S, and an optical system 11 that converges a ring part surrounding a center part including an optical axis of the laser light L in the laser light L emitted from the laser light source 2 at a predetermined part of the object S supported by the mount table 8. The optical system 11 adjusts a form of at least one of inner and outer edges of the ring part of the laser light L according to a position of the predetermined part in the object S.

Abstract: The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate.

Abstract: A method for manufacturing a light-absorbing substrate having a surface with depressions and projections comprises a first step of irradiating a substrate with a laser light so as to form a plurality of modified regions arranged two-dimensionally along a surface of the substrate within the substrate and cause at least one of each modified region and a fracture generated from the modified region to reach the surface of the substrate and a second step of etching the surface of the substrate after the first step so as to form depressions and projections on the surface of the substrate.

Abstract: In a method comprising a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a plurality of modified spots within the object along a modified region forming line tilted in a first lateral direction with respect to a thickness direction of the object and the plurality of modified spots construct a modified region, and an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the object with a space extending obliquely with respect to the thickness direction, the modified region forming step forms the plurality of modified spots such that the modified spots adjacent to each other at least partly overlap each other when seen in the first lateral direction.

Abstract: A laser processing method of converging laser light into an object to be processed made of silicon so as to form a modified region and etching the object along the modified region so as to form the object with a through hole comprises an etch resist film producing step of producing an etch resist film resistant to etching on an outer surface of the object; a laser light converging step of converging the laser light at the object after the etch resist film producing step so as to form the modified region along a part corresponding to the through hole in the object and converging the laser light at the etch resist film so as to form a defect region along a part corresponding to the through hole in the etch resist film; and an etching step of etching the object after the laser light converging step so as to advance the etching selectively along the modified region and form the through hole.

Abstract: A rear face 1b of an object to be processed 1A and a front face 10a of an object to be processed for separation 10A are bonded to each other by anode bonding, whereby a fracture 17 generated in a thickness direction of the object for separation 10A from a molten processed region 13 acting as a start point reaches a front face 1a of the object 1A continuously without substantially changing its direction. Then, after cutting the objects 1A, 10A, the object 10A is removed from the object 1A, so as to yield chips 19.