Abstract: A semiconductor device having favorable display quality is provided. The semiconductor device is provided with a display portion, a line-of-sight sensor portion, a control portion, and an arithmetic portion. The line-of-sight sensor portion has a function of obtaining first information showing a direction of a user's line of sight. The arithmetic portion has a function of determining a first region including a gaze point of the user on the display portion with use of the first information and a function of increasing a definition of an image displayed on the first region. Light emitted from the display portion may be used to obtain the first information showing the direction of the line of sight.

Abstract: A frontend circuit includes a wide-band filter, a transmit filter, and switches. The wide-band filter passes both the receive frequency band of a first communication frequency band and that of a second communication frequency band which is close to or overlaps that of the first communication frequency band. The transmit filter passes the transmit frequency band of the first or second communication frequency band. The switches are capable of simultaneously bringing, into conduction, at least two of multiple filters including the wide-band filter and the transmit filter. In carrier aggregation using the receive frequency bands of the first and second communication frequency bands, the switches simultaneously bring the wide-band filter and the transmit filter into conduction. Thus, in carrier aggregation using signals of multiple communication frequencies simultaneously in communication, attenuation of signals due to signal leakage in two receive frequency bands, which are close to each other, is suppressed.

Abstract: An electrical connector which suppresses radiation noise at a high frequency from an inner terminal, and an electrical connector set provided with the electrical connector. An electrical connector includes an inner terminal; an outer terminal surrounding the inner terminal; and a holding member that has electrically insulating properties, extends in the long-side direction and the short-side direction, and is configured to hold the inner terminal and the outer terminal. The holding member has a first surface located on the first side that is the side facing a mounting circuit board, a second surface located on the second side opposite from the first side, and an inner side surface and an outer side surface connecting the first surface to the second surface. The outer terminal includes a first part extending along the first surface, and an inner part connected to the first part and extending along the inner side surface.

Abstract: A frontend circuit includes a wide-band filter, a transmit filter, and switches. The wide-band filter passes both the receive frequency band of a first communication frequency band and that of a second communication frequency band which is close to or overlaps that of the first communication frequency band. The transmit filter passes the transmit frequency band of the first or second communication frequency band. The switches are capable of simultaneously bringing, into conduction, at least two of multiple filters including the wide-band filter and the transmit filter. In carrier aggregation using the receive frequency bands of the first and second communication frequency bands, the switches simultaneously bring the wide-band filter and the transmit filter into conduction. Thus, in carrier aggregation using signals of multiple communication frequencies simultaneously in communication, attenuation of signals due to signal leakage in two receive frequency bands, which are close to each other, is suppressed.

Abstract: A connector includes a resin member which includes a protruding portion extending in a right and left direction when viewed in an up and down direction, a frame portion having an annular shape surrounding the protruding portion when viewed in the up and down direction, and a coupling portion between the protruding portion and the frame portion when viewed in the up and down direction and coupling the protruding portion to the frame portion. A plurality of signal terminals is supported by the frame portion and arranged in the right and left direction in a region in front of or in back of the protruding portion. The floating terminal covers at least part of a left end of the protruding portion when viewed in the up and down direction and is not connected to any of terminals of a connector, including the signal terminals and a ground terminal.

Abstract: An electrical connector includes a holding member that is electrically insulating, and a signal terminal and a male ground terminal held by the holding member. The male ground terminal is disposed next to the signal terminal. The male ground terminal includes a first lengthwise extending part, a second lengthwise extending part opposed to the first lengthwise extending part, and a laterally connecting part connecting an end portion of the first lengthwise extending part and an end portion of the second lengthwise extending part. The male ground terminal projects in side view. The male ground terminal includes a connection path configured to electrically connect the first lengthwise extending part and the second lengthwise extending part.

Abstract: Provided are a semiconductor device and an inverter device with a decrease in yield being suppressed by preventing the adhesive from leaking into the inside of the semiconductor device. A heat sink, a wiring board provided on the heat sink, a semiconductor chip provided on the wiring board, a case housing provided on the heat sink so as to surround the wiring board and the semiconductor chip, an adhesive that adheres a lower surface joint portion of the case housing and an upper surface joint portion of the heat sink, a sealing material that fills the case housing and covers the wiring board and the semiconductor chip, and a convex portion provided on the lower surface joint portion of the case housing or the upper surface joint portion of the heat sink, that separates the adhesive from the sealing material are included.

Abstract: A multilayer substrate includes a pair of first capacitor electrodes, a pair of second capacitor electrodes, and a dielectric substrate. Electrodes of the pair of first capacitor electrodes are disposed in dielectric substrate so as to face each other in a thickness direction of the dielectric substrate. Electrodes of the pair of second capacitor electrodes are disposed in the dielectric substrate so as to face each other in the thickness direction. A first element and a second element that are disposed in or on the dielectric substrate, and the pair of second capacitor electrodes, the pair of first capacitor electrodes, and a ground electrode that are disposed in the dielectric substrate are arranged in the stated order in the thickness direction. The pair of second capacitor electrodes at least partially overlaps the pair of first capacitor electrodes when viewed in plan in the thickness direction.

Abstract: A multiplexer (100) includes a first filter (FLT1) that passes a signal in a first frequency band, a second filter (FLT2) that passes a signal in a second frequency band lower than the first frequency band, and a third filter (FLT3) that passes a signal in a third frequency band. The third frequency band is a frequency band higher than the first frequency band, or a frequency band lower than the second frequency band. The first filter includes a first inductor (L11) that forms a first attenuation pole on a low-frequency side of the first frequency band. The second filter includes a second inductor (L23) that forms a second attenuation pole on a high-frequency side of the second frequency band. At least a portion of a component constituting the third filter is disposed between the first inductor and the second inductor.

Abstract: A radio frequency circuit includes a multilayer substrate, series arm circuits in a first path connecting the input/output terminals (T1 and T2) on the multilayer substrate, a parallel arm circuit in a second path connecting a node on the first path and a ground, a wiring A on the multilayer substrate connected to the input/output terminal (T1) as a part of the first path, a wiring B on the multilayer substrate connected to the input/output terminal (T2) as a part of the first path, and a wiring C on the multilayer substrate as a part of the second path. The parallel arm circuit includes an impedance variable circuit, the wiring A and the wiring B in a layer different from the multilayer substrate. When viewed in a plan view, the wiring C does not overlap with the wiring A and the wiring B.

Abstract: A first connector of a connector set includes first internal terminals, a first insulation member that fixes the first internal terminals, and first external terminals having a surrounding shape portion that surrounds the first internal terminals and the first insulation member. The second connector includes second internal terminals, a second insulation member that fixes the second internal terminals, and a second external terminal having a surrounding shape portion that surrounds the second internal terminals and the second insulation member. The first external terminals have cutout portions at a portion that is part of the surrounding shape portion of the first external terminal and faces a ground conductor formed at a mounting position of the second connector of the second circuit substrate.

Abstract: The semiconductor device includes a semiconductor element, a plurality of terminal electrodes, internal wiring, and a sealing material. The semiconductor element is mounted on a circuit pattern provided on an insulating substrate. The plurality of terminal electrodes are provided on a case in which the insulating substrate and the semiconductor element are contained. The internal wiring connects the semiconductor element and the plurality of terminal electrodes. The sealing material fills a space in the case. The internal wiring includes a plurality of circuit patterns, a plurality of metal blocks, and metal wire. The plurality of metal blocks are electrically connected to the respective circuit patterns. The metal wire connects the plurality of metal blocks and is bonded to the plurality of metal blocks at positions closer to an upper surface of the sealing material than surfaces of the plurality of circuit patterns.

Abstract: A multiplexer capable of concurrently sending a radio-frequency signal in one of Band A and Band B belong to a low band group and a radio-frequency signal in a Band C belongs to a high band group that includes: a common terminal and input/output terminals; a low-pass filter arranged between the common terminal and the input/output terminal and whose pass band is frequencies in the low band group and whose attenuation band is frequencies in the high band group; and a high-pass filter arranged between the common terminal and the input/output terminal and whose pass band is the frequencies in the high band group and whose attenuation band is the frequencies in the low band group. The low-pass filter includes a first frequency-variable circuit including a switch, and at least one of the pass band and the attenuation band of the low-pass filter is changeable.

Abstract: A multilayer substrate includes a dielectric substrate, a pair of capacitor electrodes, and an input/output electrode that is an electrode for input, an electrode for output, or an electrode for input and output. The dielectric substrate has a first main surface and a second main surface that are opposite to each other in a thickness direction of the dielectric substrate. The pair of capacitor electrodes is disposed in the dielectric substrate. Electrodes of the pair of capacitor electrodes face each other in the thickness direction. The input/output electrode is disposed on the second main surface of the dielectric substrate. A capacitor that includes the pair of capacitor electrodes and a portion being part of the dielectric substrate and located between the electrodes of the pair of capacitor electrodes at least partially overlaps the input/output electrode electrically connected to the capacitor.

Abstract: A multiplexer (100) includes a first filter (FLT1) that passes a signal in a first frequency band, a second filter (FLT2) that passes a signal in a second frequency band lower than the first frequency band, and a third filter (FLT3) that passes a signal in a third frequency band. The third frequency band is a frequency band higher than the first frequency band, or a frequency band lower than the second frequency band. The first filter includes a first inductor (L11) that forms a first attenuation pole on a low-frequency side of the first frequency band. The second filter includes a second inductor (L23) that forms a second attenuation pole on a high-frequency side of the second frequency band. At least a portion of a component constituting the third filter is disposed between the first inductor and the second inductor.

Abstract: The semiconductor device includes a semiconductor element, a plurality of terminal electrodes, internal wiring, and a sealing material. The semiconductor element is mounted on a circuit pattern provided on an insulating substrate. The plurality of terminal electrodes are provided on a case in which the insulating substrate and the semiconductor element are contained. The internal wiring connects the semiconductor element and the plurality of terminal electrodes. The sealing material fills a space in the case. The internal wiring includes a plurality of circuit patterns, a plurality of metal blocks, and metal wire. The plurality of metal blocks are electrically connected to the respective circuit patterns. The metal wire connects the plurality of metal blocks and is bonded to the plurality of metal blocks at positions closer to an upper surface of the sealing material than surfaces of the plurality of circuit patterns.

Abstract: A filter includes a series arm resonator, a first parallel arm resonance circuit, and a second parallel arm resonance circuit. The first parallel arm resonance circuit includes: a first parallel arm resonator connected to a first node; a first capacitor and a first switch connected together in parallel and connected in series with the first parallel arm resonator; and a first inductor provided on a path connecting the node and ground to each other via the first switch. The second parallel arm resonance circuit includes: a second parallel arm resonator connected to a second node; a second capacitor and a second switch connected together in parallel and connected in series with the second parallel arm resonator; and a second inductor provided on a path connecting the second node and ground to each other via the second switch. The first and second inductor have different inductance values.

Abstract: A filter includes a series arm resonator, a first parallel arm resonance circuit and a second parallel arm resonance circuit. The each of the first parallel arm resonance circuit and the second parallel arm resonance circuit includes: a parallel arm resonator that is connected to a node; a pair of elements consisting of a capacitor and a switch, which are connected in parallel with each other, that is connected in series with the parallel arm resonator; and an inductor that is provided on a path that connects the node and ground to each other via the switch. The inductance value of the inductor of the first parallel arm resonance circuit and the inductance value of the inductor of the second parallel arm resonance circuit are substantially equal to each other.

Abstract: A multilayer substrate includes a pair of first capacitor electrodes, a pair of second capacitor electrodes, and a dielectric substrate. Electrodes of the pair of first capacitor electrodes are disposed in dielectric substrate so as to face each other in a thickness direction of the dielectric substrate. Electrodes of the pair of second capacitor electrodes are disposed in the dielectric substrate so as to face each other in the thickness direction. A first element and a second element that are disposed in or on the dielectric substrate, and the pair of second capacitor electrodes, the pair of first capacitor electrodes, and a ground electrode that are disposed in the dielectric substrate are arranged in the stated order in the thickness direction. The pair of second capacitor electrodes at least partially overlaps the pair of first capacitor electrodes when viewed in plan in the thickness direction.

Abstract: A frontend circuit includes a wide-band filter, a transmit filter, and switches. The wide-band filter passes both the receive frequency band of a first communication frequency band and that of a second communication frequency band which is close to or overlaps that of the first communication frequency band. The transmit filter passes the transmit frequency band of the first or second communication frequency band. The switches are capable of simultaneously bringing, into conduction, at least two of multiple filters including the wide-band filter and the transmit filter. In carrier aggregation using the receive frequency bands of the first and second communication frequency bands, the switches simultaneously bring the wide-band filter and the transmit filter into conduction. Thus, in carrier aggregation using signals of multiple communication frequencies simultaneously in communication, attenuation of signals due to signal leakage in two receive frequency bands, which are close to each other, is suppressed.