Abstract: A coating composition containing a solvent and a coating agent having an ionizing radiation-curable compound as a principal component thereof, wherein under the following condition for the concentration a (wt %) of the coating agent in the coating composition 0<a?60, the concentration a of the coating agent and the surface tension b (dyne/cm) of the coating composition satisfy the following relationship b?(?a/15)+26, is applied onto a surface of a protective film 11 and curing is carried out to form a hard coating layer 12. Even in the case that projections or foreign bodies are present on the surface of the protective film 11, the hard coating layer 12 can conceal these and hence can have high surface smoothness.

Abstract: A coating composition containing a solvent and a coating agent having an ionizing radiation-curable compound as a principal component thereof, wherein under the following condition for the concentration a (wt %) of the coating agent in the coating composition 0<a?60, the concentration a of the coating agent and the surface tension b (dyne/cm) of the coating composition satisfy the following relationship b?(?a/15)+26, is applied onto a surface of a protective film 11 and curing is carried out to form a hard coating layer 12. Even in the case that projections or foreign bodies are present on the surface of the protective film 11, the hard coating layer 12 can conceal these and hence can have high surface smoothness.

Abstract: A sheet to form a protective film for chips includes a release sheet and a protective film forming layer formed on a detachable surface of the release sheet. The protective film forming layer includes a thermosetting and/or energy ray-curable component and a binder polymer component.

Abstract: A sheet to form a protective film for chips includes a release sheet and a protective film forming layer formed on a detachable surface of the release sheet. The protective film forming layer includes a thermosetting and/or energy ray-curable component and a binder polymer component.

Abstract: One side of a substrate film 11 is coated with a coating composition containing (A) a reactive particle produced by chemically bonding an organic compound having at least one polymerizable unsaturated group in its molecule to an inorganic oxide particle, (B) a monomer or oligomer of an organic compound having at least two polymerizable unsaturated groups in its molecule, (C) an organic compound with a weight average molecular weight of at least 1500 and having at least one polymerizable unsaturated group in its molecule, and, if desired, (D) a siloxane compound having a dimethylsiloxane skeleton, and the coating composition is cured by irradiation with ionizing radiation to form a hard coat layer 12 with a thickness of 2 to 20 ?m. This provides a hard coat film having adequate surface hardness and suppressed warpage.

Abstract: A semiconductor wafer protection structure including a semiconductor wafer and a protective sheet overlaid on a circuit surface of the semiconductor wafer, wherein the protective sheet has a larger diameter than the outer diameter of the semiconductor wafer. Semiconductor wafer protection structures and methods, and laminated protective sheet for use therein are provided and enable prevention of damage to a wafer during grinding and transportation when the wafer is ground to an ultrathin thickness and transported. Also provided is a process for processing a semiconductor wafer whereby damage to the wafer can be reduced during application and cutting of an adhesive sheet.

Abstract: A process for producing semiconductor chips having a protective film on the back surface includes the steps of: providing a sheet to form the protective film having a release sheet and a protective film-forming layer formed on a detachable surface of the release sheet, wherein the protective film-forming layer includes a thermosetting component, an energy ray-curable component and a binder polymer component; adhering a protective film-forming layer of the sheet to form the protective film onto a back surface of a semiconductor wafer having circuits on its surface; curing the protective film-forming layer by irradiation with an energy ray, and thereafter, further conducting the additional steps of (in any order): detaching the release sheet from the protective film-forming layer; further curing the protective film-forming layer by heating; and dicing the semiconductor wafer together with the protective film-forming layer with respect to each circuit.

Abstract: A process for producing a resin-sealed semiconductor device having high reliability which is produced more easily and efficiently without voids, the process comprising the steps of: (a) providing a semiconductor wafer having circuits on a surface; (b) applying a resin sheet composed of a support and an adhesive resin layer releasable from the support, on the circuit surface of the semiconductor wafer, and fixing an outer periphery of the resin sheet with a ring frame; (c) cutting the semiconductor wafer and the resin layer by each circuit to form chips; (d) picking up each chip together with the resin layer from the support; (e) mounting each chip on a predetermined position of a chip mounting substrate through the resin layer; and (f) firmly bonding the chip on the chip mounting substrate so as to achieve conduction between the chip and the chip mounting substrate.

Abstract: An adhesive tape comprising a base and, superimposed thereon, an adhesive layer, this adhesive layer comprising an adherent component (A), an epoxy resin (B), a thermally active latent epoxy resin curing agent (C), an energy radiation polymerizable compound (D) and a photopolymerization initiator (E), wherein either or both of the epoxy resin (B) and energy radiation polymerizable compound (D) have a dicyclopentadiene skeleton in its molecule or molecules thereof. The resultant adhesive tape has an adhesive layer which provides reduced water absorption of an adhesive curing product and which enables a lowering of the elastic modulus thereof during thermocompression bonding.

Abstract: A semiconductor wafer protection structure including a semiconductor wafer and a protective sheet overlaid on a circuit surface of the semiconductor wafer, wherein the protective sheet has a larger diameter than the outer diameter of the semiconductor wafer. Semiconductor wafer protection structures and methods, and laminated protective sheet for use therein are provided and enable prevention of damage to a wafer during grinding and transportation when the wafer is ground to an ultrathin thickness and transported. Also provided is a process for processing a semiconductor wafer whereby damage to the wafer can be reduced during application and cutting of an adhesive sheet.

Abstract: A coating composition containing a solvent and a coating agent having an ionizing radiation-curable compound as a principal component thereof, wherein under the following condition for the concentration a (wt %) of the coating agent in the coating composition 0<a?60, the concentration a of the coating agent and the surface tension b (dyne/cm) of the coating composition satisfy the following relationship b?(?a/15)+26, is applied onto a surface of a protective film 11 and curing is carried out to form a hard coating layer 12. Even in the case that projections or foreign bodies are present on the surface of the protective film 11, the hard coating layer 12 can conceal these and hence can have high surface smoothness.

Abstract: A process for producing semiconductor chips having a protective film on the back surface includes the steps of: providing a sheet to form the protective film having a release sheet and a protective film-forming layer formed on a detachable surface of the release sheet, wherein the protective film-forming layer includes a thermosetting component, an energy ray-curable component and a binder polymer component; adhering a protective film-forming layer of the sheet to form the protective film onto a back surface of a semiconductor wafer having circuits on its surface; curing the protective film-forming layer by irradiation with an energy ray, and thereafter, further conducting the additional steps of (in any order): detaching the release sheet from the protective film-forming layer; further curing the protective film-forming layer by heating; and dicing the semiconductor wafer together with the protective film-forming layer with respect to each circuit.

Abstract: A sheet to form a protective film for chips includes a release sheet and a protective film forming layer formed on a detachable surface of the release sheet. The protective film forming layer includes a thermosetting and/or energy ray-curable component and a binder polymer component.

Abstract: The present invention provides a sheet to form a protective film for chips, which can be readily formed into a highly uniform protective film on a back surface of chip, and which, even if minute scratches are formed on the back surface of chip as a result of mechanical grinding, can eliminate adverse effects resulting from the scratches. The sheet to form a protective film for chips of the present invention comprises a release sheet and a protective film forming layer formed on a detachable surface of the release sheet, wherein said protective film forming layer comprises a thermosetting or energy ray-curable component and a binder polymer component.

Abstract: One side of a substrate film 11 is coated with a coating composition containing (A) a reactive particle produced by chemically bonding an organic compound having at least one polymerizable unsaturated group in its molecule to an inorganic oxide particle, (B) a monomer or oligomer of an organic compound having at least two polymerizable unsaturated groups in its molecule, (C) an organic compound with a weight average molecular weight of at least 1500 and having at least one polymerizable unsaturated group in its molecule, and, if desired, (D) a siloxane compound having a dimethylsiloxane skeleton, and the coating composition is cured by irradiation with ionizing radiation to form a hard coat layer 12 with a thickness of 2 to 20 ?m. This provides a hard coat film having adequate surface hardness and suppressed warpage.

Abstract: A process for producing a resin-sealed semiconductor device having high reliability which is produced more easily and efficiently without voids, the process comprising the steps of: (a) providing a semiconductor wafer having circuits on a surface; (b) applying a resin sheet composed of a support and an adhesive resin layer releasable from the support, on the circuit surface of the semiconductor wafer, and fixing an outer periphery of the resin sheet with a ring frame; (c) cutting the semiconductor wafer and the resin layer by each circuit to form chips; (d) picking up each chip together with the resin layer from the support; (e) mounting each chip on a predetermined position of a chip mounting substrate through the resin layer; and firmly bonding the chip on the chip mounting substrate so as to achieve conduction between the chip and the chip mounting substrate.

Abstract: A resin tie bar 1A is formed from a base material 10, 11 of a heat-resistant resin whose melting point is higher than the temperature during resin molding and an insulative adhesive layer 12 on the base material 10, 11 and formed from an insulative adhesive agent that may or may not be removable prior to resin molding depending upon its composition. The resin tie bar 1A is applied to the surface of the leads 22 of a lead frame, and resin molding is then performed, during which the resin tie bar 1A is pressed by a heated mold 3, which softens the insulative adhesive agent of the resin tie bar 1A and pushes it into the gaps 23 between the leads 22 of the lead frame. Thus the resin tie bar 1A can be easily formed into a shape that is favorable for the leads 22 of the lead frame.

Abstract: An adhesive tape comprising a base and, superimposed thereon, an adhesive layer, this adhesive layer comprising an adherent component (A), an epoxy resin (B), a thermally active latent epoxy resin curing agent (C), an energy radiation polymerizable compound (D) and a photopolymerization initiator (E), wherein either or both of the epoxy resin (B) and energy radiation polymerizable compound (D) have a dicyclopentadiene skeleton in its molecule or molecules thereof. The resultant adhesive tape has an adhesive layer which provides reduced water absorption of an adhesive curing product and which enables a lowering of the elastic modulus thereof during thermocompression bonding.

Abstract: Reinforcing material having Rockwell hardness of 60 or above and comprising base material and adhesive is formed, and then the reinforcing material is attached to one side of silicon wafer on which circuits are not formed prior to dicing.

Abstract: A process for producing a semiconductor device, including the steps of forming grooves of a cut depth smaller than the thickness of a wafer; sticking a surface protective sheet onto the wafer surface; grinding the back of the wafer to divide the wafer into individual chips; adhering a dicing/die bond sheet onto the back of the wafer; peeling the surface protective sheet from the wafer surface to thereby expose the adhesive layer of the dicing/die bond sheet through each space between individual chips; cutting the dicing/die bond sheet; detaching the individual chips from the base of the dicing/die bond sheet; and bonding the individual chips through the adhesive layer of the dicing/die bond sheet to a given substrate.