Patents by Inventor Hideshi Abe
Hideshi Abe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20150122995Abstract: A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.Type: ApplicationFiled: October 27, 2014Publication date: May 7, 2015Inventors: Keiji Mabuchi, Hideshi Abe, Hideo Kanbe, Shiro Uchida
-
Patent number: 8993369Abstract: A method for manufacturing a solid-state imaging device in which: photo sensor portions are formed in a silicon layer over a substrate, a first conductivity type region being included in the photo sensor portions and a second conductivity type region being formed in the silicon layer implanted from a rear-surface of the solid-state imaging device by ion implantation; a wiring portion is formed above the silicon layer; and a supporting substrate is bonded to the wiring portion, wherein, the solid-state imaging device is configured for receiving incident light via the rear-surface of the solid-state imaging device.Type: GrantFiled: July 13, 2011Date of Patent: March 31, 2015Assignee: Sony CorporationInventors: Yasushi Maruyama, Hideshi Abe, Hiroyuki Mori
-
Publication number: 20150069237Abstract: An infrared conversion device includes: a substrate (122); and a metal fine particle layer (123) formed on the substrate (122), wherein the metal fine particle layer (123) is formed with metal fine particles (124) and a dielectric material (125) that fills gaps between the metal fine particles (124) and absorbs incident infrared rays. Alternatively, an infrared conversion device detects infrared rays converted into visible light by detecting a change caused in the permittivity of a light receiving material (125) by infrared absorption as a change in the intensity of scattering light based on local plasmon resonance.Type: ApplicationFiled: April 17, 2013Publication date: March 12, 2015Inventors: Kojiro Yagami, Hideshi Abe, Tatsushiro Hirata
-
Publication number: 20140231948Abstract: A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.Type: ApplicationFiled: April 23, 2014Publication date: August 21, 2014Applicant: Sony CorporationInventors: Keiji TATANI, Hideshi ABE, Masanori OHASHI, Atsushi MASAGAKI, Atsuhiko YAMAMOTO, Masakazu FURUKAWA
-
Patent number: 8741681Abstract: A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.Type: GrantFiled: October 13, 2010Date of Patent: June 3, 2014Assignee: Sony CorporationInventors: Keiji Tatani, Hideshi Abe, Masanori Ohashi, Atsushi Masagaki, Atsuhiko Yamamoto, Masakazu Furukawa
-
Patent number: 8728847Abstract: A method for manufacturing a solid-state imaging device including: forming photo sensor portions in a silicon substrate; forming a wiring portion above said silicon substrate; bonding another substrate onto said wiring portion; removing said substrate in response to performing the bonding of the another substrate onto the wiring portion; and sequentially forming an anti-reflective coating on the silicon substrate, a color filter on the anti-reflective coating, and an on-chip lens.Type: GrantFiled: February 6, 2012Date of Patent: May 20, 2014Assignee: Sony CorporationInventors: Yasushi Maruyama, Hideshi Abe, Hiroyuki Mori
-
Patent number: 8652864Abstract: A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a second isolation diffusion layer electrically isolating the pixels under the first isolation diffusion layer, wherein a charge accumulation region is disposed in the well region surrounded by the first and second isolation diffusion layers, the inner peripheral part of the first isolation diffusion layer forms a projecting region, an impurity having a conductivity type of the first isolation diffusion layer and an impurity having a conductivity type of the charge accumulation region are mixed in the projecting region, and a part of the charge accumulation region between the charge accumulation region and the second isolation diffusion layer is abutted or close to the second isolation diffusion layer under the projecting region.Type: GrantFiled: October 13, 2010Date of Patent: February 18, 2014Assignee: Sony CorporationInventors: Keiji Tatani, Hideshi Abe, Masanori Ohashi, Atsushi Masagaki, Atsuhiko Yamamoto, Masakazu Furukawa
-
Patent number: 8598640Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: GrantFiled: August 17, 2011Date of Patent: December 3, 2013Assignee: Sony CorporationInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
-
Patent number: 8384817Abstract: A solid-state imager includes a photoelectric conversion region for photoelectrically converting a light beam received on a light receiving surface thereof into a signal charge and a waveguide path for guiding the light beam to the light receiving surface. The waveguide path includes a plurality of waveguide members, each waveguide member guiding a light beam incident on a light incident surface thereof to a light output surface thereof. The plurality of waveguide members are laminated on the light receiving surface. A first waveguide member closest to the light receiving surface from among the plurality of waveguide members faces the light receiving surface and is smaller in area than a light incident surface of a second waveguide member farthest from the light receiving surface from among the plurality of waveguide members.Type: GrantFiled: November 16, 2009Date of Patent: February 26, 2013Assignee: Sony CorporationInventor: Hideshi Abe
-
Patent number: 8253830Abstract: A solid-state image device is provided which has a semiconductor substrate, pixels A each containing a photoelectric conversion portion in which at least two PN junction parts are provide in a depth direction of the semiconductor substrate, pixels B each containing a photoelectric conversion portion in which at least one PN junction part is provided, first color filters provided above the pixels A, second color filters provided above the pixels B; and a detection mechanism for detecting a first color signal and a second color signal from the two PN junction parts of each of the pixels A and a third color signal from the PN junction part of each of the pixels B. According to the above solid-state image device, light can be more efficiently used than a color filter separation method, and superior color reproducibility to that of a three-well structure can be realized.Type: GrantFiled: April 30, 2010Date of Patent: August 28, 2012Assignee: Sony CorporationInventors: Hiroki Endo, Hideshi Abe
-
Publication number: 20120135559Abstract: A method for manufacturing a solid-state imaging device including: forming photo sensor portions in a silicon substrate; forming a wiring portion above said silicon substrate; bonding another substrate onto said wiring portion; removing said substrate in response to performing the bonding of the another substrate onto the wiring portion; and sequentially forming an anti-reflective coating on the silicon substrate, a color filter on the anti-reflective coating, and an on-chip lens.Type: ApplicationFiled: February 6, 2012Publication date: May 31, 2012Applicant: SONY CORPORATIONInventors: Yasushi Maruyama, Hideshi Abe, Hiroyuki Mori
-
Patent number: 8138065Abstract: A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 ?m or less.Type: GrantFiled: June 17, 2011Date of Patent: March 20, 2012Assignee: Sony CorporationInventors: Yasushi Maruyama, Hideshi Abe, Hiroyuki Mori
-
Patent number: 8110856Abstract: A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from a rear-surface side. The thickness of the silicon layer 4 is 10 ?m or less.Type: GrantFiled: August 27, 2009Date of Patent: February 7, 2012Assignee: Sony CorporationInventors: Yasushi Maruyama, Hideshi Abe, Hiroyuki Mori
-
Publication number: 20110298024Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: ApplicationFiled: August 17, 2011Publication date: December 8, 2011Applicant: SONY CORPORATIONInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
-
Publication number: 20110269258Abstract: A method for manufacturing a solid-state imaging device in which: photo sensor portions are formed in a silicon layer over a substrate, a first conductivity type region being included in the photo sensor portions and a second conductivity type region being formed in the silicon layer implanted from a rear-surface of the solid-state imaging device by ion implantation; a wiring portion is formed above the silicon layer; and a supporting substrate is bonded to the wiring portion, wherein, the solid-state imaging device is configured for receiving incident light via the rear-surface of the solid-state imaging device.Type: ApplicationFiled: July 13, 2011Publication date: November 3, 2011Applicant: SONY CORPORATIONInventors: Yasushi Maruyama, Hideshi Abe, Hiroyuki Mori
-
Publication number: 20110250717Abstract: A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 ?m or less.Type: ApplicationFiled: June 17, 2011Publication date: October 13, 2011Applicant: SONY CORPORATIONInventors: Yasushi MARUYAMA, Hideshi ABE, Hiroyuki MORI
-
Patent number: 8017984Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: GrantFiled: November 25, 2008Date of Patent: September 13, 2011Assignee: Sony CorporationInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
-
Patent number: 8004056Abstract: A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 ?m or less.Type: GrantFiled: August 27, 2009Date of Patent: August 23, 2011Assignee: Sony CorporationInventors: Yasushi Maruyama, Hideshi Abe, Hiroyuki Mori
-
Patent number: 7985614Abstract: A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 ?m or less.Type: GrantFiled: August 27, 2009Date of Patent: July 26, 2011Assignee: Sony CorporationInventors: Yasushi Maruyama, Hideshi Abe, Hiroyuki Mori
-
Patent number: 7981769Abstract: A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 ?m or less.Type: GrantFiled: August 27, 2009Date of Patent: July 19, 2011Assignee: Sony CorporationInventors: Yasushi Maruyama, Hideshi Abe, Hiroyuki Mori