Abstract: A solid-state image sensor (1) includes: an imaging device wafer (2A); a plurality of imaging devices (3) which are formed on the imaging device wafer (2A); a spacer (5) which surrounds the imaging devices (3) on the imaging device wafer (2A) and is joined to the imaging device wafer (2A) with an adhesive (7); a transparent protection member (4) which covers the imaging devices (3) on the imaging device wafer (2A) and is attached on the spacer (5); and a plurality of electrostatic discharge protection devices (10A) which are formed on the imaging device wafer (2A), the electrostatic discharge protection devices (10A) being positioned under the spacer (5), each of the electrostatic discharge protection devices (10A) having diffusion layers (12, 13) and a well layer (11) between the diffusion layers (12, 13), the well layer (11) being provided with a channel stopper (20).

Abstract: A solid state imaging element comprises: photoelectric conversion elements; a plurality of vertical electric charge transfer passages that transfer, in a vertical direction, electric charges generated by the photoelectric conversion elements; and a horizontal electric charge transfer passage that transfers, in a horizontal direction perpendicular to the vertical direction, the electric charges transferred in the vertical electric charge transfer passage, wherein the horizontal electric charge transfer passage comprises a plurality of electric charge transferring stages each of which operates as an electric charge accumulating region or a barrier region according to a level of an applied voltage, and each of said plurality of electric charge transferring stages is connected to plural ones of the vertical electric charge transfer passages.

Abstract: A solid-state image pickup device (1) comprises: an image sensor wafer (2A) including image sensors (3); an optically-transparent protection member (4) connected by use of an adhesive agent (7) via a spacer (5) arranged to surround the image sensors (3); and an electrostatic (ESD) protection circuit (10) disposed on the image sensor wafer (2A) so as to avoid a position corresponding to a connected surface where the spacer (5) and the image sensor wafer (2A) are connected. Accordingly, in this configuration, even when polarization occurs in the adhesive agent, since the p-well layer between diffusion layers of the ESD protection circuit is not disposed immediately below the connected surface, the p-well layer is not inverted by electric charges in the element interface and thus parasitic MOS transistor does not turn on, allowing suppression of leak current.

Abstract: A solid-state image sensor (1) includes: an imaging device wafer (2A); a plurality of imaging devices (3) which are formed on the imaging device wafer (2A); a spacer (5) which surrounds the imaging devices (3) on the imaging device wafer (2A) and is joined to the imaging device wafer (2A) with an adhesive (7); a transparent protection member (4) which covers the imaging devices (3) on the imaging device wafer (2A) and is attached on the spacer (5); and a plurality of electrostatic discharge protection devices (10A) which are formed on the imaging device wafer (2A), the electrostatic discharge protection devices (10A) being positioned under the spacer (5), each of the electrostatic discharge protection devices (10A) having diffusion layers (12, 13) and a well layer (11) between the diffusion layers (12, 13), the well layer (11) being provided with a channel stopper (20).

Abstract: A solid state imaging element comprises: photoelectric conversion elements; a plurality of vertical electric charge transfer passages that transfer, in a vertical direction, electric charges generated by the photoelectric conversion elements; and a horizontal electric charge transfer passage that transfers, in a horizontal direction perpendicular to the vertical direction, the electric charges transferred in the vertical electric charge transfer passage, wherein the horizontal electric charge transfer passage comprises a plurality of electric charge transferring stages each of which operates as an electric charge accumulating region or a barrier region according to a level of an applied voltage, and each of said plurality of electric charge transferring stages is connected to plural ones of the vertical electric charge transfer passages.

Abstract: A solid-state imaging apparatus, comprising: a semiconductor substrate defining a two-dimensional surface; a multiplicity of photo electric conversion elements arranged in a plurality of rows and in a plurality of lines in a light receiving region of the semiconductor substrate and each accumulating signal electric charges; a vertical electric charge transfer device having a plurality of vertical electric charge transfer channels arranged vertically between rows of the photo electric conversion elements and a plurality of transfer electrodes horizontally arranged over the vertical electric charge transfer channels, wherein the vertical electric charge transfer device transfers the signal electrical charges accumulated by the photo eclectic conversion elements by setting a transfer line transferring vacant signals on an up stream side in a vertical direction of every transfer line transferring the signal electrical charges; reading out parts, each corresponding to each one of the multiplicity of the photo elec

Abstract: A drain region is formed along a horizontal charge transfer channel constituting a horizontal charge transfer element, and a barrier region for charges is formed between the horizontal charge transfer channel and drain region. A two-electrode element is formed by using the horizontal charge transfer channel, barrier region and drain region. A solid state image pickup device can be manufactured with high productivity, which device can drain charges in the horizontal charge transfer element at high speed.

Abstract: A spectral device is disposed above a semiconductor substrate formed with a number of photoelectric conversion elements. The spectral device has a plurality of spectral regions each corresponding to a plurality of photoelectric conversion elements, each of the spectral regions spectroscopically splitting light fluxes of a plurality of colors necessary for color imaging and contained in incidence light toward different directions, each of the spectroscopically split light fluxes becoming incident upon an associated photoelectric conversion element among the plurality of photoelectric conversion elements corresponding to each of the spectral regions.

Abstract: A drain region is formed along a horizontal charge transfer channel constituting a horizontal charge transfer element, and a barrier region for charges is formed between the horizontal charge transfer channel and drain region. A two-electrode element is formed by using the horizontal charge transfer channel, barrier region and drain region. A solid state image pickup device can be manufactured with high productivity, which device can drain charges in the horizontal charge transfer element at high speed.

Abstract: A drain region is formed along a horizontal charge transfer channel constituting a horizontal charge transfer element, and a barrier region for charges is formed between the horizontal charge transfer channel and drain region. A two-electrode element is formed by using the horizontal charge transfer channel, barrier region and drain region. A solid state image pickup device can be manufactured with high productivity, which device can drain charges in the horizontal charge transfer element at high speed.

Abstract: A solid-state imaging apparatus, comprising: a semiconductor substrate defining a two-dimensional surface; a multiplicity of photo electric conversion elements arranged in a plurality of rows and in a plurality of lines in a light receiving region of the semiconductor substrate and each accumulating signal electric charges; a vertical electric charge transfer device having a plurality of vertical electric charge transfer channels arranged vertically between rows of the photo electric conversion elements and a plurality of transfer electrodes horizontally arranged over the vertical electric charge transfer channels, wherein the vertical electric charge transfer device transfers the signal electrical charges accumulated by the photo eclectic conversion elements by setting a transfer line transferring vacant signals on an up stream side in a vertical direction of every transfer line transferring the signal electrical charges; reading out parts, each corresponding to each one of the multiplicity of the photo elec

Abstract: A spectral device is disposed above a semiconductor substrate formed with a number of photoelectric conversion elements. The spectral device has a plurality of spectral regions each corresponding to a plurality of photoelectric conversion elements, each of the spectral regions spectroscopically splitting light fluxes of a plurality of colors necessary for color imaging and contained in incidence light toward different directions, each of the spectroscopically split light fluxes becoming incident upon an associated photoelectric conversion element among the plurality of photoelectric conversion elements corresponding to each of the spectral regions.

Abstract: A drain region is formed along a horizontal charge transfer channel constituting a horizontal charge transfer element, and a barrier region for charges is formed between the horizontal charge transfer channel and drain region. A two-electrode element is formed by using the horizontal charge transfer channel, barrier region and drain region. A solid state image pickup device can be manufactured with high productivity, which device can drain charges in the horizontal charge transfer element at high speed.