Abstract: A method of producing a nickel-cobalt composite hydroxide includes: preparing a first solution containing nickel ions and cobalt ions; preparing a second solution containing tungsten ions and having a pH of 10 or more; preparing a third solution containing a complex ion-forming factor; preparing a liquid medium having a pH in a range of 10 to 13.5; supplying the first solution, the second solution, and the third solution separately and simultaneously to the liquid medium to obtain a reacted solution having a pH in a range of 10 to 13.5; and obtaining the nickel-cobalt composite hydroxide containing nickel, cobalt, and tungsten from the reacted solution.

Abstract: According to one embodiment, when a read request received from a host includes a first identifier indicative of a first region, a memory system obtains a logical address from the received read request, obtains a physical address corresponding to the obtained logical address from a logical-to-physical address translation table which manages mapping between logical addresses and physical addresses of the first region, and reads data from the first region, based on the obtained physical address. When the received read request includes a second identifier indicative of a second region, the memory system obtains physical address information from the read request, and reads data from the second region, based on the obtained physical address information.

Abstract: According to one embodiment, a memory system determine both of a first block to which data from a host is to be written and a first location of the first block, when receiving a write request to designate a first logical address from the host. The memory system writes the data from the host to the first location of the first block. The memory system notifies the host of the first logical address, a first block number designating the first block, and a first in-block offset indicating an offset from a leading part of the first block to the first location by a multiple of grain having a size different from a page size.

Abstract: According to one embodiment, a memory system receives a write request specifying a first logical address to which first data is to be written, and a length of the first data, from a host. The memory system writes the first data to a nonvolatile memory, and stores a first physical address indicating a physical storage location on the nonvolatile memory to which the first data is written, and the length of the first data, in an entry of a logical-to-physical address translation table corresponding to the first logical address. When the memory system receives a read request specifying the first logical address, the memory system acquires the first physical address and the length from the address translation table, and reads the first data from the nonvolatile memory.

Abstract: According to one embodiment, when receiving a write request to designate a first block number and a first logical address from a host, a memory system determines a first location in a first block having the first block number, to which data from the host is to be written, and writes the data from the host to the first location of the first block. The memory system updates a first address translation table managing mapping between logical addresses and in-block physical addresses of the first block, and maps a first in-block physical address indicative of the first location to the first logical address.

Abstract: A method of producing a nickel-cobalt composite hydroxide includes: preparing a first solution containing nickel ions and cobalt ions; preparing a second solution containing tungsten ions and having a pH of 10 or more; preparing a third solution containing a complex ion-forming factor; preparing a liquid medium having a pH in a range of 10 to 13.5; supplying the first solution, the second solution, and the third solution separately and simultaneously to the liquid medium to obtain a reacted solution having a pH in a range of 10 to 13.5; and obtaining the nickel-cobalt composite hydroxide containing nickel, cobalt, and tungsten from the reacted solution.

Abstract: According to one embodiment, a memory system includes a nonvolatile memory and a controller. The controller acquires, from a host, write data having the same first size as a data write unit of the nonvolatile memory and obtained by dividing write data associated with one write command having a first identifier indicating a first write destination block in a plurality of write destination blocks into a plurality of write data or combining write data associated with two or more write commands having the first identifier. The controller writes the acquired write data having the first size to the first write destination block by a first write operation.

Abstract: According to one embodiment, a memory system receives a write request specifying a first logical address to which first data is to be written, and a length of the first data, from a host. The memory system writes the first data to a nonvolatile memory, and stores a first physical address indicating a physical storage location on the nonvolatile memory to which the first data is written, and the length of the first data, in an entry of a logical-to-physical address translation table corresponding to the first logical address. When the memory system receives a read request specifying the first logical address, the memory system acquires the first physical address and the length from the address translation table, and reads the first data from the nonvolatile memory.

Abstract: A material defect detection device that detects a material defect in a predetermined region of metallic equipment using a magnetic field distribution in the predetermined region measured by a magnetic sensor array including a plurality of magnetic sensors, the material defect detection device including: a processor that calculates a density distribution of magnetic dipoles in the predetermined region based on the magnetic field distribution and calculates a depth distribution of material defect in the predetermined region based on the density distribution of the magnetic dipoles.

Abstract: A method for producing a nickel cobalt complex hydroxide includes first crystallization of supplying a solution containing Ni, Co and Mn, a complex ion forming agent and a basic solution separately and simultaneously to one reaction vessel to obtain nickel cobalt complex hydroxide particles, and a second crystallization of, after the first crystallization, further supplying a solution containing nickel, cobalt, and manganese, a solution of a complex ion forming agent, a basic solution, and a solution containing said element M separately and simultaneously to the reaction vessel to crystallize a complex hydroxide particles containing nickel, cobalt, manganese and said element M on the nickel cobalt complex hydroxide particles crystallizing a complex hydroxide particles comprising Ni, Co, Mn and the element M on the nickel cobalt complex hydroxide particles.

Abstract: According to one embodiment, a memory system receives from a host a first write request including a first block identifier designating a first write destination block to which first write data is to be written. The memory system acquires the first write data from a write buffer temporarily holding write data corresponding to each of the write requests, and writes the first write data to a write destination page in the first write destination block. The memory system releases a region in the write buffer, storing data which is made readable from the first write destination block by writing the first write data to the write destination page. The data made readable is a data of a page in the first write destination block preceding the write destination page.

Abstract: A method for producing a nickel cobalt complex hydroxide includes first crystallization of supplying a solution containing Ni, Co and Mn, a complex ion forming agent and a basic solution separately and simultaneously to one reaction vessel to obtain nickel cobalt complex hydroxide particles, and a second crystallization of, after the first crystallization, further supplying a solution containing nickel, cobalt, and manganese, a solution of a complex ion forming agent, a basic solution, and a solution containing said element M separately and simultaneously to the reaction vessel to crystallize a complex hydroxide particles containing nickel, cobalt, manganese and said element M on the nickel cobalt complex hydroxide particles crystallizing a complex hydroxide particles comprising Ni, Co, Mn and the element Mon the nickel cobalt complex hydroxide particles.

Abstract: A tube rack of a centrifugal separator, in which a bottom rubber portion can be readily mounted and readily replaced, and yet such bottom rubber portion cannot be easily separated. The tube rack includes a holder (14) including a plurality of tube holes (12) each configured to accommodate a tube that is used for a sample and each includes an opening at one end portion of the holder serving as a tube insertion side, and an opening at a bottom portion of the holder that is at the other end. The tube rack includes a bottom rubber portion (15) including a plurality of bottom rubber members (25) each fits in the tube hole (12), and including connecting pieces (24). The tube rack includes a base (13) formed in a cylindrical shape having a bottom configured to accommodate and detachably hold the holder (14) and the bottom rubber portion (15), and to be inserted into a bucket of the centrifugal separator.

Abstract: According to one embodiment, a memory system receives, from a host, a write request including a first identifier associated with one write destination block and storage location information indicating a location in a write buffer on a memory of the host in which first data to be written is stored. When the first data is to he written to a nonvolatile memory, the memory system obtains the first data from the write buffer by transmitting a transfer request including the storage location information to the host, transfers the first data to the nonvolatile memory, and writes the first data to the one write destination block.

Abstract: According to one embodiment, an information processing apparatus stores first data to be written to one destination block of a nonvolatile memory in a write buffer on a memory of the information processing apparatus. The information processing apparatus transmits, to a storage device, a write request including a first identifier associated with the one write destination block and storage location information indicating a location in the write buffer in which the first data is stored. The information processing apparatus transfers the first data from the write buffer to the storage device every time a transfer request including the storage location information is received from the storage device.

Abstract: According to one embodiment, a memory system manages wear of each of a plurality of blocks in a nonvolatile memory. The memory system receives, from a host, a write request including a parameter specifying a data retention term required for first data to be written. The memory system selects, from the blocks, a first block in which a data retention term estimated from the wear of the first block is longer than or equal to the specified data retention term. The memory system writes the first data to the first block.

Abstract: According to one embodiment, a memory system includes a nonvolatile memory including plural blocks each including plural pages, and a controller. When receiving a write request designating a first logical address and a first block number from the host, the controller determines a first location in a first block having the first block number to which data from the host should be written, and writes the data from the host to the first location in the first block. The controller notifies the host of either an in-block physical address indicative of the first location, or a group of the first logical address, the first block number and the first in-block physical address.

Abstract: According to one embodiment, when a read request received from a host includes a first identifier indicative of a first region, a memory system obtains a logical address from the received read request, obtains a physical address corresponding to the obtained logical address from a logical-to-physical address translation table which manages mapping between logical addresses and physical addresses of the first region, and reads data from the first region, based on the obtained physical address. When the received read request includes a second identifier indicative of a second region, the memory system obtains physical address information from the read request, and reads data from the second region, based on the obtained physical address information.

Abstract: According to one embodiment, a storage includes a nonvolatile memory and a controller configured to control the nonvolatile memory. The storage is supplied with first power from a power supply unit. The controller is configured to change power supplied from the power supply unit from the first power to second power based on a power control command transmitted from a host. The power control command includes a first parameter identifying the storage and a second parameter indicative of the second power.

Abstract: According to one embodiment, a memory device includes a first memory, a control circuit controlling the first memory, and a second memory storing a second program. The second program manages management information associated with the first memory, sends the management information conforming to a specific interface to a first program if a command conforming to the specific interface is an output command to output the management information. The second program receives first information conforming to the specific interface and issued by the first program, translates the first information into second information corresponding to the second program, translates the second information into third information corresponding to the control circuit, and executes processing for the first memory in accordance with the third information.