Abstract: An adhesive composition, including: a reaction product (A) among a bifunctional epoxy resin represented by the formula (2), a tri- or more functional epoxy resin represented by the formula (3), and a saturated acid anhydride represented by the following general formula (4); a UV-sensitive reaction initiator (B); and a dilution solvent (C), wherein the component (A) is a compound represented by the formula (1), a ratio of a total mole of epoxy groups in the multi-functional epoxy resin to a mole of the saturated acid anhydride is 1.30 to 3.00, and a mole of the bifunctional epoxy resin relative to a total mole of the multi-functional epoxy resin is 0.001 to 0.15. This provides a highly reliable epoxy-resin-based adhesive composition and film-shaped sealing material having a low viscosity, curability at low temperature, and high adhesiveness, and retaining power generation performance of a perovskite solar cell before and after sealing.

Abstract: A microstructure-transfer stamp component including a substrate and a silicone-based rubber film formed on the substrate, wherein a surface of the silicone-based rubber film facing away from the substrate has one or more recesses each being closed except for a surface opening. This provides a microstructure-transfer stamp component that can optimize temporary adhesive strength of the surface of the silicone-based rubber film stamp in a short period of time.

Abstract: A method for producing a light emitting diode supply substrate for transferring a plurality of light emitting diodes to a supply destination, including: a first mounting step of mounting a plurality of light emitting diodes on a supply substrate; a selective removal step of selectively removing defective light emitting diodes on the supply substrate, and a second mounting step of transferring a normal light emitting diode to a position where the defective light emitting diode has been arranged on the supply substrate. Thus, a method produces a light emitting diode supply substrate capable of producing a light emitting diode supply substrate capable of transferring a plurality of normal light emitting diodes to a supply destination.

Abstract: A stamp head unit including: a stamp component including at least a silicone-based rubber film on a quartz glass substrate; a stamp-component-holding component including a surface having a hole for vacuum suction of a surface of the quartz glass substrate of the stamp component; and a tubular component having an evacuation suction hole connected to communicate with the hole for vacuum suction so as to maintain a vacuum, and being coupled and fixed with the stamp-component-holding component. This provides: a stamp component that can be fixed stably by a simple and convenient vacuum chuck system; a stamp head unit with which the stamp component can be replaced in a short time; and a microstructure-transfer apparatus provided with the stamp component and the stamp head unit.

Abstract: A hard mask film 2 provided on substrate 1 is formed by tin-containing chromium-containing material. In the chromium-containing material including tin, which forms the hard mask film 2, the etching resistance to fluorine-containing dry etching is equal to or higher than the etching resistance of the tin-free chromium-containing material, and it shows a significantly high etching rate as compared with a chromium-containing material free of tin under conditions for chlorine-containing dry etching. As a result, the time for chlorine-containing dry etching is shortened, and damage to a resist pattern is reduced. Thus, high-precision pattern transfer can be performed. The present invention provides a novel technique for increasing etching process-ability by increasing a dry-etching rate of a hard mask film made of a chromium-containing material while assuring a hard mask function of the hard mask film.

Abstract: An inorganic material film containing tin within the concentration range of 0.1 atomic percent or higher but no higher than 11.5 atomic percent eliminates the problem in which tin localizes and forms into particles, with the result that these particles turn into defects in an optical film. An inorganic material film for a photomask blank according to the present invention film-formed by sputtering and composed of a chromium-containing material includes a light-shielding layer having electrical conductivity, wherein the light-shielding layer contains 0.1 atomic percent or higher but no higher than 11.5 atomic percent of tin and no higher than 15 atomic percent of oxygen. The lower limit of oxygen concentration is, for example, 3 atomic percent. The inorganic material film has electrical conductivity, which is preferably no higher than 5000 ?/cm2 when evaluated in terms of resistance values.

Abstract: The method for manufacturing a photomask blank according to the present invention, when manufacturing a photomask blank having at least one functional layer on a transparent substrate, in a step of film-formation of such a functional film where the functional film includes a chromium-containing element and an a metallic element that is capable of bringing a mixture of the metallic element and the chromium into a liquid phase at a temperature of 400° C. or lower, a chromium target (target A) and a target (target B) mainly containing at least one kind of the metallic element are simultaneously sputtered (co-sputtered). The present invention provides a technique for manufacturing a functional film having a small variation in its characteristics such as optical density and a low detect, and showing a high etching rate.

Abstract: A photomask blank comprising a transparent substrate and a chromium-containing film deposited thereon is provided. The chromium-containing film comprises at least one CrC compound layer comprising up to 50 at % of Cr, at least 25 at % of O and/or N, and at least 5 at % of C. From the blank, a photomask having a photomask pattern formed on the substrate is produced, the photomask being used in photolithography of forming a resist pattern with a line width of up to 0.1 ?m, using exposure light having a wavelength of up to 250 nm.

Abstract: An inorganic material film containing tin within the concentration range of 0.1 atomic percent or higher but no higher than 11.5 atomic percent eliminates the problem in which tin localizes and forms into particles, with the result that these particles turn into defects in an optical film. An inorganic material film for a photomask blank according to the present invention film-formed by sputtering and composed of a chromium-containing material includes a light-shielding layer having electrical conductivity, wherein the light-shielding layer contains 0.1 atomic percent or higher but no higher than 11.5 atomic percent of tin and no higher than 15 atomic percent of oxygen. The lower limit of oxygen concentration is, for example, 3 atomic percent. The inorganic material film has electrical conductivity, which is preferably no higher than 5000?/cm2 when evaluated in terms of resistance values.

Abstract: A hard mask film 2 provided on substrate 1 is formed by tin-containing chromium-containing material. In the chromium-containing material including tin, which forms the hard mask film 2, the etching resistance to fluorine-containing dry etching is equal to or higher than the etching resistance of the tin-free chromium-containing material, and it shows a significantly high etching rate as compared with a chromium-containing material free of tin under conditions for chlorine-containing dry etching. As a result, the time for chlorine-containing dry etching is shortened, and damage to a resist pattern is reduced. Thus, high-precision pattern transfer can be performed. The present invention provides a novel technique for increasing etching process-ability by increasing a dry-etching rate of a hard mask film made of a chromium-containing material while assuring a hard mask function of the hard mask film.

Abstract: In the chromium-containing material film of the present invention, an element is added thereto and is capable of bringing a mixture of the element and the chromium into a liquid phase at a temperature of 400° C. or lower. The use of such a chromium-containing material film as an optical film (e.g., a light-shielding film, an etching mask film, or an etching stopper film) of a photo mask blank can achieve an improvement in chlorine-dry etching while retaining the same optical characteristics and the like as those of the conventional chromium-containing material film, thereby increasing the patterning precision.

Abstract: A hard mask film 2 provided on substrate 1 is formed by tin-containing chromium-containing material. In the chromium-containing material including tin, which forms the hard mask film 2, the etching resistance to fluorine-containing dry etching is equal to or higher than the etching resistance of the tin-free chromium-containing material, and it shows a significantly high etching rate as compared with a chromium-containing material free of tin under conditions for chlorine-containing dry etching. As a result, the time for chlorine-containing dry etching is shortened, and damage to a resist pattern is reduced. Thus, high-precision pattern transfer can be performed. The present invention provides a novel technique for increasing etching process-ability by increasing a dry-etching rate of a hard mask film made of a chromium-containing material while assuring a hard mask function of the hard mask film.

Abstract: The purpose of the present invention is to further reliably reduce the contamination of photomask blanks due to the adherence of the dust and particles generated during the storage, transportation, or operation of the container while suppressing the effect on a resist pattern, thereby improving the quality and yield of the photomask blanks. The present invention pertains to a container (1) for storing photomask blanks that stores, transports, or safeguards photomask blanks (2), wherein at least one of the components is constituted by a thermoplastic resin where the amount of caprolactam measured by the dynamic head space method when kept for 60 minutes at 40° C. is 0.01 ppm or less n-decane conversion amount per resin weight, and the surface resistance value is no more than 1.0E+13 ohms.

Abstract: A light-shielding film 2 is formed on a transparent substrate 1. A hard mask film 3 is formed on this light-shielding film 2. The entire hard mask film 3 is made of a chromium-containing material including tin. The film made a chromium-containing material including tin can cause a significant increase in the etching rate at the time of chlorine-containing dry etching. Furthermore, comparing with a film made of a chromium-containing material in which part of chromium is replaced with a light element, the above film has an equal or higher level of etching resistance to fluorine-dry etching. Thus, burden on a photoresist at the time of etching the chromium-containing material film can be reduced. Therefore, high-precision pattern transfer can be performed even in the case that the resist film is thinned.

Abstract: A light-shielding film 2 formed on a transparent substrate 1 has a monolayer structure or a multilayer structure. At least one layer is formed by film-formation with a chromium-containing material including tin. The light-shielding film 2 has an optical density of 2 or higher and 4 or lower and has a reflection-preventing function. The layer made of a chromium-containing material including tin, which constitutes the light-shielding film 2, can cause a significant increase in the etching rate at the time of chlorine-containing dry etching including oxygen. Thus, burden on the resist pattern or hard mask pattern at the time of transferring a pattern on the light-shielding film is reduced, and therefore it is possible to carry out pattern transfer with high precision.

Abstract: A half-tone phase shift film 2 and a light-shielding film 3 are stacked on transparent substrate 1. The light-shielding film 3 has a monolayer structure or a multilayer structure. At least one layer is formed by film-formation with a chromium-containing material including tin. The half-tone phase shift film 2 is made of a molybdenum silicon nitride oxide. The layer made of a chromium-containing material including tin can cause a significant increase in the etching rate at the time of chlorine-containing dry-etching including oxygen. Thus, burden on the resist pattern or hard mask pattern at the time of transferring a pattern on the light-shielding film is reduced, and therefore it is possible to carry out pattern transfer with high precision. The present invention provides a novel technique that can increase a dry-etching rate of a light-shielding film made of a chromium-containing material while assuring various characteristics required for the light-shielding film.

Abstract: In the chromium-containing material film of the present invention, an element is added thereto and is capable of bringing a mixture of the element and the chromium into a liquid phase at a temperature of 400° C. or lower. The use of such a chromium-containing material film as an optical film (e.g., a light-shielding film, an etching mask film, or an etching stopper film) of a photo mask blank can achieve an improvement in chlorine-dry etching while retaining the same optical characteristics and the like as those of the conventional chromium-containing material film, thereby increasing the patterning precision.

Abstract: A photomask blank comprising a transparent substrate and a chromium-containing film deposited thereon is provided. The chromium-containing film comprises at least one CrC compound layer comprising up to 50 at % of Cr, at least 25 at % of O and/or N, and at least 5 at % of C. From the blank, a photomask having a photomask pattern formed on the substrate is produced, the photomask being used in photolithography of forming a resist pattern with a line width of up to 0.1 ?m, using exposure light having a wavelength of up to 250 nm.

Abstract: A film is sputter deposited on a substrate by providing a vacuum chamber (3) with first and second targets (1, 2) such that the sputter surfaces (11, 21) of the first and second targets (1, 2) may face the substrate (5) and be arranged parallel or oblique to each other, simultaneously supplying electric powers to the first and second targets (1, 2), and depositing sputtered particles on the substrate while controlling sputtering conditions such that the rate at which sputtered particles ejected from one target reach the sputter surface of the other target and deposit thereon is not more than the rate at which the sputtered particles are removed from the other target by sputtering.

Abstract: A power supply device includes: a main power supply configured to feed power to a load with constant-voltage output using an external power supply; an auxiliary power supply configured to feed power to the load using an internal power storage unit; a constant-current/constant-voltage switching power supply configured to feed a part of current flowing through the load by which part the current exceeds an upper limit value of output current of the main power supply instructed by a current upper-limit instruction unit, with the constant-current output from the auxiliary power supply; and an output switching unit switching the constant-current/constant-voltage switching power supply from the constant-current output to the constant-voltage output when a power cut monitoring unit determines stop of power supply from the external power supply.