Patents by Inventor Hidenori Suenaga
Hidenori Suenaga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120018206Abstract: There is provided a capacitor that has excellent transient response characteristics, can be used as a distributed constant type noise filter, and can be used as a composite component having two functions of a capacitor and a distributed constant type noise filter through further reduction of an ESL of a solid electrolytic capacitor with a solid electrolytic capacitor of which capacitance is easily increased. There are prepared two capacitor element pieces 121 where both ends of an anode body of each of the capacitor element pieces form anode lead-out portions 122 and 122 and both surfaces of a middle portion of the anode body form cathode lead-out portions 123. The two capacitor element pieces 121 and 121 are stacked so that the cathode lead-out portions 123 and 123 overlap with each other and the anode lead-out portions 122 and 122 are substantially orthogonal to each other. Accordingly, a capacitor element 120 is formed.Type: ApplicationFiled: March 30, 2010Publication date: January 26, 2012Applicant: NIPPON CHEM-CON CORPORATIONInventors: Hidenori Suenaga, Yoshihiro Takeda, Miyuki Ujiie, Katsunori Nogami, Toshiyuki Murakami, Hitoshi Aita
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Patent number: 7995972Abstract: There are provided a transmission/reception switching circuit which is small in insertion loss and harmonic distortion and allows an increase in the output power of a power amplifier and an electronic component for communication on which the transmission/reception switching circuit is mounted. As an element composing a transmission/reception switching circuit in a wireless communication system, series-connected FETs or a multi-gate FET are used in place of a diode. Gate resistors connected between the individual gate terminals and a control terminal are designed to have resistance values which become progressively smaller from the gate to which a highest voltage is applied toward the gate to which a lowest voltage is applied.Type: GrantFiled: August 5, 2008Date of Patent: August 9, 2011Assignee: Renesas Electronics CorporationInventors: Akishige Nakajima, Takashi Ogawa, Hidenori Suenaga, Eigo Tange, Shinya Osakabe, Yasushi Shigeno
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Publication number: 20080299914Abstract: There are provided a transmission/reception switching circuit which is small in insertion loss and harmonic distortion and allows an increase in the output power of a power amplifier and an electronic component for communication on which the transmission/reception switching circuit is mounted. As an element composing a transmission/reception switching circuit in a wireless communication system, series-connected FETs or a multi-gate FET are used in place of a diode. Gate resistors connected between the individual gate terminals and a control terminal are designed to have resistance values which become progressively smaller from the gate to which a highest voltage is applied toward the gate to which a lowest voltage is applied.Type: ApplicationFiled: August 5, 2008Publication date: December 4, 2008Applicant: Renesas Technology CorporationInventors: Akishige Nakajima, Takashi Ogawa, Hidenori Suenaga, Eigo Tange, Shinya Osakabe, Yasushi Shigeno
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Patent number: 7437129Abstract: There are provided a transmission/reception switching circuit which is small in insertion loss and harmonic distortion and allows an increase in the output power of a power amplifier and an electronic component for communication on which the transmission/reception switching circuit is mounted. As an element composing a transmission/reception switching circuit in a wireless communication system, series-connected FETs or a multi-gate FET are used in place of a diode. Gate resistors connected between the individual gate terminals and a control terminal are designed to have resistance values which become progressively smaller from the gate to which a highest voltage is applied toward the gate to which a lowest voltage is applied.Type: GrantFiled: August 20, 2007Date of Patent: October 14, 2008Assignee: Renesas Technology Corp.Inventors: Akishige Nakajima, Takashi Ogawa, Hidenori Suenaga, Eigo Tange, Shinya Osakabe, Yasushi Shigeno
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Publication number: 20080042776Abstract: There are provided a transmission/reception switching circuit which is small in insertion loss and harmonic distortion and allows an increase in the output power of a power amplifier and an electronic component for communication on which the transmission/reception switching circuit is mounted. As an element composing a transmission/reception switching circuit in a wireless communication system, series-connected FETs or a multi-gate FET are used in place of a diode. Gate resistors connected between the individual gate terminals and a control terminal are designed to have resistance values which become progressively smaller from the gate to which a highest voltage is applied toward the gate to which a lowest voltage is applied.Type: ApplicationFiled: August 20, 2007Publication date: February 21, 2008Inventors: Akishige Nakajima, Takashi Ogawa, Hidenori Suenaga, Eigo Tange, Shinya Osakabe, Yasushi Shigeno
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Patent number: 7312482Abstract: The present invention is directed to improve high frequency characteristics by reducing inductance of a source. In an HEMT assembled in a power amplifier device, each of a drain electrode, a source electrode, and a gate electrode is constructed by a base portion and a plurality of fingers projected in a comb-teeth shape from the base portion, and the fingers of the electrodes mesh with each other. In the source electrode, a width of the fingers positioned at both ends of the plurality of fingers is wider than a width of each of the fingers positioned between both ends. The width of each of the fingers positioned at both ends is a width equal to or larger than a sum of the widths of the plurality of fingers positioned between both ends, and the width of the base portion is wider than that of each of the fingers positioned at both ends. An electrode pad provided for the source base portion and an external electrode terminal are connected to each other via a conductive wire.Type: GrantFiled: October 3, 2006Date of Patent: December 25, 2007Assignee: Renesas Technology Corp.Inventors: Akishige Nakajima, Hidenori Suenaga, Eigo Tange
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Patent number: 7269392Abstract: There are provided a transmission/reception switching circuit which is small in insertion loss and harmonic distortion and allows an increase in the output power of a power amplifier and an electronic component for communication on which the transmission/reception switching circuit is mounted. As an element composing a transmission/reception switching circuit in a wireless communication system, series-connected FETs or a multi-gate FET are used in place of a diode. Gate resistors connected between the individual gate terminals and a control terminal are designed to have resistance values which become progressively smaller from the gate to which a highest voltage is applied toward the gate to which a lowest voltage is applied.Type: GrantFiled: August 19, 2004Date of Patent: September 11, 2007Assignee: Renesas Technology Corp.Inventors: Akishige Nakajima, Takashi Ogawa, Hidenori Suenaga, Eigo Tange, Shinya Osakabe, Yasushi Shigeno
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Publication number: 20070023897Abstract: The present invention is directed to improve high frequency characteristics by reducing inductance of a source. In an HEMT assembled in a power amplifier device, each of a drain electrode, a source electrode, and a gate electrode is constructed by a base portion and a plurality of fingers projected in a comb-teeth shape from the base portion, and the fingers of the electrodes mesh with each other. In the source electrode, a width of the fingers positioned at both ends of the plurality of fingers is wider than a width of each of the fingers positioned between both ends. The width of each of the fingers positioned at both ends is a width equal to or larger than a sum of the widths of the plurality of fingers positioned between both ends, and the width of the base portion is wider than that of each of the fingers positioned at both ends. An electrode pad provided for the source base portion and an external electrode terminal are connected to each other via a conductive wire.Type: ApplicationFiled: October 3, 2006Publication date: February 1, 2007Inventors: Akishige Nakajima, Hidenori Suenaga, Eigo Tange
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Publication number: 20050079829Abstract: An antenna switch having a simple configuration and realizing high isolation between transmitting and receiving is provided. The antenna switch has a first switch connected between a transmitting terminal 31 and an antenna terminal 4, a transmission circuit 9 whose one end is connected to the antenna terminal and which shifts a phase of a transmitting signal by 90 degrees at use frequency, a second switch 6 whose one end is connected to the other end of the transmission circuit 9 and whose other end is grounded, and a plurality of third switches 7, 8 connected between the other end of the transmission circuit 9 and the plurality of receiving terminals 32, 33.Type: ApplicationFiled: August 20, 2004Publication date: April 14, 2005Inventors: Takashi Ogawa, Hiroshi Kondoh, Hidenori Suenaga, Akishige Nakajima
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Publication number: 20050047038Abstract: There are provided a transmission/reception switching circuit which is small in insertion loss and harmonic distortion and allows an increase in the output power of a power amplifier and an electronic component for communication on which the transmission/reception switching circuit is mounted. As an element composing a transmission/reception switching circuit in a wireless communication system, series-connected FETs or a multi-gate FET are used in place of a diode. Gate resistors connected between the individual gate terminals and a control terminal are designed to have resistance values which become progressively smaller from the gate to which a highest voltage is applied toward the gate to which a lowest voltage is applied.Type: ApplicationFiled: August 19, 2004Publication date: March 3, 2005Inventors: Akishige Nakajima, Takashi Ogawa, Hidenori Suenaga, Eigo Tange, Shinya Osakabe, Yasushi Shigeno
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Publication number: 20040164407Abstract: The present invention is directed to improve high frequency characteristics by reducing inductance of a source. In an HEMT assembled in a power amplifier device, each of a drain electrode, a source electrode, and a gate electrode is constructed by a base portion and a plurality of fingers projected in a comb-teeth shape from the base portion, and the fingers of the electrodes mesh with each other. In the source electrode, a width of the fingers positioned at both ends of the plurality of fingers is wider than a width of each of the fingers positioned between both ends. The width of each of the fingers positioned at both ends is a width equal to or larger than a sum of the widths of the plurality of fingers positioned between both ends, and the width of the base portion is wider than that of each of the fingers positioned at both ends. An electrode pad provided for the source base portion and an external electrode terminal are connected to each other via a conductive wire.Type: ApplicationFiled: February 25, 2004Publication date: August 26, 2004Inventors: Akishige Nakajima, Hidenori Suenaga, Eigo Tange