Abstract: A push-pull amplifier includes a pair of transistors, wherein each of the transistors has a control terminal, a first terminal, and a second terminal. A current that flows between the first terminal and the second terminal is controlled in accordance with signals applied to the control terminal, such that when an amount of current flowing between the first terminal and the second terminal of one of the transistors is within a predetermined range, a high-frequency component of the signals input to the control terminal of one of the transistors is amplified, and when this current is outside the predetermined range, the high frequency component is not amplified.

Abstract: A push-pull amplifier comprising at least one pair of transistors wherein the transistors comprising the pair of transistors are transistors having a control terminal, a first terminal, and a second terminal, and the current that flows between the first terminal and the second terminal is controlled in accordance with signals applied to the control terminal, this push-pull amplifier being characterized in that when the amount of current flowing between the first terminal and the second terminal of one of the pair of transistors is within a predetermined range, the high-frequency component of the signals input to the control terminal of one of the pair of transistors is amplified in comparison to the case when this current is outside the predetermined range.

Abstract: A device power supply includes an amplifier, a high output-side force terminal connected to the output of the amplifier, a high-output side sense terminal, and a first feedback circuit from the high output-side sense terminal to the input of the amplifier, where there is a first low-pass filter in between the amplifier output and the first feedback circuit.

Abstract: A high output amplifier includes a comparison amplifier having a first input, a second input, and an output, wherein a set voltage is applied to the first input, a voltage of the output is coupled to the second input, and the output is generated in response to a difference between the voltage applied to the first input and the voltage coupled to the second input. The high output amplifier also includes a low-pass filtering device that receives and performs low-pass filtering on the output of the comparison amplifier, a conversion device that converts the output of the low-pass filtering device to complementary signals, and a push-pull output device, driven by the complementary signals, that supplies electrical current to a load, wherein an increase in the electrical current supplied by the push-pull output device is decreased by changes in the load due to the low-pass filtering device.

Abstract: A high output amplifier includes a comparison amplifier having a first input, a second input, and an output, wherein a set voltage is applied to the first input, a voltage of the output is coupled to the second input, and the output is generated in response to a difference between the voltage applied to the first input and the voltage coupled to the second input. The high output amplifier also includes a low-pass filtering device that receives and performs low-pass filtering on the output of the comparison amplifier, a conversion device that converts the output of the low-pass filtering device to complementary signals, and a push-pull output device, driven by the complementary signals, that supplies electrical current to a load, wherein an increase in the electrical current supplied by the push-pull output device is decreased by changes in the load due to the low-pass filtering device.

Abstract: A device power supply includes an amplifier, a high output-side force terminal connected to the output of the amplifier, a high-output side sense terminal, and a first feedback circuit from the high output-side sense terminal to the input of the amplifier, where there is a first low-pass filter in between the amplifier output and the first feedback circuit.

Abstract: A prober interface card is provided which improves dielectric absorption characteristics between needles and signal patterns, and conductors with different potentials. A side guard conductor, having a specific height and depth, is disposed so that there is no insulating material between a needle with a connected signal pattern and an adjacent needle with its side guard conductor.

Abstract: A ramp voltage is applied through a current limiter 2 to a DUT 3. Setting as a reference time point (t.sub.1) a time when a ramp portion of the response voltage V of the DUT 3 has settled to a prescribed value (for example, when the voltage gradient is reduced by a predetermined rate to the ramp rate RR/2), the measurement is carried out, at time t.sub.2, after a predetermined interval from the reference time t.sub.2. Accordingly, a breakdown voltage is measured before the response voltage V of the DUT 3 is influenced by heat, etc., power consumption is reduced and an excessive stress is not applied to the DUT 3, so that no damage or burning occurs in the DUT 3.

Abstract: Apparatus for measuring a hysteresis characteristic of magnetic material, dielectric material or the like in a high frequency range without using a high-speed A/D converter. A current having a predetermined frequency is applied to an object being examined 4 and the magnetic field and magnetic flux density in the object 4 are detected. The detection signals are successively subjected to frequency conversion with predetermined frequencies corresponding to a fundamental wave and harmonic waves by mixers 17, 18. The frequency-converted signals are input to bandpass filters 19, 20. The output signals of the bandpass filters, which are signals of an intermediate frequency, are converted to digital signals by A/D converters 25, 26, the apparatus thereby detecting the fundamental wave component and each higher harmonic component.

Abstract: Disclosed is a measurement method and apparatus by which measurement of the breakdown voltage of a semiconductor device under test (DUT) may be conducted with an inexpensive measuring system in which thermal stress applied to the DUT is small and thus measurement error caused by characteristic change of the DUT is less. A constant current smaller than the breakdown current of the DUT is applied to a DUT using a constant current source, and waveforms between terminals of said DUT are observed by a waveform observation device, thereby measuring the trigger voltage and the latchback voltage. When a constant current I is applied to the DUT from the constant current source, a stray capacitance C between terminals of said DUT is charged. Thus, the voltage between terminals of said DUT is increased with a constant inclination (I/C) as time goes by.

Abstract: An apparatus for producing a high voltage comprising a high voltage output means operating on a system common voltage, and a floating power supply means operating on the output voltage from the high voltage output means which is at a floating common potential.

Abstract: An apparatus is disclosed which can accurately measure time variant non-ideal device impedance without unwanted delays caused by internal filters. A novel scheme is used which reduces both noise and drift so that the measurement of time variant capacitance and conductance can be made with increased precision for accurately determining such semiconductor characteristics as carrier lifetime and trap level.