Patents by Inventor Hideo Ohtsuka

Hideo Ohtsuka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4575466
    Abstract: A process for preparing a semiconductor wafer having one region including impurities at a concentration of more than 5.times.10.sup.16 cm.sup.-3 therein, in which an energy beam is radiated onto this one region of the semiconductor wafer in order to form small defects therein and out diffuse the impurities, respectively. Thereby, a region including no small defects is formed in a surface region of the semiconductor wafer and another region including many defects is formed in an internal region of the semiconductor wafer.
    Type: Grant
    Filed: December 28, 1983
    Date of Patent: March 11, 1986
    Assignee: Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Hiroshi Iwai, Hideo Ohtsuka