Abstract: A wafer heating apparatus is provided, including a heat-homogenizing plate comprising a ceramic substrate and having a mounting surface which is an upper surface of the ceramic substrate for mounting a wafer thereon, a heating element provided on the lower surface of the heat-homogenizing plate and pad electrodes connecting electrically to the heating element on said lower surface, wherein the mounting major surface is convex, particularly, with the height of the central portion of the mounting major surface with respect to the periphery thereof is in a range of 10 to 80 &mgr;m. In the wafer heating apparatus a plurality of supporting pins are planted on the mounting surface to support the wafer thereon placed from the mounting surface. The ceramic substrate includes silicon carbide, and an insulating layer is secured on the ceramic substrate and the heating element is secured on said insulating layer, the insulating layer being a glass layer having an lower expansion coefficient by 0.

Abstract: A wafer heating apparatus is provided, including a heat-homogenizing plate comprising a ceramic substrate and having a mounting surface which is an upper surface of the ceramic substrate for mounting a wafer thereon, a heating element provided on the lower surface of the heat-homogenizing plate and pad electrodes connecting electrically to the heating element on said lower surface, wherein the mounting major surface is convex, particularly, with the height of the central portion of the mounting major surface with respect to the periphery thereof is in a range of 10 to 80 &mgr;m. In the wafer heating apparatus a plurality of supporting pins are planted on the mounting surface to support the wafer thereon placed from the mounting surface. The ceramic substrate includes silicon carbide, and an insulating layer is secured on the ceramic substrate and the heating element is secured on said insulating layer, the insulating layer being a glass layer having an lower expansion coefficient by 0.