Abstract: A pit gate includes a gate body which is inserted between a pool portion storing water and a canal portion connected to the pool portion and is configured to change a flow state of the water, and a seal portion (6) which is accommodated in a groove-shaped accommodation recess formed in the gate body and seals between the pool portion and the gate body. The seal portion (6) includes a low-rigidity portion (10) which is relatively easily deformed by a load according to a water pressure from the pool portion side, and a high-rigidity portion (11) which is provided on the pool portion side of the low-rigidity portion and is not easily deformed relatively by the load.

Abstract: A pit gate includes a gate body which is inserted between a pool portion storing water and a canal portion connected to the pool portion and is configured to change a flow state of the water, and a seal portion (6) which is accommodated in a groove-shaped accommodation recess formed in the gate body and seals between the pool portion and the gate body. The seal portion (6) includes a low-rigidity portion (10) which is relatively easily deformed by a load according to a water pressure from the pool portion side, and a high-rigidity portion (11) which is provided on the pool portion side of the low-rigidity portion and is not easily deformed relatively by the load.

Abstract: A shaft sealing structure for a rotation shaft, includes a sealing ring having ends formed by removal of its part. The ends abutting each other are continuous in the circumferential direction when the sealing ring is reduced in diameter to a radially inner side. The sealing ring is provided along the circumferential direction of the rotation shaft so as to be contactable with an outer peripheral surface of the rotation shaft. The structure also includes a pressing member configured to be movable between a pressing position and a retracted position; an elastic member configured to bias the pressing member toward the pressing position by elastic force; and a support member configured to support the pressing member at the retracted position against the elastic force, and to allow the pressing member to move to the pressing position at a predetermined temperature.

Abstract: This flexible thermal-control material (10A) is obtained by stacking: a reflective layer (12) which reflects sunlight; and an infrared-ray emission layer (13) which emits infrared rays. The infrared-ray emission layer (13) is configured from a radiation-crosslinked fluororesin material. Accordingly, a flexible thermal-control material is achieved which satisfies all of a plurality of conditions related to solar absorption (?), total hemispheric infrared ray emissivity (?), radiation resistance, and atomic oxygen resistance.

Abstract: This flexible thermal-control material (10A) is obtaining by stacking: a reflective layer (12) which reflects sunlight; and an infrared-ray emission layer (13) which emits infrared rays. The infrared-ray emission layer (13) is configured from a silicone material. Accordingly, a flexible thermal-control material is achieved which exhibits excellent optical characteristics such as solar absorption (?).

Abstract: A shaft sealing structure for a rotation shaft, includes a sealing ring having ends formed by removal of its part. The ends abutting each other are continuous in the circumferential direction when the sealing ring is reduced in diameter to a radially inner side. The sealing ring is provided along the circumferential direction of the rotation shaft so as to be contactable with an outer peripheral surface of the rotation shaft. The structure also includes a pressing member configured to be movable between a pressing position and a retracted position; an elastic member configured to bias the pressing member toward the pressing position by elastic force; and a support member configured to support the pressing member at the retracted position against the elastic force, and to allow the pressing member to move to the pressing position at a predetermined temperature.

Abstract: This leakage prevention seal is provided with: a first seal ring which surrounds a rotating shaft and which is in circumferential contact with the surface of a housing which faces the upstream side; a second seal ring, which, on the upstream side of the first seal ring, surrounds the rotating shaft and which is in circumferential contact with the first seal ring; and a heat-driven section which, when high-temperature pressurized water reaches the heat-driven section, reduces the diameter of both the first seal ring and the second seal ring and causes the inner peripheral surfaces of both the first seal ring and the second seal ring to be in contact with the rotating shaft. The circumferential positions of both a first range between the first seal ring and the rotating shaft and a second range formed by the second seal ring are different.

Abstract: This flexible thermal-control material (10A) is obtaining by stacking: a reflective layer (12) which reflects sunlight; and an infrared-ray emission layer (13) which emits infrared rays. The infrared-ray emission layer (13) is configured from a silicone material. Accordingly, a flexible thermal-control material is achieved which exhibits excellent optical characteristics such as solar absorption (?).

Abstract: This flexible thermal-control material (10A) is obtained by stacking: a reflective layer (12) which reflects sunlight; and an infrared-ray emission layer (13) which emits infrared rays. The infrared-ray emission layer (13) is configured from a radiation-crosslinked fluororesin material. Accordingly, a flexible thermal-control material is achieved which satisfies all of a plurality of conditions related to solar absorption (?), total hemispheric infrared ray emissivity (?), radiation resistance, and atomic oxygen resistance.

Abstract: This leakage prevention seal is provided with: a first seal ring which surrounds a rotating shaft and which is in circumferential contact with the surface of a housing which faces the upstream side; a second seal ring, which, on the upstream side of the first seal ring, surrounds the rotating shaft and which is in circumferential contact with the first seal ring; and a heat-driven section which, when high-temperature pressurized water reaches the heat-driven section, reduces the diameter of both the first seal ring and the second seal ring and causes the inner peripheral surfaces of both the first seal ring and the second seal ring to be in contact with the rotating shaft. The circumferential positions of both a first range between the first seal ring and the rotating shaft and a second range formed by the second seal ring are different.

Abstract: Disclosed are: a method for producing a silicon nitride film, wherein generation of blisters at the periphery of a substrate is suppressed when a silicon nitride film is formed through application of a bias power; and an apparatus for producing a silicon nitride film. Specifically disclosed are a method and apparatus for producing a silicon nitride film, wherein a silicon nitride film used for a semiconductor element is formed on a substrate by plasma processing. In the method and apparatus for producing a silicon nitride film, a bias is applied to the substrate at time (b1), and a starting material gas SiH4 for the silicon nitride film is started to be supplied at time (b3) after the application of the bias.

Abstract: In order to provide a plasma processing method and a plasma processing system which is capable of embedding a SiN film can be performed by applying bias power, in a plasma processing method for depositing a silicon nitride film on a substrate 21, which is a target for plasma processing, by using plasma of a raw material gas containing silicon and hydrogen and of a gas containing nitrogen, the bias power to inject ions into the substrate 21 is set equal to or higher than a threshold to increase a Si—H bonding amount, thereby reducing compression stress.

Abstract: Disclosed are: a method for producing a silicon nitride film, wherein generation of blisters at the periphery of a substrate is suppressed when a silicon nitride film is formed through application of a bias power; and an apparatus for producing a silicon nitride film. Specifically disclosed are a method and apparatus for producing a silicon nitride film, wherein a silicon nitride film used for a semiconductor element is formed on a substrate by plasma processing. In the method and apparatus for producing a silicon nitride film, a bias is applied to the substrate at time (b1), and a starting material gas SiH4 for the silicon nitride film is started to be supplied at time (b3) after the application of the bias.

Abstract: Disclosed is a silicon nitride film for a semiconductor element, wherein changes of film stress of the silicon nitride film are suppressed, said silicon nitride film being formed by applying bias power. Also disclosed are a method and an apparatus for manufacturing the silicon nitride film. The silicon nitride film, which is formed on a substrate (19) by plasma processing, and which is to be used in the semiconductor element, has a structure wherein a biased SiN film (31) formed by applying bias to the substrate (19) is sandwiched between an unbiased SiN film (32a) and an unbiased SiN film (32b), which are formed by not applying bias to the substrate (19).

Abstract: Disclosed are: a semiconductor light-emitting element which fulfills all of high migration preventing properties, high permeability and low film production cost; a protective film for a semiconductor light-emitting element; and a process for producing the protective film. In a semiconductor light-emitting element comprising multiple semiconductor layers (12-14) formed on a substrate (11) and electrode portions (15, 16) and electrode portions (17, 18) which act as electrodes for the multiple semiconductor layers (12-14), an SiN film (31) having a thickness of 35 nm or more and comprising silicon nitride covers the surrounds of the multiple semiconductor layers (12-14), the electrode portions (15, 16) and the electrode portions (17, 18) and an SiO film (32) having a higher thickness than that of the SiN film (31) and comprising silicon oxide covers the surround of the SiN film (31), as protective films for the semiconductor light-emitting element.

Abstract: Disclosed are: a semiconductor light-emitting element that fulfills all of having high migration prevention, high transmittance, and low film-production cost; the protective film of the semiconductor light-emitting element; and a method for fabricating same. To this end, in the semiconductor light-emitting element-which has: a plurality of semiconductor layers (12-14) formed on a substrate (11); and electrode sections (15, 16) and other electrode sections (17, 18) that are the electrodes of the plurality of semiconductor layers (12-14)—as the protective film thereof, the surroundings of the plurality of semiconductor layers (12-14), the electrode sections (15, 16), and the other electrode sections (17, 18) are covered by a SiN film (21) comprising silicon nitride of which the quantity of Si—H bonds in the film is less than 1.0×1021 bonds/cm3.

Abstract: An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device.

Abstract: A substrate support stage of a plasma processing device, which stably controls a substrate at a relatively high temperature. The substrate support stage includes an electrostatic attraction plate (14) containing a first electrode for holding a substrate (W) by electrostatic attraction, a second electrode for applying a bias to the substrate (W), and a heater for heating the substrate, a cylindrical flange (13) welded to the lower surface of the electrostatic attraction plate (14) and produced from an alloy having the same heat characteristic as the electrostatic attraction plate (14), and a support stage (10) including an O-ring (12) in a surface facing the lower surface of the flange (13), to which the flange (13) is attached via the O-ring (12), wherein when the bias power to be applied to the substrate (W) is changed, the heater power for heating the substrate (W); is changed so that the temperature of the substrate (W) is constant.

Abstract: An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device.

Abstract: In order to provide a plasma processing method and a plasma processing system which is capable of embedding a SiN film can be performed by applying bias power, in a plasma processing method for depositing a silicon nitride film on a substrate 21, which is a target for plasma processing, by using plasma of a raw material gas containing silicon and hydrogen and of a gas containing nitrogen, the bias power to inject ions into the substrate 21 is set equal to or higher than a threshold to increase a Si—H bonding amount, thereby reducing compression stress.