Abstract: A treating solution supply apparatus which supplies a treating solution for treating a substrate includes a liquid passage for allowing the treating solution to flow therethrough; and a pump including a chamber with a variable volume for receiving and feeding the treating solution from/to the liquid passage, and a chamber driver electrically driven to vary the volume of the chamber. The liquid passage, chamber, and chamber driver are arranged in the stated order laterally.

Abstract: A chamber has a first opening, a second opening, and a third opening. The second opening is higher in level than the first and third openings, and is located at the highest position of a reservoir. Air bubbles are easily collected around the second opening, higher in level than the third opening, due to buoyancy. Moreover, the chamber includes an upper slope on an upper inner wall thereof such that a sectional area of the chamber becomes smaller toward the highest position of the reservoir. The upper slope causes the air bubbles not to stagnate but to be guided to the second opening along the upper slope. This makes easy discharge of the air bubbles from the chamber.

Abstract: A chamber has at least three openings, or a first opening, a second opening, and a third opening formed therein that are in communication with a reservoir. The second opening is higher in level than the first opening. The third opening is used for discharging a liquid within the reservoir by introducing gas through at least one of the first opening and the second opening into the reservoir. Since the third opening is the lowest in level among the three openings, the liquid stored in the reservoir is able to be drained easily.

Abstract: A substrate treating method includes a determining step for determining a treating condition for hydrophobizing a surface of a substrate, based on a target regarding a dissolved area size in a resist pattern, and a treating step for hydrophobizing the surface of the substrate with the treating condition determined in the determining step before forming resist film on the surface of the substrate.

Abstract: A chamber has at least three openings, or a first opening, a second opening, and a third opening formed therein that are in communication with a reservoir. The second opening is higher in level than the first opening. The third opening is used for discharging a liquid within the reservoir by introducing gas through at least one of the first opening and the second opening into the reservoir. Since the third opening is the lowest in level among the three openings, the liquid stored in the reservoir is able to be drained easily.

Abstract: A treating solution supply apparatus which supplies a treating solution for treating a substrate includes a liquid passage for allowing the treating solution to flow therethrough; and a pump including a chamber with a variable volume for receiving and feeding the treating solution from/to the liquid passage, and a chamber driver electrically driven to vary the volume of the chamber. The liquid passage, chamber, and chamber driver are arranged in the stated order laterally.

Abstract: A chamber has a first opening, a second opening, and a third opening. The second opening is higher in level than the first and third openings, and is located at the highest position of a reservoir. Air bubbles are easily collected around the second opening, higher in level than the third opening, due to buoyancy. Moreover, the chamber includes an upper slope on an upper inner wall thereof such that a sectional area of the chamber becomes smaller toward the highest position of the reservoir. The upper slope causes the air bubbles not to stagnate but to be guided to the second opening along the upper slope. This makes easy discharge of the air bubbles from the chamber.

Abstract: A substrate is held and rotated in a horizontal attitude by a rotation holder. A coating liquid is supplied by a coating liquid supplier to a surface to be processed of the substrate rotated by the rotation holder. A first removal liquid is supplied by a first removal liquid supplier to a first annular region at a peripheral portion of the substrate rotated by the rotation holder before the coating liquid supplied by the coating liquid supplier loses fluidity. In this state, a supply position of the first removal liquid by the first removal liquid supplier is moved from an inner edge to an outer edge of the first annular region.

Abstract: A substrate treating method includes a determining step for determining a treating condition for hydrophobizing a surface of a substrate, based on a target regarding a dissolved area size in a resist pattern, and a treating step for hydrophobizing the surface of the substrate with the treating condition determined in the determining step before forming resist film on the surface of the substrate.

Abstract: A substrate is held and rotated in a horizontal attitude by a rotation holder. A coating liquid is supplied by a coating liquid supplier to a surface to be processed of the substrate rotated by the rotation holder. A first removal liquid is supplied by a first removal liquid supplier to a first annular region at a peripheral portion of the substrate rotated by the rotation holder before the coating liquid supplied by the coating liquid supplier loses fluidity. In this state, a supply position of the first removal liquid by the first removal liquid supplier is moved from an inner edge to an outer edge of the first annular region.

Abstract: After a solvent is discharged onto a substrate in a period from a time point t0 to a time point t1, rotation of the substrate is started at a time point t2. A resist liquid is discharged onto a center portion of a target surface of the substrate at a time point t3. A rotation speed of the substrate starts to decrease at a time point t4, and attains a first speed after a certain period of time. The discharge of the resist liquid is stopped at a time point t5. The rotation of the substrate is accelerated in a period from a time point t6 to a time point t7, and the rotation speed of the substrate attains a second speed at the time point t7. The rotation of the substrate is decelerated in a period from the time point t7 to a time point t8, and the rotation speed of the substrate attains a third speed at the time point t8.

Abstract: After a solvent is discharged onto a substrate in a period from a time point t0 to a time point t1, rotation of the substrate is started at a time point t2. A resist liquid is discharged onto a center portion of a target surface of the substrate at a time point t3. A rotation speed of the substrate starts to decrease at a time point t4, and attains a first speed after a certain period of time. The discharge of the resist liquid is stopped at a time point t5. The rotation of the substrate is accelerated in a period from a time point t6 to a time point t7, and the rotation speed of the substrate attains a second speed at the time point t7. The rotation of the substrate is decelerated in a period from the time point t7 to a time point t8, and the rotation speed of the substrate attains a third speed at the time point t8.