Abstract: A vehicle notification sound emitting apparatus is basically provided with a sound emitting device and a notification sound control device. The sound emitting device emits a movement notification sound to outside of a vehicle to inform a person in an area surrounding the vehicle that the vehicle is moving at a low speed. The notification sound control device operates the sound emitting device to selectively emit the movement notification sound. The notification sound control device includes a notification sound prohibiting section and a prohibition cancelling section. The notification sound prohibiting section prohibits an emission of the movement notification sound by the sound emitting device. The prohibition cancelling section cancels a notification sound emission prohibition imposed by the notification sound prohibiting section either upon a vehicle speed of the vehicle exceeding a prescribed vehicle speed or based on position information of the vehicle.

Abstract: A vehicle notification sound emitting apparatus is basically provided with a sound emitting device and a notification sound control device. The sound emitting device emits a starting movement notification sound to outside of a vehicle to inform a person in an outside area surrounding the vehicle that the vehicle will transition from a stopped state to a moving state, and emits a moving notification sound to outside of the vehicle to inform a person in the outside area surrounding the vehicle that the vehicle is moving. The notification sound control device operates the sound emitting device to selectively emit the starting movement notification sound. The notification sound control device includes a notification sound emission timing section that sets a start timing of the starting movement notification sound in response to a shift operation having been performed and an additional start movement preparation operation of the vehicle having been performed.

Abstract: A vehicle notification sound emitting apparatus is basically provided with a sound emitting device and a notification sound control device. The sound emitting device is configured to emit a movement notification sound to an outside of a vehicle to inform a person in an area surrounding the vehicle that the vehicle will move. The notification sound control device is configured to operate the sound emitting device in response to occurrence of a vehicle condition. The notification sound control device setting the movement notification sound of the sound emitting device to a frequency in a range of 1.5 kHz to 6 kHz.

Abstract: A vehicle notification sound emitting apparatus is basically provided with a sound emitting device and a notification sound control device. The sound emitting device emits forward and reverse advancement notification sounds outside of a vehicle to inform a person in an area surrounding the vehicle that the vehicle will move. The notification sound control device operates the sound emitting device to selectively emit the forward and reverse movement notifications. The notification sound control device includes forward and reverse advancement notification sound emission timing sections. A start timing of the forward advancement notification sound is set in response to both a forward movement shift operation having been performed and an additional start movement preparation operation of the vehicle having been performed. A start timing of the reverse movement notification sound is set to be emitted immediately in response to the reverse movement shift operation having been performed.

Abstract: A vehicle notification sound emitting apparatus is basically provided with a sound emitting device and a notification sound control device. The sound emitting device is configured to emit a movement notification sound to outside of a vehicle to inform a person in an area surrounding the vehicle that the vehicle will move. The notification sound control device is configured to operate the sound emitting device to emit a movement notification during a period from when a vehicle speed becomes equal to or smaller than a prescribed value until a prescribed amount of time has elapsed in a situation where the vehicle speed becomes equal to or smaller than the prescribed value while the forward movement notification sound is being emitted.

Abstract: Provided is a manufacturing method for an offset MOS transistor capable of operating safely even under a voltage of 50 V or higher. In the offset MOS transistor which includes a LOCOS oxide film, the LOCOS oxide film formed in a periphery of a drain diffusion layer, in which a high withstanding voltage is required, is etched, and the drain diffusion layer is formed so as to spread into a surface region of a semiconductor substrate located below a region in which the LOCOS oxide film is thinned. As a result, end portions of the drain diffusion layer are covered by an offset diffusion layer, whereby electric field concentration occurring in a region of a lower portion of the drain diffusion layer can be relaxed.

Abstract: A vehicle notification sound emitting apparatus is basically provided with a sound emitting device and a notification sound control device. The sound emitting device is configured to emit a movement notification sound to outside of a vehicle to inform a person in an area surrounding the vehicle that the vehicle will move. The notification sound control device is configured to operate the sound emitting device to emit a movement notification during a period from when a vehicle speed becomes equal to or smaller than a prescribed value until a prescribed amount of time has elapsed in a situation where the vehicle speed becomes equal to or smaller than the prescribed value while the forward movement notification sound is being emitted.

Abstract: A vehicle notification sound emitting apparatus is basically provided with a sound emitting device and a notification sound control device. The sound emitting device emits a movement notification sound to outside of a vehicle to inform a person in an area surrounding the vehicle that the vehicle is moving at a low speed. The notification sound control device operates the sound emitting device to selectively emit the movement notification sound. The notification sound control device includes a notification sound prohibiting section and a prohibition cancelling section. The notification sound prohibiting section prohibits an emission of the movement notification sound by the sound emitting device. The prohibition cancelling section cancels a notification sound emission prohibition imposed by the notification sound prohibiting section either upon a vehicle speed of the vehicle exceeding a prescribed vehicle speed or based on position information of the vehicle.

Abstract: A vehicle notification sound emitting apparatus is basically provided with a sound emitting device and a notification sound control device. The sound emitting device emits forward and reverse advancement notification sounds outside of a vehicle to inform a person in an area surrounding the vehicle that the vehicle will move. The notification sound control device operates the sound emitting device to selectively emit the forward and reverse movement notifications. The notification sound control device includes forward and reverse advancement notification sound emission timing sections. A start timing of the forward advancement notification sound is set in response to both a forward movement shift operation having been performed and an additional start movement preparation operation of the vehicle having been performed. A start timing of the reverse movement notification sound is set to be emitted immediately in response to the reverse movement shift operation having been performed.

Abstract: A vehicle notification sound emitting apparatus is basically provided with a sound emitting device and a notification sound control device. The sound emitting device is configured to emit a movement notification sound to an outside of a vehicle to inform a person in an area surrounding the vehicle that the vehicle will move. The notification sound control device is configured to operate the sound emitting device in response to occurrence of a vehicle condition. The notification sound control device setting the movement notification sound of the sound emitting device to a frequency in a range of 1.5 kHz to 6 kHz.

Abstract: A vehicle notification sound emitting apparatus is basically provided with a sound emitting device and a notification sound control device. The sound emitting device emits a starting movement notification sound to outside of a vehicle to inform a person in an outside area surrounding the vehicle that the vehicle will transition from a stopped state to a moving state, and emits a moving notification sound to outside of the vehicle to inform a person in the outside area surrounding the vehicle that the vehicle is moving. The notification sound control device operates the sound emitting device to selectively emit the starting movement notification sound. The notification sound control device includes a notification sound emission timing section that sets a start timing of the starting movement notification sound in response to a shift operation having been performed and an additional start movement preparation operation of the vehicle having been performed.

Abstract: A vehicle notification sound emitting apparatus is basically provided with a first sound emitting device, a second sound emitting device and a notification sound control device. The first sound emitting device emits a first intermittent notification sound inside a cabin interior of a vehicle. The second sound emitting device emits a second intermittent notification sound outside of the cabin interior of the vehicle. The notification sound control device operates the first and second sound emitting devices to separately emit the first and second intermittent notification sounds in at least a partially overlapping pattern in response to occurrence of a vehicle condition to convey a same type of vehicle information to both inside and outside of the cabin interior of the vehicle. The notification sound control device includes a cabin interior-exterior notification sound synchronizing section that is configured to synchronize the first and second intermittent notification sounds.

Abstract: In a gate electrode (40) provided on a gate insulating film (30), a depletion layer (42) is formed at a junction surface between a P-type semiconductor layer (41) and a gate insulating film (30). Since a region of the depletion layer (42) inside the gate electrode (40) changes due to temperature change, inducing a change in an effect of a gate voltage to channel formation, a threshold voltage changes to a larger extent than in a case of a typical MOS transistor. This is used to control the MOS transistor to have a desired temperature characteristic. A temperature compensation circuit may be eliminated and the circuit scale may be reduced.

Abstract: Provided is a semiconductor device formed to an SOI substrate including a MOS transistor in which a parasitic MOS transistor is suppressed. The semiconductor device formed on the SOI substrate by employing a LOCOS process is structured such that a part of a polysilicon layer to becomes a gate electrode includes: a first conductivity type polysilicon region corresponding to a region of the silicon active layer which has a constant thickness and is to become a channel; and second conductivity type polysilicon regions corresponding to LOCOS isolation edges in each of which a thickness of the silicon active layer decreases.

Abstract: Provided is a reference voltage circuit in which a temperature characteristic of a reference voltage is excellent and a circuit scale is small. In the reference voltage circuit, for example, a temperature correction circuit separated from the reference voltage circuit is not used and a difference voltage between threshold voltages of two E-type NMOS transistors (14 and 15) is added to a threshold voltage of a D-type NMOS transistor to generate a reference voltage (Vref). Therefore, the influence of the D-type NMOS transistor on the reference voltage (Vref), which is a degradation factor of the temperature characteristic of the reference voltage (Vref), may be reduced to suppress a change in tilt and curve of the reference voltage (Vref) with respect to a temperature.

Abstract: A bipolar transistor for semiconductor device has a collector region having a first conductivity type disposed on a surface of a semiconductor substrate having the first conductivity type. A base region having a second conductivity type is disposed in the collector region. An emitter region having the first conductivity type is disposed in the base region. A high concentration first conductivity type region for a collector electrode is disposed in the collector region. A high concentration second conductivity type region for a base electrode is disposed in the base region. The high concentration first conductivity type region for a collector electrode and the high concentration second conductivity type region for a base electrode contact directly with each other so that the collector region and the base region have a same potential.

Abstract: Provided is a reference voltage circuit in which a temperature characteristic of a reference voltage is excellent and a circuit scale is small. In the reference voltage circuit, for example, a temperature correction circuit separated from the reference voltage circuit is not used and a difference voltage between threshold voltages of two E-type NMOS transistors (14 and 15) is added to a threshold voltage of a D-type NMOS transistor to generate a reference voltage (Vref). Therefore, the influence of the D-type NMOS transistor on the reference voltage (Vref), which is a degradation factor of the temperature characteristic of the reference voltage (Vref), may be reduced to suppress a change in tilt and curve of the reference voltage (Vref) with respect to a temperature.

Abstract: Provided is a semiconductor device formed to an SOI substrate including a MOS transistor in which a parasitic MOS transistor is suppressed. The semiconductor device formed on the SOI substrate by employing a LOCOS process is structured such that a part of a polysilicon layer to becomes a gate electrode includes: a first conductivity type polysilicon region corresponding to a region of the silicon active layer which has a constant thickness and is to become a channel; and second conductivity type polysilicon regions corresponding to LOCOS isolation edges in each of which a thickness of the silicon active layer decreases.

Abstract: Provided is a semiconductor device formed to an SOI substrate including a MOS transistor in which a parasitic MOS transistor is suppressed. The semiconductor device formed on the SOI substrate by employing a LOCOS process is structured such that a part of a polysilicon layer to becomes a gate electrode includes: a first conductivity type polysilicon region corresponding to a region of the silicon active layer which has a constant thickness and is to become a channel; and second conductivity type polysilicon regions corresponding to LOCOS isolation edges in each of which a thickness of the silicon active layer decreases.

Abstract: Provided is a semiconductor device including an N-channel high-voltage MOS transistor, in which wiring metal connected to a drain region is laid above a boundary portion between an oxide film formed by LOCOS process or the like on a low impurity concentration region and a high impurity concentration region forming the drain region, to thereby alleviate an electric field concentration at the boundary portion which is a contact portion between the low impurity concentration region and the high impurity concentration region by an electric field generated from the wiring metal toward a semiconductor substrate.