Abstract: A thin film is provided that primarily comprises titanium oxide and includes Ti, Ag and O. The thin film contains 29.6 at % or more and 34.0 at % or less of Ti, 0.003 at % or more and 7.4 at % or less of Ag, and oxygen as the remainder thereof and has a ratio of oxygen to metals, O/(2Ti+0.5Ag), of 0.97 or more. The thin film has a high refractive index and a low extinction coefficient. In addition, the thin film has superior transmittance, minimally deteriorates in reflectance, and is useful as an interference film or a protective film for an optical information recording medium. The film may also be applied to a glass substrate to provide a heat reflective film, an antireflective film, or an interference filter. A method of producing the thin film is also disclosed.

Abstract: Provided is a sputtering target which can lower a heat treatment temperature for ordering a Fe—Pt magnetic phase and can suppress generation of particles during sputtering. The sputtering target is a nonmagnetic material-dispersed sputtering target containing Fe, Pt and Ge. The sputtering target includes at least one magnetic phase satisfying a composition represented by (Fe1-?Pt?)1-?Ge?, as expressed in an atomic ratio for Fe, Pt and Ge, in which ? and ? represent numbers meeting 0.35???0.55 and 0.05???0.2, respectively. The magnetic phase has a ratio (SGe30mass %/SGe) of 0.5 or less. The ratio (SGe30mass %/SGe) is an average area ratio of Ge-based alloy phases containing a Ge concentration of 30% by mass or more (SGe30mass %) to an area ratio of Ge (SGe) calculated from the entire composition of the sputtering target, in element mapping by EPMA of a polished surface obtained by polishing a cross section perpendicular to a sputtering surface of the sputtering target.

Abstract: A thin film is provided that primarily comprises titanium oxide and includes Ti, Ag and O. The thin film contains 29.6 at % or more and 34.0 at % or less of Ti, 0.003 at % or more and 7.4 at % or less of Ag, and oxygen as the remainder thereof and has a ratio of oxygen to metals, O/(2Ti+0.5Ag), of 0.97 or more. The thin film has a high refractive index and a low extinction coefficient. In addition, the thin film has superior transmittance, minimally deteriorates in reflectance, and is useful as an interference film or a protective film for an optical information recording medium. The film may also be applied to a glass substrate to provide a heat reflective film, an antireflective film, or an interference filter. A method of producing the thin film is also disclosed.

Abstract: Provided is a sputtering target which can lower a heat treatment temperature for ordering a Fe—Pt magnetic phase and can suppress generation of particles during sputtering. The sputtering target is a nonmagnetic material-dispersed sputtering target containing Fe, Pt and Ge. The sputtering target includes at least one magnetic phase satisfying a composition represented by (Fe1-?Pt?)1-?Ge?, as expressed in an atomic ratio for Fe, Pt and Ge, in which ? and ? represent numbers meeting 0.35???0.55 and 0.05???0.2, respectively. The magnetic phase has a ratio (SGe30mass%/SGe) of 0.5 or less. The ratio (SGe30mass%/SGe) is an average area ratio of Ge-based alloy phases containing a Ge concentration of 30% by mass or more (SGe30mass%) to an area ratio of Ge (SGe) calculated from the entire composition of the sputtering target, in element mapping by EPMA of a polished surface obtained by polishing a cross section perpendicular to a sputtering surface of the sputtering target.

Abstract: An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 m?·cm or less. An indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film are provided.

Abstract: Provided is a ferromagnetic material sputtering target containing a matrix phase made of cobalt, or cobalt and chromium, or cobalt and platinum, or cobalt, chromium and platinum, and an oxide phase including at least chromium oxide, wherein the ferromagnetic material sputtering target contains one or more types among Y, Mg, and Al in a total amount of 10 wtppm or more and 3000 wtppm or less, and has a relative density of 97% or higher. The provided ferromagnetic material sputtering target containing chromium oxide can maintain high density, has uniformly pulverized oxide phase grains therein, and enables low generation of particles.

Abstract: A magnetic material sputtering target characterized in that, in a plane for observing the oxide in the target, oxide grains in the target have an average diameter of 1.5 ?m or less, and that 60% or more of the oxide grains in the observing plane of the target have a difference between a maximum diameter and a minimum diameter of 0.4 ?m or less, where the maximum diameter is a maximum distance between arbitrary two points on the periphery of an oxide grain, and the minimum diameter is a minimum distance between two parallel lines across the oxide grain. A non-magnetic grain dispersion-type magnetic material sputtering target that can inhibit abnormal discharge due to an oxide causing occurrence of particles during sputtering is obtained.

Abstract: A sputtering target containing, as metal components, 0.5 to 45 mol % of Cr and remainder being Co, and containing, as non-metal components, two or more types of oxides including Ti oxide, wherein a structure of the sputtering target is configured from regions where oxides including at least Ti oxide are dispersed in Co (non-Cr-based regions), and a region where oxides other than Ti oxide are dispersed in Cr or Co—Cr (Cr-based region), and the non-Cr-based regions are scattered in the Cr-based region. An object of this invention is to provide a sputtering target for forming a granular film which suppresses the formation of coarse complex oxide grains and generates fewer particles during sputtering.

Abstract: An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering.

Abstract: An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 m?•cm or less. An indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film are provided.

Abstract: A sputtering target for a magnetic recording film containing SiO2, wherein a peak strength ratio of a (011) plane of quartz relative to a background strength (i.e. quartz peak strength/background strength) in an X-ray diffraction is 1.40 or more. An object of this invention is to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, shortening the burn-in time, magnetically and finely separating the single-domain particles after deposition, and improving the recording density.

Abstract: An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 m?·cm or less. An indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film are provided.

Abstract: Provided is a sputtering target containing SiO2 for a magnetic recording film, wherein a ratio of the peak intensity of cristobalites, which are crystallized SiO2, to the background intensity (cristobalite peak intensity/background intensity) in an X-ray diffraction is 1.40 or less. The present invention aims to obtain a sputtering target for a magnetic recording film capable of inhibiting the formation of cristobalites in the target which cause the generation of particles during sputtering, and shortening the burn-in time.

Abstract: A quaternary alloy sputtering target composed of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein a composition ratio of the respective elements is represented by a formula of CuxIn1-yGaySea (in the formula, 0.84?x?0.98, 0<y?0.5, a=(1/2)x+3/2), and a structure observed via EPMA is configured only from a Cu(In, Ga)Se2 phase without any heterogenous phase of Cu2Se or Cu(In, Ga)3Se5. Provided is a CIGS quaternary alloy sputtering target which is subject to hardly any abnormal discharge even when sputtered for a long period, which is free of any heterogenous phase of Cu2Se or Cu(In, Ga)3Se5 which causes the deterioration in the conversion efficiency of the film after being sputter-deposited, and which can produce a film having superior in-plane uniformity. Additionally provided is a CIGS quaternary alloy sputtering target having a predetermined bulk resistance and a high density.

Abstract: A sintered indium oxide comprising niobium as an additive, wherein the ratio of the number of niobium atoms relative to the total number of atoms of all metal elements contained in the sintered compact is within a range of 1 to 4%, the relative density is 98% or higher, and the bulk resistance is 0.9 m?·cm or less. Provided are a sintered compact of indium oxide system and a transparent conductive film of indium oxide system, which have characteristics of high transmittance in the short wavelength and long wavelength ranges since the carrier concentration is not too high even though the resistivity thereof is low.

Abstract: A thin film is provided that primarily comprises titanium oxide and includes Ti, Ag and O. The thin film contains 29.6 at % or more and 34.0 at % or less of Ti, 0.003 at % or more and 7.4 at % or less of Ag, and oxygen as the remainder thereof and has a ratio of oxygen to metals, O/(2Ti+0.5Ag), of 0.97 or more. The thin film has a high refractive index and a low extinction coefficient. In addition, the thin film has superior transmittance, minimally deteriorates in reflectance, and is useful as an interference film or a protective film for an optical information recording medium. The film may also be applied to a glass substrate to provide a heat reflective film, an antireflective film, or an interference filter. A method of producing the thin film is also disclosed.

Abstract: A magnetic material sputtering target characterized in that, in a plane for observing the oxide in the target, oxide grains in the target have an average diameter of 1.5 ?m or less, and that 60% or more of the oxide grains in the observing plane of the target have a difference between a maximum diameter and a minimum diameter of 0.4 ?m or less, where the maximum diameter is a maximum distance between arbitrary two points on the periphery of an oxide grain, and the minimum diameter is a minimum distance between two parallel lines across the oxide grain. A non-magnetic grain dispersion-type magnetic material sputtering target that can inhibit abnormal discharge due to an oxide causing occurrence of particles during sputtering is obtained.

Abstract: Provided is a ferromagnetic material sputtering target containing a matrix phase made of cobalt, or cobalt and chromium, or cobalt and platinum, or cobalt, chromium and platinum, and an oxide phase including at least a chromium oxide, wherein the sputtering target contains one or more types of Zr and W in a total amount of 100 wt ppm or more and 15000 wt ppm or less, and has a relative density of 97% or higher. An object of this invention is to provide a ferromagnetic material sputtering target containing chromium oxide with low generation of particles capable of maintaining high density and with uniformly pulverized oxide phase grains.

Abstract: A sputtering target containing, as metal components, 0.5 to 45 mol % of Cr and remainder being Co, and containing, as non-metal components, two or more types of oxides including Ti oxide, wherein a structure of the sputtering target is configured from regions where oxides including at least Ti oxide are dispersed in Co (non-Cr-based regions), and a region where oxides other than Ti oxide are dispersed in Cr or Co—Cr (Cr-based region), and the non-Cr-based regions are scattered in the Cr-based region. An object of this invention is to provide a sputtering target for forming a granular film which suppresses the formation of coarse complex oxide grains and generates fewer particles during sputtering.

Abstract: An Fe—Pt—Ag—C-based sintered compact sputtering target having a composition represented by a formula (Fe100-X—PtX)100-Y-Z—AgY-CZ (wherein X represents a numerical value satisfying a formula 35?X?55; Y represents a numerical value satisfying a formula 0.5?Y?15; and Z represents a numerical value satisfying a formula 15?Z?55) when expressed in an atomic ratio, and having a relative density of 93% or more. A method for producing an Fe—Pt—Ag—C-based sintered compact sputtering target, characterized in that an Fe—Pt—C sintered compact is produced in advance, the sintered compact is pulverized to produce a pulverized powder, the pulverized powder is mixed with a Ag powder, and the resultant mixed powder is subject to sintering at a temperature lower than a melting point of Ag.