Abstract: A method for driving an electrophoretic display device that is provided with a display unit having a pixel is provided. The pixel of the electrophoretic display device has a pixel electrode, a common electrode, an electrophoretic element containing a plurality of electrophoretic particles, the electrophoretic element being located between the pixel electrode and the common electrode, a pixel-switching element, and a latch circuit that is connected between the pixel electrode and the pixel-switching element. The method for driving an electrophoretic display device includes: during an image display time period, causing the display unit to display an image; during an image holding time period, holding the displayed image; and during a refresh time period, causing the display unit to display the image again. In the image holding time period of the driving method, the power voltage of the latch circuit is set at the minimum voltage of a power system provided in the electrophoretic display device.

Abstract: Provided is a voltage selection circuit for outputting a potential selected from a plurality of input potentials, the voltage selection circuit capable of selectively outputting a first high-level potential being a highest potential, a second high-level potential, or a third high-level potential being a lowest potential from an output terminal thereof. The voltage selection circuit includes a first switching circuit that supplies the first high-level potential to the output terminal, a second switching circuit that supplies the second high-level potential to the output terminal, and a third switching circuit that supplies the third high-level potential to the output terminal. The first switching circuit includes a high-voltage transistor and a level shifter connected to a gate terminal of the high-voltage transistor.

Abstract: A semiconductor memory device includes a memory cell array, word lines each of which connects the control gates of the memory cells on the same row together in the memory cell array, a row decoder which selects a word line, and applies a voltage to the selected word line, and a voltage generator which generates a boosted voltage, and outputs the boosted voltage as the voltage, the voltage generator includes a comparator which compares a first voltage with a second voltage, and outputs a comparison result signal, a constant current circuit which generates a first control signal in accordance with the comparison result signal, a first delay circuit which generates a second control signal by delaying the comparison result signal, and a charge pump circuit which generates the boosted voltage in response to the first and second control signals.

Abstract: A device includes first and second memory cell arrays, first and second decoders, first and second sense amplifiers, and first and second switch circuits. The first switch circuit switches the supply of writing and erasing voltages or a reading voltage to the first memory cell array, and switches the supply of writing and erasing addresses or a reading address to the first decoder, and switches the connection of a data line connected to the first memory cell array to the first sense amplifier. The second switch circuit switches the supply of writing and easing voltages or a reading voltage to one of the second memory cell arrays, and switches the supply of writing and erasing addresses or a reading address to one of the second decoders, and switches the connection of a data line connected to the second memory cell arrays to the second sense amplifier.

Abstract: A semiconductor memory device includes a memory cell array, word lines each of which connects the control gates of the memory cells on the same row together in the memory cell array, a row decoder which selects a word line, and applies a voltage to the selected word line, and a voltage generator which generates a boosted voltage, and outputs the boosted voltage as the voltage, the voltage generator includes a comparator which compares a first voltage with a second voltage, and outputs a comparison result signal, a constant current circuit which generates a first control signal in accordance with the comparison result signal, a first delay circuit which generates a second control signal by delaying the comparison result signal, and a charge pump circuit which generates the boosted voltage in response to the first and second control signals.

Abstract: Provided is a driving device of a segment display type electrophoretic display panel including a common electrode, a plurality of segment electrodes which face the common electrode, and a dispersion system containing electrophoretic particles arranged between the common electrode and the segment electrodes, the driving device including: a driving circuit which supplies a driving voltage having a voltage value according to plural pieces of display data, which are supplied as a series of serial data, to the segment electrodes, wherein the driving circuit includes a switching circuit which switches the driving voltage according to the display data to a voltage value according to reverse data of the display data, on the basis of at least one external control signal input to the driving circuit, independent of the display data.

Abstract: Provided is a drawing device of an electro-optical display device which includes a drawing circuit for outputting image data to a driving circuit for driving electro-optical elements of a display unit for displaying an image based on the image data, and a control circuit for controlling the drawing circuit, wherein the drawing circuit includes a first memory in which a plurality of image material data is previously stored, a first working memory having a working area in which the image data composed of at least one image material data is generated, a second working memory having a command information area in which a command signal for instructing execution of a predetermined process is written, and a drawing control circuit which writes the command signal in the command information area and generates command information composed of a plurality of command signals in the command information area, and the control circuit outputs a first control command signal for executing the command information to the drawing

Abstract: There is disclosed a semiconductor integrated circuit device having first and second load circuits for write. At the time of an all bit-stress test, a high voltage for write is supplied from the first and second load circuits for write to the all bit lines. At the time of an even bit-stress test, the high voltage for write is supplied from the first load circuit for write to the even bit lines and a lower potential than the high voltage for write is supplied from the second load circuit for write to the odd bit lines. At the time of an odd bit-stress test, the lower potential is supplied from the first load circuit for write to the even bit lines and the high voltage for write is supplied from the second load circuit for write to the odd bit lines.

Abstract: A semiconductor device includes a memory cell array including a plurality of cores, each of said cores including one block or a plurality of blocks. The semiconductor device further includes a first power supply line which is provided commonly for said plurality of cores and which provides a data reading power supply potential; a second power supply line which is provided commonly for said plurality of cores and which provides a data writing or erasing power supply potential; and a power supply line switching circuit which is provided for each of said plurality of cores and which selectively connects a corresponding one of said plurality of cores to said first power supply line or said second power supply line in accordance with whether said corresponding one of said plurality of cores is in a data read mode or a data write or erase mode.

Abstract: There is disclosed a semiconductor integrated circuit device having first and second load circuits for write. At the time of an all bit-stress test, a high voltage for write is supplied from the first and second load circuits for write to the all bit lines. At the time of an even bit-stress test, the high voltage for write is supplied from the first load circuit for write to the even bit lines and a lower potential than the high voltage for write is supplied from the second load circuit for write to the odd bit lines. At the time of an odd bit-stress test, the lower potential is supplied from the first load circuit for write to the even bit lines and the high voltage for write is supplied from the second load circuit for write to the odd bit lines.

Abstract: A driving device of an electrophoretic display panel having a common electrode and a plurality of divided electrodes disposed opposite to the common electrode includes: a first driving circuit that outputs a plurality of voltages corresponding to a plurality of voltage data supplied as a series of data and supplies the plurality of voltages to the plurality of divided electrodes; and a second driving circuit that outputs a voltage corresponding to supplied data and supplies the voltage to the common electrode.

Abstract: A test interface receives a test command designating execution of a test for a memory cell. The test storage circuit stores test information necessary to execute the test. The test storage circuit includes an erasable programmable storage unit. The decoder decodes the test command input to the test interface, and selects the test information stored in the test storage circuit. The sense amplifier reads out, from the test storage circuit, the test information selected by the decoder. The holding circuit holds the test information read out by the sense amplifier. The control circuit controls a test operation of checking whether the memory cell normally operates, on the basis of the test information held in the holding circuit. The defect storage circuit is formed for the memory cell, and stores fail information indicating that the memory cell is defective if the memory cell does not normally operate in the test operation.

Abstract: A device includes first and second memory cell arrays, first and second decoders, first and second sense amplifiers, and first and second switch circuits. The first switch circuit switches the supply of writing and erasing voltages or a reading voltage to the first memory cell array, and switches the supply of writing and erasing addresses or a reading address to the first decoder, and switches the connection of a data line connected to the first memory cell array to the first sense amplifier. The second switch circuit switches the supply of writing and easing voltages or a reading voltage to one of the second memory cell arrays, and switches the supply of writing and erasing addresses or a reading address to one of the second decoders, and switches the connection of a data line connected to the second memory cell arrays to the second sense amplifier.

Abstract: A semiconductor device includes a memory cell array including a plurality of cores, each of said cores including one block or a plurality of blocks. The semiconductor device further includes a first power supply line which is provided commonly for said plurality of cores and which provides a data reading power supply potential; a second power supply line which is provided commonly for said plurality of cores and which provides a data writing or erasing power supple potential; and a power supply line switching circuit which is provided for each of said plurality of cores and which selectively connects a corresponding one of said plurality of cores to said first power supply line or said second power supply line in accordance with whether said corresponding one of said plurality of cores is in a data read mode or a data write or erase mode.

Abstract: A semiconductor device has a memory cell array having the arrangement of a plurality of cores, each of which comprises one block or a set of a plurality of blocks, each block defining a range of memory cells serving as a unit of data erase. The semiconductor device has a bank setting memory circuit configured to select an optional number of cores of the cores as a first bank and to set the remaining cores as a second bank, so as to allow a data read operation to be carried out in one of the first and second banks while a data write or erase operation is carried out in the other of the first and second banks.

Abstract: A semiconductor integrated circuit device includes a main cell array, a fuse cell array, main cell word lines arranged at the main cell array, and fuse cell word lines arranged at the fuse cell array. The fuse cell word lines are formed in a same direction as a direction of the main cell word lines.

Abstract: A collector that has enough hardness and flexibility and a battery electrode substrate that uses this collector are provided. Also provided is a low-cost battery electrode substrate that exhibits excellent high-rate charge/discharge characteristics and low electrical resistance and that is able to avoid the decline in cycle characteristics caused by repetitive charging/discharging. The invention is a battery electrode substrate having a structure in which a nickel film is coated on the surface of plastic fiber of a woven or unwoven fabric, wherein a metallic porous body in which the average coverage ratio by the nickel film is not less than 85% is used.

Abstract: There is disclosed a semiconductor memory device including a memory cell array containing a plurality of banks each having one or more blocks, a data erase circuit configured to erase data from selected blocks in banks at a unit of block, and an automatic multi-block erase circuit configured to enable a data read circuit configured to read data from memory cells provided in one bank, when data erase operation for all erase-object blocks in the one bank is completed, while continuing a data erasing operation of a next erase-object block included in another bank.

Abstract: A semiconductor device has a memory cell array having the arrangement of a plurality of cores, each of which comprises one block or a set of a plurality of blocks, each block defining a range of memory cells serving as a unit of data erase. The semiconductor device has a bank setting memory circuit configured to select an optional number of cores of the cores as a first bank and to set the remaining cores as a second bank, so as to allow a data read operation to be carried out in one of the first and second banks while a data write or erase operation is carried out in the other of the first and second banks.

Abstract: A semiconductor device has a memory cell array having the arrangement of a plurality of cores, each of which comprises one block or a set of a plurality of blocks, each block defining a range of memory cells serving as a unit of data erase. The semiconductor device has a bank setting memory circuit configured to select an optional number of cores of the cores as a first bank and to set the remaining cores as a second bank, so as to allow a data read operation to be carried out in one of the first and second banks while a data write or erase operation is carried out in the other of the first and second banks.