Patents by Inventor Hideto Adachi
Hideto Adachi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20020054616Abstract: The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.Type: ApplicationFiled: November 6, 2001Publication date: May 9, 2002Inventors: Satoshi Kamiyama, Masakatsu Suzuki, Takeshi Uenoyama, Kiyoshi Ohnaka, Akira Takamori, Masaya Mannoh, Isao Kidoguchi, Hideto Adachi, Akihiko Ishibashi, Toshiya Fukuhisa, Yasuhito Kumabuchi
-
Patent number: 6373874Abstract: An n-type GaAs buffer layer 702, an n-type AlGaInP cladding layer 703, a multiple quantum well active layer 704 made of AlGaInP and GaInP, a first p-type AlGaInP cladding layer 705a, an optical guide layer 707, a second p-type cladding layer 705b, a p-type GaInP saturable absorption layer 706, and a third p-type AlGaInP cladding layer 707 are sequentially formed on an n-type GaAs substrate 701. In this structure, the volume of the saturable absorption layer is reduced, and the optical guide layer is provided. As the volume of the saturable absorption layer becomes smaller, the more easily the carrier density can be increased, the more easily the saturated state can be attained, and the more remarkable the saturable absorption effect becomes. Thus, a semiconductor laser having stable self-oscillation characteristics and, as a result, having a low relative noise intensity is realized.Type: GrantFiled: August 14, 1998Date of Patent: April 16, 2002Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Isao Kidoguchi, Hideto Adachi, Masaya Mannoh, Toshiya Fukuhisa, Akira Takamori
-
Patent number: 6326638Abstract: The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.Type: GrantFiled: May 15, 1998Date of Patent: December 4, 2001Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Satoshi Kamiyama, Masakatsu Suzuki, Takeshi Uenoyama, Kiyoshi Ohnaka, Akira Takamori, Masaya Mannoh, Isao Kidoguchi, Hideto Adachi, Akihiko Ishibashi, Toshiya Fukuhisa, Yasuhito Kumabuchi
-
Patent number: 6266354Abstract: A semiconductor laser device, including a substrate; a ridge stripe formed on the substrate and including an active layer, an n-cladding layer and p-cladding layer, the n-cladding layer and the p-cladding layer interposing the active layer; in which the ridge stripe has a laser unit which lases. In one embodiment the ridge stripe has a tip portion having a tapered shape, and an angle formed inside the ridge stripe by a bottom surface of the ridge stripe and a side surface of the ridge stripe is in the range of about 60° and about 90°. In one embodiment, the laser device includes a misoriented substrate and the ridge stripe has current blocking layers formed on both sides thereof.Type: GrantFiled: July 27, 2000Date of Patent: July 24, 2001Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Toyoji Chino, Yasuhito Kumabuchi, Isao Kidoguchi, Hideto Adachi
-
Patent number: 6195374Abstract: An n-type GaAs buffer layer 702, an n-type AlGaInP cladding layer 703, a multiple quantum well active layer 704 made of AlGaInP and GaInP, a first p-type AlGaInP cladding layer 705a, an optical guide layer 707, a second p-type cladding layer 705b, a p-type GaInP saturable absorption layer 706, and a third p-type AlGaInP cladding layer 707 are sequentially formed on an n-type GaAs substrate 701. In this structure, the volume of the saturable absorption layer is reduced, and the optical guide layer is provided. As the volume of the saturable absorption layer becomes smaller, the more easily the carrier density can be increased, the more easily the saturated state can be attained, and the more remarkable the saturable absorption effect becomes. Thus, a semiconductor laser having stable self-oscillation characteristics and, as a result, having a low relative noise intensity is realized.Type: GrantFiled: April 10, 2000Date of Patent: February 27, 2001Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Isao Kidoguchi, Hideto Adachi, Masaya Mannoh, Toshiya Fukuhisa, Akira Takamori
-
Patent number: 6185237Abstract: In a semiconductor laser including an active layer and a buried layer for absorbing laser light emitted from the active layer, an oscillation wavelength of the laser light is in a 650 nm band, an oscillation mode is a single transverse mode, and a peak of a light intensity distribution of the laser light is placed on the side opposite to the buried layer with respect to the center of the active layer.Type: GrantFiled: April 16, 1998Date of Patent: February 6, 2001Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Toshiya Fukuhisa, Masaya Mannoh, Isao Kidoguchi, Akira Takamori, Hideto Adachi
-
Patent number: 6151348Abstract: A semiconductor laser includes at least an active layer and a saturable absorbing layer, and a compressive strain amount in the saturable absorbing layer is set to be greater than a value of compressive strain in the active layer by about 0.3% or more. Alternatively, a semiconductor laser includes at least an active layer, a saturable absorbing layer, and a light guiding layer disposed in the vicinity of the saturable absorbing layer; and a compressive strain amount in the saturable absorbing layer is greater than a value of compressive strain in the active layer by about 0.3% or more.Type: GrantFiled: November 17, 1998Date of Patent: November 21, 2000Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hideto Adachi, Isao Kidoguchi, Yasuhito Kumabuchi
-
Patent number: 6141364Abstract: A semiconductor laser device of the present invention includes a substrate 201 made of n-type GaAs, an active layer 204, and a pair of cladding layers sandwiching the active layer 204. The device further includes a spacer layer 205 adjacent to the active layer 204 and a highly doped saturable absorbing layer 206. The carrier life time is shortened by doping the saturable absorbing layer 206 in a high concentration, whereby stable self-sustained pulsation can be obtained. As a result, a semiconductor laser device can be obtained, which has a low relative noise intensity in a wide range of temperatures.Type: GrantFiled: July 8, 1999Date of Patent: October 31, 2000Assignee: Matsushita Electric Industrial Co., LtdInventors: Hideto Adachi, Satoshi Kamiyama, Isao Kidoguchi, Takeshi Uenoyama, Masaya Mannoh, Toshiya Fukuhisa
-
Patent number: 6136626Abstract: A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.Type: GrantFiled: February 3, 1999Date of Patent: October 24, 2000Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Isao Kidoguchi, Hideto Adachi, Akihiko Ishibashi, Kiyoshi Ohnaka, Yuzaburo Ban, Minoru Kubo
-
Patent number: 6133058Abstract: A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.Type: GrantFiled: February 3, 1999Date of Patent: October 17, 2000Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Isao Kidoguchi, Hideto Adachi, Akihiko Ishibashi, Kiyoshi Ohnaka, Yuzaburo Ban, Minoru Kubo
-
Patent number: 6127201Abstract: An etching method for performing dry-etching on a III-V group compound semiconductor or a II-VI group compound semiconductor in a dry-etching apparatus comprising a plasma source for creating a plasma of density of about 10.sup.10 cm.sup.-3 or greater, using a mixed gas containing a gas including a halogen element and a gas including nitrogen. The etching conditions are as follows: (a flow rate of the gas containing said halogen gas)/(a flow rate of said nitrogen gas).gtoreq.1; and an internal pressure during etching reaction is about 1 mTorr or greater.Type: GrantFiled: March 16, 1999Date of Patent: October 3, 2000Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Toyoji Chino, Yasuhito Kumabuchi, Isao Kidoguchi, Hideto Adachi
-
Patent number: 6118800Abstract: In a semiconductor laser having an active layer and a cladding structure interposing the active layer, the cladding structure includes a saturable absorbing layer, and the saturable absorbing layer is formed of InGaAsP.Type: GrantFiled: December 19, 1997Date of Patent: September 12, 2000Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Isao Kidoguchi, Hideto Adachi, Yasuhito Kumabuchi
-
Patent number: 6081541Abstract: A semiconductor laser device of the present invention includes a substrate 201 made of n-type GaAs, an active layer 204, and a pair of cladding layers sandwiching the active layer 204. The device further includes a spacer layer 205 adjacent to the active layer 204 and a highly doped saturable absorbing layer 206. The carrier life time is shortened by doping the saturable absorbing layer 206 in a high concentration, whereby stable self-sustained pulsation can be obtained. As a result, a semiconductor laser device can be obtained, which has a low relative noise intensity in a wide range of temperatures.Type: GrantFiled: July 8, 1999Date of Patent: June 27, 2000Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hideto Adachi, Satoshi Kamiyama, Isao Kidoguchi, Takeshi Uenoyama, Masaya Mannoh, Toshiya Fukuhisa
-
Patent number: 6072817Abstract: A semiconductor laser device of the present invention includes a substrate 201 made of n-type GaAs, an active layer 204, and a pair of cladding layers sandwiching the active layer 204. The device further includes a spacer layer 205 adjacent to the active layer 204 and a highly doped saturable absorbing layer 206. The carrier life time is shortened by doping the saturable absorbing layer 206 in a high concentration, whereby stable self-sustained pulsation can be obtained. As a result, a semiconductor laser device can be obtained, which has a low relative noise intensity in a wide range of temperatures.Type: GrantFiled: October 30, 1996Date of Patent: June 6, 2000Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hideto Adachi, Satoshi Kamiyama, Isao Kidoguchi, Takeshi Uenoyama, Masaya Mannoh, Toshiya Fukuhisa
-
Patent number: 6055253Abstract: A semiconductor laser device having an active layer, a pair of cladding layers interposing the active layer and a multi-quantum barrier provided between one of the pair of cladding layers and the active layer is provided, and the multi-quantum barrier includes barrier layers and well layers being alternated with each other. The semiconductor laser device also including an optical guide layer confining light generated in a quantum well layer, and the optical guide layer being undoped.Type: GrantFiled: March 1, 1995Date of Patent: April 25, 2000Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Isao Kidoguchi, Kiyoshi Ohnaka, Hideto Adachi, Satoshi Kamiyama, Masaya Mannou, Takeshi Uenoyama
-
Patent number: 5974068Abstract: A semiconductor laser according to the present invention includes: a semiconductor substrate; a multilayer structure provided on the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers interposing the active layer, and current confining portion for injecting a current into a stripe-shaped predetermined region of the active layer, wherein the current confining portion includes a first current confining layer formed in regions excluding a region corresponding to the predetermined region of the active layer, the first current confining layer having an energy band gap larger than an energy band gap of the active layer and having a refractive index smaller than a refractive index of the active layer.Type: GrantFiled: March 21, 1997Date of Patent: October 26, 1999Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hideto Adachi, Isao Kidoguchi, Kiyoshi Ohnaka, Satoshi Kamiyama
-
Patent number: 5968845Abstract: An etching method for performing dry-etching on a III-V group compound semiconductor or a II-VI group compound semiconductor in a dry-etching apparatus comprising a plasma source for creating a plasma of density of about 10.sup.10 cm.sup.-3 or greater, using a mixed gas containing a gas including a halogen element and a gas including nitrogon. The etching conditions are as follows: (a flow rate of the gas containing said halogen gas)/(a flow rate of said nitrogen gas) .gtoreq.1; and an internal pressure during etching reaction is about 1 mTorr or greater.Type: GrantFiled: February 7, 1997Date of Patent: October 19, 1999Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Toyoji Chino, Yasuhito Kumabuchi, Isao Kidoguchi, Hideto Adachi
-
Patent number: 5895225Abstract: A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.Type: GrantFiled: November 26, 1997Date of Patent: April 20, 1999Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Isao Kidoguchi, Hideto Adachi, Akihiko Ishibashi, Kiyoshi Ohnaka, Yuzaburo Ban, Minoru Kubo
-
Patent number: 5787104Abstract: The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.Type: GrantFiled: January 19, 1996Date of Patent: July 28, 1998Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Satoshi Kamiyama, Masakatsu Suzuki, Takeshi Uenoyama, Kiyoshi Ohnaka, Akira Takamori, Masaya Mannoh, Isao Kidoguchi, Hideto Adachi, Akihiko Ishibashi, Toshiya Fukuhisa, Yasuhito Kumabuchi
-
Patent number: 5751013Abstract: A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.Type: GrantFiled: March 21, 1996Date of Patent: May 12, 1998Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Isao Kidoguchi, Hideto Adachi, Akihiko Ishibashi, Kiyoshi Ohnaka, Yuzaburo Ban, Minoru Kubo