Abstract: Provided is a thermal insulator B formed by bonding a plurality of aerogel particles A with adhesive 2 and a method for producing the same. The aerogel particles A have an average particle size of 500 ?m or more. The adhesive 2 exists as particles on surfaces of the aerogel particles A. A ratio (adhesive/aerogel particle) of an average particle size of the adhesive 2 to the average particle size of the aerogel particles A falls within a range of 1/200 to 1/10. For producing the thermal insulator B, the adhesive 2 is made of an adhesive powder including thermosetting resin or thermoplastic resin. Obtained thermal insulator B has an improved strength and is excellent in thermal insulating properties.

Abstract: A motion guide display device includes a head-mountable image display device that displays an image, a camera that takes a self image from a first person perspective, an image display processing unit that displays a reference image from a first person perspective as a following target and the self image at the display unit alternately in a time-dividing manner under the condition generating a blending feeling, and a display mode setting unit that lets the image display processing unit operate within the range of cycles (frequencies) and self-other ratios as the condition generating a blending feeling. This can bring the blending feeling with the reference image, and can support the continuation of spontaneous following motion.

Abstract: A ship's speed meter for measuring a speed relative to the water of a ship 10, the ship's speed meter including a wave transmitter 1 for emitting a sound wave toward a sea bottom 20, a wave receiver 2 for detecting a plurality of reflected waves, which are reflected waves of the sound wave having been emitted from the wave transmitter 1, reflected by a plurality of reflecting objects 30 positioned at different water depths, and an arithmetic processing unit 4 for calculating a ship's speed relative to the water of the ship 10 based on a frequency difference of the sound wave and the reflected wave.

Abstract: A trochoid propulsion system includes wheels provided at three points of the outer edge of an outer wheel part that turns around a driving shaft; and a steering link part that co-rotates with the action part and is movable horizontally on a turning plane. The steering link part includes a liner slider including a guide member attached to a vertical steering shaft that rotates each wheel so that the length direction is in a radial direction of the steering shaft and a moving member that slides on the guide member. In a state where a center of rotation of the steering link part coincides with the driving shaft of the outer wheel part, a rotating shaft provided corresponding to the steering shaft is attached rotatably to the corresponding moving member at a position separated from the steering shaft by a predetermined distance.

Abstract: A trochoid propulsion system includes steels provided at three points of the outer edge of an outer wheel part that turns around a driving shaft; and a steering link part that co-rotates with the action part and is movable horizontally on a turning plane. The steering link part includes a liner slider including a guide member attached to a vertical steering shaft that rotates each wheel so that the length direction is in a radial direction of the steering shaft and a moving member that slides on the guide member. In a state where a center of rotation of the steering link part coincides with the driving shaft of the outer wheel part, a rotating shaft provided corresponding to the steering shaft is attached rotatably to the corresponding moving member at a position separated from the steering shaft by a predetermined distance.

Abstract: A method that suppresses etching damage without increasing a chip area of a semiconductor device. An integrated circuit including a MOS transistor is formed in a device area, and a discharge diffusion region is formed in a device area, and a discharge diffusion region is formed in a grid area. The discharge diffusion region is connected to a metal wiring of the integrated circuit via a contact hole. Therefore, when the metal wiring is formed by a dry etching method, an electric charge stored in the metal wiring is discharged to a semiconductor substrate through the discharge diffusion region. Thus, etching damage of the MOS transistor is reduced. Since the discharge diffusion region and the contact hole are formed within the grid area, they are cut off by a dicing process, thus causing no increase in chip area of the semiconductor device.

Abstract: A semiconductor device prevents diffusion of electric charges retained in silicon nitride films of a MOSFET during a writing operation and has a favorable charge retention property. The silicon nitride films, each of which functions as a memory functional body, are formed at a thickness of 100 ? at a maximum. Each of the silicon nitride film dose not exist on each side surfaces of a gate electrode but exists only on each silicon oxide films between the gate electrode and a substrate, so that each of the silicon nitride films is small in volume.

Abstract: Based on numerical values with respect to factors influencing shares of existing products and a new product evaluated by more than one people, a structured neural network calculates predictive shares of the new product predicted by the respective persons. Comprehensive evaluations on the respective products and the new product are calculated for each person, based on the numerical values with respect to the respective factors. Correlation coefficients between the comprehensive evaluations on the respective products by the respective persons and the actual shares are calculated. The predictive shares calculated by the structural neural network are layered out in accordance with the correlation coefficients for the respective person. Average values of the predictive shares and confidence intervals are calculated for the respective layers, and based on them and the calculation result obtained by the structured neural network, a share of the new product is predicted.

Abstract: The present invention aims to suppress etching damage without increasing a chip area of a semiconductor device. An integrated circuit including a MOS transistor is formed in a device area, and a discharge diffusion region is formed in a grid area. The discharge diffusion region is connected to a metal wiring of the integrated circuit via a contact hole. Therefore, when the metal wiring is formed by a dry etching method, an electric charge stored in the metal wiring is discharged to a semiconductor substrate through the discharge diffusion region. Thus, etching damage of the MOS transistor is reduced. Since the discharge diffusion region and the contact hole are formed within the grid area, they are cut off by a dicing process, thus causing no increase in chip area of the semiconductor device.

Abstract: A fiber board, comprising: kenaf fibers having an average length of 10 to 200 mm and an average diameter of 10 to 300 ?m, and a thermosetting adhesive agent, the fiber board having a density of 600 to 900 kg/m3, being excellent in strength and moisture permeability.

Abstract: The present invention relates to a method of producing a fiber board characterized in that it comprises the following processes (a)–(f): (a) a separating process of a bast portion, (b) a fiberizing process by defibrating the bast portion of the kenaf, (c) a preparing process of a mat comprising the kenaf fibers having an average length of 10–200 mm and an average diameter of 10–300 ?m, (d) a supplying process of an adhesive agent into the fiber mat, (e) a drying process of the adhesive agent, and (f) a molding process by heating said fiber mat under pressure to form a fiber board having a density of 600–900 kg/m3.

Abstract: A fiber board, comprising:

Abstract: The present invention relates to a method of producing a fiber board characterized in that it comprises the following processes (a)-(f):

Abstract: Based on numerical values with respect to factors influencing shares of existing products and a new product evaluated by more than one people, a structured neural network calculates predictive shares of the new product predicted by the respective persons (S6). Comprehensive evaluations on the respective products and the new product are calculated for each person, based on the numerical values with respect to the respective factors (S10). Correlation coefficients between the comprehensive evaluations on the respective products by the respective persons and the actual shares are calculated (S12), and relationships between the are obtained (S12). Predictive shares of the new product are calculated for the respective persons based on the relationships and the comprehensive evaluations on the new product (S16). The predictive shares are layered out in accordance with the correlation coefficients for the respective persons (S18).

Abstract: Disclosed herein is a semiconductor memory device. In the semiconductor memory device, a transfer transistor having a drain region and a source region is formed on an Si semiconductor substrate. A lower end of a storage node is electrically connected to the drain region through a drain contact hole defined in an interlayer insulator. The storage node has an on-film extending portion which extends on an upper surface of the interlayer insulator, and a fin-shaped electrode portion which protrudes from the on-film extending portion. Structurally, the fin-shaped electrode portion is provided within a capacitor region so as to extend within a region smaller than the capacitor region and is spaced away from the on-film extending portion on the side of a bit line contact hole defined in the interlayer insulator.

Abstract: In a semiconductor device, a transfer transistor having a drain region and a source region is formed on an Si semiconductor substrate. A lower end of a storage node is electrically connected to the drain region through a drain contact hole defined in an interlayer insulator. The storage node has an on-film extending portion which extends on an upper electrode portion which protrudes from the on-film extending portion. Structurally, the fin-shaped electrode portion is provided within a capacitor region so as to extend within a region smaller than the capacitor region and is spaced away from the on-film extending portion on the side of a bit line contact hole defined in the interlayer insulator.

Abstract: A method and a system for forecasting the demand agreeing with the fluctuation trend of sales results at high and stable precision, without requiring user's maintenance, by using a model optimum for grasping the fluctuation trend of sales results, even if the products are diverse, by storing a plurality of models of neural network, for example, a model for forecasting the demand from data of the past several months, a model for forecasting the demand from data of the same period of the previous year, and a model for forecasting the demand from both the latest data and data of the same period of the previous year, and also by feeding sales results into a model of neural network to make it learn by the short period such as by the week, and a recording medium in which is recorded such program.

Abstract: A sound absorptive material has powder particles having a sound absorption characteristics at a low frequency and generally supported in a vibratable state by a porous support, whereby the sound absorptive material can be increased in the sound absorption coefficient in the low frequency range while maintaining the absorptive material to be thin.