Patents by Inventor Hideo Ihara
Hideo Ihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7795181Abstract: An oxide high temperature superconductor and method of making which includes a first buffer layer composed of CeO3 formed on a sapphire R (1, ?1, 0, 2) face substrate for reducing lattice mismatch between the sapphire R (1, ?1, 0, 2) face substrate and the oxide high temperature superconductor thin film, and a second buffer layer composed of such an oxide high temperature superconductor but in which Ba is substituted with Sr formed on the first buffer layer. The first buffer layer reduces the lattice mismatch between the sapphire R (1, ?1, 0, 2) face substrate and the oxide high temperature superconductor thin, the second buffer layer prevents an interfacial reaction with Ba, thereby permitting the epitaxial growth of an oxide high temperature superconductor thin film that excels in both crystallographic integrity and crystallographic orientation.Type: GrantFiled: September 5, 2002Date of Patent: September 14, 2010Assignee: Japan Science and Technology AgencyInventors: Sundaresan Athinarayanan, Hideo Ihara, Yoshiko Ihara, legal representative, Hideyo Ihara, legal representative, Hidetaka Ihara, legal representative, Gen-ei Ihara, legal representative, Chiaki Ihara, legal representative
-
Publication number: 20090048113Abstract: A superconducting thin film is disclosed having columnar pinning centers utilizing nano dots, and comprising nano dots (3) which are formed insularly on a substrate (2) and three-dimensionally in shape and composed of a material other than a superconducting material and also other than a material of which the substrate is formed, columnar defects (4) composed of the superconducting material and grown on the nano dots (3), respectively, a lattice defect (6) formed on a said columnar defect (4), and a thin film of the superconducting material (5) formed in those areas on the substrate which are other than those where said columnar defects are formed.Type: ApplicationFiled: October 9, 2008Publication date: February 19, 2009Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Ioan Adrian Crisan, Hideo Ihara, Yoshiko Ihara, Hideyo Ihara, Hidetaka Ihara, Gen-ei Ihara, Chiaki Ihara
-
Patent number: 7491678Abstract: A superconducting thin film is disclosed having columnar pinning centers utilizing nano dots, and comprising nano dots (3) which are formed insularly on a substrate (2) and three-dimensionally in shape and composed of a material other than a superconducting material and also other than a material of which the substrate is formed, columnar defects (4) composed of the superconducting material and grown on the nano dots (3), respectively, a lattice defect (6) formed on a said columnar defect (4), and a thin film of the superconducting material (5) formed in those areas on the substrate which are other than those where said columnar defects are formed.Type: GrantFiled: June 17, 2002Date of Patent: February 17, 2009Assignees: Japan Science and Technology Agency, National Institute of Advanced Industrial Science and TechnologyInventors: Ioan Adrian Crisan, Yoshiko Ihara, legal representative, Hideyo Ihara, legal representative, Hidetaka Ihara, legal representative, Gen-ei Ihara, legal representative, Chiaki Ihara, legal representative, Hideo Ihara
-
Patent number: 7335283Abstract: A method and an apparatus which permits making a composite oxide thin film excellent in crystallinity easily and at a low temperature, with the capability of controlling the basic unit cell structure as desired, and without the need for a post annealing, as well as a composite oxide thin film thereby, especially a Cu group high temperature superconducting thin film, are disclosed. A thin Cu group high temperature superconducting film, which is constituted of a charge supply block (1) and a superconducting block (2), is formed on a substrate by alternately sputtering from a sputtering target having a composition of the charge supply block (1) and a sputtering target having a composition of the superconducting block (2) and repeating such an alternate sputtering operation a number of times needed for the film to reach a desired thickness.Type: GrantFiled: August 24, 2001Date of Patent: February 26, 2008Assignees: Japan Science and Technology Corporation, National Institute of Advanced Industrial Science and TechnologyInventors: Yoshiko Ihara, legal representative, Hideyo Ihara, legal representative, Hidetaka Ihara, legal representative, Gen-ei Ihara, legal representative, Chiaki Ihara, legal representative, Sundaresan Athinarayanan, JiaCai Nie, Hideo Ihara
-
Publication number: 20040254078Abstract: Disclosed is an oxide high temperature superconductor having a crystalline substrate of low dielectric constant formed thereon with a thin film of the oxide high temperature superconductor that is high in crystallographic integrity and excels in crystallographic orientation as well as a method of making such an oxide high temperature superconductor.Type: ApplicationFiled: February 23, 2004Publication date: December 16, 2004Inventors: Sundaresan Athinarayanan, Hideo Ihara, Yoshiko Ihara, Hideyo Ihara, Hidetaka Ihara, Gen-ei Ihara, Chiaki Ihara
-
Publication number: 20040235670Abstract: A superconducting thin film is disclosed having columnar pinning centers utilizing nano dots, and comprising nano dots (3) which are formed insularly on a substrate (2) and three-dimensionally in shape and composed of a material other than a superconducting material and also other than a material of which the substrate is formed, columnar defects (4) composed of the superconducting material and grown on the nano dots (3), respectively, a lattice defect (6) formed on a said columnar defect (4), and a thin film of the superconducting material (5) formed in those areas on the substrate which are other than those where said columnar defects are formed.Type: ApplicationFiled: May 12, 2004Publication date: November 25, 2004Inventors: Ioan Adrian Crisan, Hideo Ihara
-
Patent number: 6767866Abstract: Proposed are a selective reduction type high temperature superconductor and methods of making the same, the superconductor having a pair of charge supply layers each formed of a Cu1-xMx surface (1, 1), a first superconducting layer formed of a 5-coordination CuO2 surface (2) and a second superconducting layer formed of a 4-coordination CuO2 surface (3). Reducing M ions (e.g., Tl ions) in the charge supply layers by heat treatment in a reducing atmosphere enables the 5-coordination CuO2 surface (2) as the first superconducting layer to be over-doped and the 4-coordination CuO2 surface (3) as the second superconducting layer to be optimum-doped. According to the present invention, a high temperature superconductor is provided that with its critical temperature held high has a reduced superconducting anisotropy &ggr;, and provides a high critical current density Jc and a high c irreversibility field Hirr.Type: GrantFiled: September 26, 2001Date of Patent: July 27, 2004Assignees: Japan Science and Technology Agency, National Institute of Advanced Industrial Science and TechnologyInventor: Hideo Ihara
-
Publication number: 20040127064Abstract: A method and an apparatus which permits making a composite oxide thin film excellent in crystallinity easily and at a low temperature, with the capability of controlling the basic unit cell structure as desired, and without the need for a post annealing., as well as a composite oxide thin film thereby, especially a Cu group high temperature superconducting thin film, are disclosed. A thin Cu group high temperature superconducting film, which is constituted of a charge supply block (1) and a superconducting block (2), is formed on a substrate by alternately sputtering from a sputtering target having a composition of the charge supply block (1) and a sputtering target having a composition of the superconducting block (2) and repeating such an alternate sputtering operation a number of times needed for the film to reach a desired thickness.Type: ApplicationFiled: November 20, 2003Publication date: July 1, 2004Inventors: Hideo Ihara, Yoshiko Ihara, Hideyo Ihara, Hidetaka Ihara, Gen-ei Ihara, Chiaki Ihara, Sundaresan Athinarayanan, JiaCai Nie
-
Patent number: 6605569Abstract: A Mg-doped high-temperature superconductor having low superconducting anisotropy includes a two-dimensional layered structure constituted by a charge reservoir layer and a superconducting layer, wherein some or all atoms constituting the charge reservoir layer are Cu and O atoms, metallizing or rendering the charge reservoir layer superconducting, a portion of the Ca of the CunCan+1O2n constituting the superconducting layer is replaced by Mg, increasing superconductive coupling between CuO2 layers, a thickness of the superconducting layer is increased, and therefore coherence length in a thickness direction is increased based on the uncertainty principle, lowering superconducting anisotropy.Type: GrantFiled: June 1, 2001Date of Patent: August 12, 2003Assignee: Agency of Industrial Science and Technology Ministry of International Trade and IndustryInventors: Hideo Ihara, Shyam Kishore Agarwal
-
Patent number: 6444620Abstract: A high-temperature superconductor having low superconducting anisotropy includes a two-dimensional layered structure of crystal unit cells each consisting of a pair of superconducting layer and charge reservoir layer. At least a portion of the atoms of the charge reservoir layer are replaced by atoms giving superconductivity, rendering the charge reservoir layer superconducting and lowering the superconducting anisotropy by increasing the coherence length in the thickness direction.Type: GrantFiled: February 27, 1998Date of Patent: September 3, 2002Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & IndustryInventor: Hideo Ihara
-
Publication number: 20020013231Abstract: A Mg-doped high-temperature superconductor having low superconducting anisotropy includes a two-dimensional layered structure constituted by a charge reservoir layer and a superconducting layer, wherein some or all atoms constituting the charge reservoir layer are Cu and O atoms, metallizing or rendering the charge reservoir layer superconducting, a portion of the Ca of the CunCan-1O2n constituting the superconducting layer is replaced by Mg, increasing superconductive coupling between CuO2 layers, a thickness of the superconducting layer is increased, and therefore coherence length in a thickness direction is increased based on the uncertainty principle, lowering superconducting anisotropy.Type: ApplicationFiled: June 1, 2001Publication date: January 31, 2002Applicant: AGY OF IND. SCI. & TEC., MIN. OF INT. TRD. & IND.Inventors: Hideo Ihara, Shyam Kishore Agarwal
-
Patent number: 6300284Abstract: A copper-based high-temperature superconducting material includes a carrier supply layer overdoped with carriers; and a superconducting layer comprised of at least three CuO2 layers that are selectively doped with the carriers; whereby a high superconducting transition temperature (Tc) is maintained to be not less than 116 K, critical current density (Jc) is improved to be 5×106 A/cm2 (77 K, 0 T), and irreversible field (Hirr) is improved to be not less than 7 T.Type: GrantFiled: September 13, 1999Date of Patent: October 9, 2001Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & IndustryInventors: Hideo Ihara, Yoshiyasu Sekita
-
Patent number: 6281171Abstract: A Mg-doped high-temperature superconductor having low superconducting anisotropy includes a two-dimensional layered structure constituted by a charge reservoir layer and a superconducting layer, wherein some or all atoms constituting the charge reservoir layer are Cu and O atoms, metallizing or rendering the charge reservoir layer superconducting, a portion of the Ca of the CunCan−1O2n constituting the superconducting layer is replaced by Mg, increasing superconductive coupling between CuO2 layers, a thickness of the superconducting layer is increased, and therefore coherence length in a thickness direction is increased based on the uncertainty principle, lowering superconducting anisotropy.Type: GrantFiled: March 16, 1999Date of Patent: August 28, 2001Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & IndustryInventors: Hideo Ihara, Shyam Kishore Agarwal
-
Patent number: 6218341Abstract: A process for preparing a superconductor which is a low anisotropy, high temperature superconductor, includes providing a target in molded form comprised of one of the superconductor or constituent elements of the superconductor, the superconductor having a layered crystal structure, having a superconducting transition temperature, Tc, of 110 K or more, and having a composition expressed by Cu1−zMzAe2Cax−1CuxOy where M is at least one member selected from the group consisting of (a) a trivalent ion of Tl, and (b) polyvalent ions of Mo, W, and Re, Ae is at least one of Ba and Sr, x ranges from 1 to 10, and y ranges from 2x+1 to 2x+4, and z ranges from 0<z≦0.5; and forming a film of the superconductor from the target on a substrate by one of sputtering or laser abrasion.Type: GrantFiled: June 4, 1999Date of Patent: April 17, 2001Assignee: Agency of Industrial Science and TechnologyInventors: Hideo Ihara, Masayuki Hirabayashi, Akira Iyo
-
Patent number: 5919735Abstract: A high temperature superconductor which has a layered crystal structure, which has a superconducting transition temperature, Tc, of 110 K or more, and which has a composition expressed by:Cu.sub.1-z M'.sub.z Ae.sub.2 Ca.sub.x-1 Cu.sub.x O.sub.y,where M' is at least one element selected from the group consisting of (a) trivalent ions of Tl, and (b) polyvalent ions of Mo, W, and Re,where Ae is at least one of Ba and Sr,where x ranges from 1 to 10,where y ranges from 2x+1 to 2x+4, andwhere z ranges from 0<z.ltoreq.0.5.Type: GrantFiled: October 27, 1995Date of Patent: July 6, 1999Assignee: Agency of Industrial Science and TechnologyInventors: Hideo Ihara, Akira Iyo
-
Patent number: 5455224Abstract: A method for producing a compound oxide superconducting thin film, comprising forming an oxide thin film on the surface of a substrate of a first metal element having a redox charge by oxidizing the metal, using the oxide thin film thus formed as an electrode for oxidation reaction of a second metal element contained in an electrolyte solution or molten salt to incorporate the second metal element in the oxide thin film, using the compound oxide thin film thus formed as an electrode to obtain a cyclic voltammogram, and electrochemically processing the compound oxide thin film at an electrolytic potential that is determined based on the cyclic voltammogram.Type: GrantFiled: March 24, 1994Date of Patent: October 3, 1995Assignees: Agency of Industrial Science & Technology, Ministry of International Trade & IndustryInventors: Hiroko Kaneko, Keiji Kaneko, Hideo Ihara, Akira Negishi, Shoji Ishibashi
-
Patent number: 5344779Abstract: A method for the production of a standard oxide sample for X-ray fluorescence analysis of an impurity element contained in an inorganic compound. The standard oxide sample is produced by accurately weighing a high-purity compound of the type of the main-component element of the inorganic compound, dissolving the weighed compound in an acid, adding an element of the type of the impurity element to be subjected to determination in a prescribed amount to the acid solution, evaporating the resultant solution to dryness, and heating the dry residue of evaporation.Type: GrantFiled: March 22, 1993Date of Patent: September 6, 1994Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & IndustryInventors: Keiji Kaneko, Masayuki Hirabayashi, Hideo Ihara, Hiroko Kaneko
-
Patent number: 5286711Abstract: A method for producing an oxide superconductor comprises obtaining a cyclic voltammogram using an oxide material containing an element having a redox charge as an electrode, determining an electrolytic potential for the oxide material on the basis of the voltammogram, and electrolyzing the oxide material at the determined potential.Type: GrantFiled: March 23, 1992Date of Patent: February 15, 1994Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & IndustryInventors: Hiroko Kaneko, Keiji Kaneko, Hideo Ihara, Akira Negishi
-
Patent number: 5112783Abstract: Cubic conductive copper oxide ceramics which are represented by the following formula I:(M.sub.x Cu.sub.y).sub.7 O.sub.z A.sub.w Iwherein M represents at least one element selected from the group consisting of In, Sc, Y, Tl, and Ga, A represents Cl, NO.sub.3, or Cl and NO.sub.3, x+Y is a value of 1, x/y is a number of 0 to 10, z is a number of from 6 to 8, and w is a number of from 1 to 9, and processes for producing same by mixing at least one nitrate and/or chloride of a metal selected from the group consisting of In, Sc, Y, Tl, and Ga, with copper nitrate and/or copper chloride, and firing the mixture at from 200.degree. to 600.degree. C. The copper oxide ceramics are preferably used as electrodes in various fields, heat emiters and also as a material for producing superconductors.Type: GrantFiled: January 14, 1991Date of Patent: May 12, 1992Assignees: Ube Industries, Ltd., Agency of Industrial Science and TechnologyInventors: Ryoji Sugise, Hiroshi Daimon, Itsuhiro Fujii, Hideo Ihara, Norio Terada, Masatoshi Jo, Masayuki Hirabayashi