Abstract: An SiC semiconductor device includes a substrate, a drift layer disposed on a first surface of the substrate, a base region disposed above the drift layer, a source region disposed above the base region, a trench penetrating the source region and the base region to the drift layer, a gate insulating layer disposed on a surface of the trench, a gate electrode disposed on a surface of the gate insulating layer, a first electrode electrically coupled with the source region and the base region, a second electrode disposed on the second surface of the substrate, and a second conductivity-type layer disposed at a portion of the base region located under the source region. The second conductivity-type layer has the second conductivity type and has an impurity concentration higher than the base region.

Abstract: A silicon carbide semiconductor device includes a substrate, a drift layer located on a first surface of the substrate, a base region located on the drift layer, a source region located on the base region, a trench penetrating the source region and the base region to the drift layer, a channel layer located in the trench, a gate insulating layer located on the channel layer, a gate electrode located on the gate insulating layer, a source electrode electrically coupled with the source region and the base region, a drain electrode located on a second surface of the substrate, and a deep layer. The deep layer is located under the base region, extends to a depth deeper than the trench and is formed along an approximately normal direction to a sidewall of the trench.

Abstract: To provide a circuit device freed from constrains of a mounting direction. The circuit device according to the present invention includes: a conductive pattern for forming a die pad, a first bonding pad, and a second bonding pad; and a semiconductor element (TR) attached to the conductive pattern. The circuit device further includes: a sealing resin for covering the semiconductor element (TR) and the conductive pattern with a rear surface of the conductive pattern being exposed; and a coating resin for covering the rear surface of the conductive pattern exposed from the sealing resin. The rear surface of the conductive pattern is exposed from openings of the coating resin, and the openings are arranged with rotational symmetry about a central point of the circuit device.

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

Abstract: To provide a circuit device freed from constrains of a mounting direction. The circuit device according to the present invention includes: a conductive pattern for forming a die pad, a first bonding pad, and a second bonding pad; and a semiconductor element (TR) attached to the conductive pattern. The circuit device further includes: a sealing resin for covering the semiconductor element (TR) and the conductive pattern with a rear surface of the conductive pattern being exposed; and a coating resin for covering the rear surface of the conductive pattern exposed from the sealing resin. The rear surface of the conductive pattern is exposed from openings of the coating resin, and the openings are arranged with rotational symmetry about a central point of the circuit device.

Abstract: Signals received from mobile station by respective slave units each are attenuated by a combination of attenuation factors set for the respective slave units, the attenuated signals thereafter are combined into a resultant signal in master unit, and the combination of attenuation factors is changed based on a predetermined rule. Then information about magnitudes of powers of signals received from the mobile station by the respective slave units is acquired based on change of information about a power of the resultant signal occurring with change in the combination of attenuation factors. At this time, the signal received from the mobile station by each slave unit increases its power with decreasing distance of the slave unit to the mobile station; therefore, distances from the mobile station to the respective slave units are estimated based on the information about the magnitudes of the powers, and the location of the mobile station is suitably estimated thereby.

Abstract: In a charge control circuit comprising a full charge detection voltage supply device supplying a predetermined full charge detection voltage for detecting a full charge status; and a comparator including a charge status voltage input unit to which is inputted a charge status voltage indicative of the charge status of a secondary battery and a full charge detection voltage input unit to which the full charge detection voltage is inputted, the comparator outputting a result of a comparison between the charge status voltage and the full charge detection voltage, the charge control circuit further comprises an external terminal connected to the full charge detection voltage input unit of the comparator and for adjusting the full charge detection voltage, with an electronic component for adjusting the full charge detection voltage being connectable to the external terminal.

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

Abstract: In mobile communication system 100 according to the present invention, mobile station 1 is camped on cell C10 established by base station B10. In the cell C10, there exist indoor cells C11-C13 and outdoor cells C21, C22 as neighboring cells. Mobile station 1 measures received levels of cells C10-C13, C21, C22 and determines cell types of the respective cells, i.e., whether each cell is an indoor cell or not, based on broadcast information M1. Mobile station 1 selects a cell as a reselection target on the basis of the received levels and cell types.

Abstract: In a charge control circuit comprising a full charge detection voltage supply device supplying a predetermined full charge detection voltage for detecting a full charge status; and a comparator including a charge status voltage input unit to which is inputted a charge status voltage indicative of the charge status of a secondary battery and a full charge detection voltage input unit to which the full charge detection voltage is inputted, the comparator outputting a result of a comparison between the charge status voltage and the full charge detection voltage, the charge control circuit further comprises an external terminal connected to the full charge detection voltage input unit of the comparator and for adjusting the full charge detection voltage, with an electronic component for adjusting the full charge detection voltage being connectable to the external terminal.

Abstract: Signals received from mobile station by respective slave units each are attenuated by a combination of attenuation factors set for the respective slave units, the attenuated signals thereafter are combined into a resultant signal in master unit, and the combination of attenuation factors is changed based on a predetermined rule. Then information about magnitudes of powers of signals received from the mobile station by the respective slave units is acquired based on change of information about a power of the resultant signal occurring with change in the combination of attenuation factors. At this time, the signal received from the mobile station by each slave unit increases its power with decreasing distance of the slave unit to the mobile station; therefore, distances from the mobile station to the respective slave units are estimated based on the information about the magnitudes of the powers, and the location of the mobile station is suitably estimated thereby.

Abstract: A planar array antenna comprises a plurality of antenna elements disposed in a predetermined matrix pattern. Feeders extend from a feed to the antenna elements. High-frequency switches cooperatively open or close the feeders connected to antenna elements of at least one row of the matrix pattern located at both a right-end and a left-end regions of an antenna surface. Switching signals are supplied to the high-frequency switches from switching terminals for alternately activating the associated antenna elements, thereby providing two time-divisional array antennas offset in position by a distance corresponding to the width of at least one row of the antenna elements controlled.

Abstract: An SR (Selective Repeat) ARQ system with limited buffer memory is realized by modifying a part of a user data area. A transmitter side modifies a part of a user data area in a data frame so that it differs at least one bit from corresponding part of a frame with the same frame number as that of a current frame in a preceding modulo turn, and a receiver side compares said part of a user data area with corresponding part of a frame with the same frame number as that of a current frame in a preceding modulo turn. When they coincide, the receiver side disregards the received frame as it is re-transmitted frame which is already received correctly, and when they do not coincide, the receiver side takes the received frame. Preferably, said part of a user data area is the last word area in a user data area in a frame structure.

Abstract: A torque sensor comprising a magnetic amorphous film whose magnetostrictive characteristics vary with the amount of torque applied thereto and coils for detecting magnetostrictive variation disposed opposite the magnetic member. The torque sensor is constituted as an independent unit separate from the shaft whose torque is to be measured. The independent unit comprises a tubular or a shaft member having the magnetic amorphous film attached thereto and a housing with the coils at its inner wall. The housing covers the tubular or shaft member and is rotatable about the same axis as the member. The tubular member is easily mounted on the shaft through spline fittings in one embodiment and the short shaft member of the other embodiment is easily mounted between the two shaft ends via spline fittings and flange couplings.

Abstract: A torque sensor comprising a magnetic amorphous film whose magnetostrictive characteristics vary with the amount of torque applied thereto and coils for detecting magnetostrictive variation disposed opposite the magnetic member. The torque sensor is constituted as an independent unit separate from the shaft whose torque is to be measured. The independent unit comprises a tubular or a shaft member having the magnetic amorphous film attached thereto and a housing with the coils at its inner wall. The housing covers the tubular or shaft member and is rotatable about the same axis as the member. The tubular member is easily mounted on the shaft through spline fittings in one embodiment and the short shaft member via spline fittings and flange couplings.

Abstract: A torque sensor comprising a magnetic amorphous film whose magnetostrictive characteristics vary with the amount of torque applied thereto and coils for detecting magnetostrictive variation disposed opposite the magnetic film and is detachably coupled with a shaft whose torque is to be measured. The shaft is cut into two halves and the unit has flange couplings connected to the one half of the shaft while receiving the other shaft half at its boss. The boss is elongated to form a tubular portion on which said magnetic film is affixed and an enclosure member houses the tubular portion. The coils are attached on the inner wall of the enclosure member to keep a distance from the film affixed on the tubular portion.

Abstract: Antibiotics Y-16482 .alpha. and/or Y-16482 .beta., obtained by cultivating a strain belonging to the genus Pseudomonas and capable of producing Y-16482, process of producing either or both of them, and a pharmaceutical composition containing these compounds. Antibiotics Y-16482 .alpha. and/or Y-16482 .beta. show an antibacterial activity to gram-positive and gram-negative bacteria and indicate an antitumor activity to experimental tumors.

Abstract: Thiophene derivatives of the formula: ##SPC1##Wherein R.sup.1 is H or CH.sub.3 ; R.sup.2 is CH.sub.3 or C.sub.2 H.sub.5, or R.sup.1 and R.sup.2 combinedly represent --(CH.sub.2).sub.4 --; each of R.sup.3 and R.sup.4 is H, alkyl of from 1 to 4 carbon atoms or cyclohexyl, or R.sup.3 and R.sup.4 together with the adjacent nitrogen atom form 1-pyrrolidinyl, piperidino, 4-methyl-1-piperazinyl or morpholino; X is H, halogen or OCH.sub.3 ; A is -CH= or --C(CH.sub.3)=, and B is =N-- or =CH--; or A is --C(CH.sub.2 OH)= or --N=, and B is =N--, and pharmaceutically acceptable acid addition salts thereof possess excellent pharmacological properties such as sedative, anxiolytic and anticonvulsant effects and protective effects against hypoxia or anoxia.