Abstract: A cap opening and closing structure is configured such that a surface of an inlet damper in a rotation axis direction and a side surface of a first supporting unit keep facing each other while the cap rotates. The surface is provided with a convex portion, and the side surface is provided with a concave portion, and the convex portion and the concave portion are engaged with each other in an open position. An inlet damper spring biases the convex portion so as to engage with the concave portion in the open position and to contact the facing side surface in a non-engagement state between the convex portion and the concave portion. Two inclined surfaces of the convex portion facing each other in a rotation direction contact respective ends of the concave portion in the open position.

Abstract: A chip shaped electronic device comprising an element body including zinc oxide material layers and internal electrode layers, wherein when assuming a minimum distance from an outermost side of the internal electrode layer in the stacking direction to a surface of the element body is 1 and measuring an ion intensity ratio of Li and Zn, (Li/Zn), in a range from the surface of the element body to a depth of (0.9×1) by a secondary ion mass spectrometry (SIMS), 0.001≦(Li/Zn)≦500. According to the invention, it is possible to provide a chip shaped electronic device, such as a multilayer chip varistor, not requiring glass coating or other insulative protective layer, being tolerant of temperature changes, capable of maintaining high resistance of an element surface even by reflow soldering, being highly reliable, and capable of being easily produced, and a method of producing the same.

Abstract: A chip shaped electronic device comprising an element body including zinc oxide material layers and internal electrode layers, wherein when assuming a minimum distance from an outermost side of the internal electrode layer in the stacking direction to a surface of the element body is 1 and measuring an ion intensity ratio of Li and Zn, (Li/Zn), in a range from the surface of the element body to a depth of (0.9×1) by a secondary ion mass spectrometry (SIMS), 0.001≦(Li/Zn)≦500. According to the invention, it is possible to provide a chip shaped electronic device, such as a multilayer chip varistor, not requiring glass coating or other insulative protective layer, being tolerant of temperature changes, capable of maintaining high resistance of an element surface even by reflow soldering, being highly reliable, and capable of being easily produced, and a method of producing the same.