Abstract: An amplifier includes a first amplifier comprising an N-type field-effect transistor receiving a reference voltage at a gate, a P-type field-effect transistor connected between a drain of the N-type field-effect transistor and a power supply voltage line, and a constant current source connected between a source of the N-type field-effect transistor and a ground, to output a voltage from a connection of the drain of the N-type and P-type field-effect transistors; a second amplifier comprising a resistance and P-type field-effect transistors connected in series between the power supply voltage line and the ground to receive the voltage output from the first amplifier at their gate, and outputting a voltage from a connection of the P-type field-effect transistor and the resistance; and a switch between an output of the first amplifier and the power supply voltage line and comprising an N-type field-effect transistor receiving a reference voltage at a gate.

Abstract: An amplifier includes a first amplifier comprising an N-type field-effect transistor receiving a reference voltage at a gate, a P-type field-effect transistor connected between a drain of the N-type field-effect transistor and a power supply voltage line, and a constant current source connected between a source of the N-type field-effect transistor and a ground, to output a voltage from a connection of the drain of the N-type and P-type field-effect transistors; a second amplifier comprising a resistance and P-type field-effect transistors connected in series between the power supply voltage line and the ground to receive the voltage output from the first amplifier at their gate, and outputting a voltage from a connection of the P-type field-effect transistor and the resistance; and a switch between an output of the first amplifier and the power supply voltage line and comprising an N-type field-effect transistor receiving a reference voltage at a gate.

Abstract: A reference voltage generating circuit includes a resistance dividing circuit formed with resistors connected in series.

Abstract: A reference voltage generating circuit for producing a predetermined reference voltage at an output node includes a depletion-type n-channel field-effect transistor serving as a first field-effect transistor having one node thereof coupled to a power supply voltage, a second field-effect transistor having one node thereof coupled to another node of the first field-effect transistor and having a highly-doped n-type gate, and a third field-effect transistor having one node thereof coupled to another node of the second field-effect transistor, another node thereof coupled to a ground voltage, and a highly-doped p-type gate.

Abstract: A reference voltage generator includes a first field effect transistor with n-type heavily doped gate structure and a second field effect transistor with p-type heavily doped gate structure. The first transistor is configured to have a gate and a substrate gate connected to ground, one terminal connected to a voltage supply, and another terminal connected to an output node. The second transistor is configured to have a gate and one terminal connected to the output node, and a substrate gate and another terminal connected to ground. The output node outputs a given reference voltage when voltage is supplied from the voltage supply. A voltage regulator that generates a constant voltage based on a given reference voltage incorporates the reference voltage generator.

Abstract: A reference voltage generation circuit includes: a first field-effect transistor that is an n channel-type field-effect transistor of a depletion-type, wherein one terminal of the first field-effect transistor is connected to a predetermined power source voltage; a second field-effect transistor including a concentrated n-type gate, wherein one terminal of the second field-effect transistor is connected to another terminal of the first field-effect transistor; and a third field-effect transistor including a concentrated p-type gate, wherein one terminal of the third field-effect transistor is connected to another terminal of the second field-effect transistor; wherein a gate of the first field-effect transistor is connected to a part where the first and the second field-effect transistors are connected, each substrate gate of the first and the third field-effect transistors is connected to a ground voltage, a gate and a substrate gate of the second field-effect transistor and a gate of the third field-effect

Abstract: A reference voltage generating circuit for producing a predetermined reference voltage at an output node includes a depletion-type n-channel field-effect transistor serving as a first field-effect transistor having one node thereof coupled to a power supply voltage, a second field-effect transistor having one node thereof coupled to another node of the first field-effect transistor and having a highly-doped n-type gate, and a third field-effect transistor having one node thereof coupled to another node of the second field-effect transistor, another node thereof coupled to a ground voltage, and a highly-doped p-type gate.

Abstract: A reference voltage generator includes a first field effect transistor with n-type heavily doped gate structure and a second field effect transistor with p-type heavily doped gate structure. The first transistor is configured to have a gate and a substrate gate connected to ground, one terminal connected to a voltage supply, and another terminal connected to an output node. The second transistor is configured to have a gate and one terminal connected to the output node, and a substrate gate and another terminal connected to ground. The output node outputs a given reference voltage when voltage is supplied from the voltage supply. A voltage regulator that generates a constant voltage based on a given reference voltage incorporates the reference voltage generator.

Abstract: A reference voltage generating circuit for producing a predetermined reference voltage at an output node includes a depletion-type n-channel field-effect transistor serving as a first field-effect transistor having one node thereof coupled to a power supply voltage, a second field-effect transistor having one node thereof coupled to another node of the first field-effect transistor and having a highly-doped n-type gate, and a third field-effect transistor having one node thereof coupled to another node of the second field-effect transistor, another node thereof coupled to a ground voltage, and a highly-doped p-type gate.

Abstract: A disclosed reference-voltage generating circuit includes a supply voltage adjusting circuit for adjusting an external supply voltage Vcc and outputting predetermined constant voltages VA and VB; a first voltage supply circuit for generating a voltage Vpn that has a negative temperature coefficient by using the voltage VA; and a second voltage supply circuit for generating a voltage Vptat that has a positive temperature coefficient by using the voltage VB, and for generating the reference voltage Vref, which does not have a temperature coefficient, by adding Vpn and Vptat and thereby canceling the temperature coefficients.

Abstract: A circuit for generating a constant current includes a reference voltage generating circuit configured to generate a reference voltage and a constant current circuit including one or more resistors configured to determine an amount of an electric current generated in response to the reference voltage, the one or more resistors being formed of a metal thin film.

Abstract: A reference voltage generation circuit includes: a first field-effect transistor that is an n channel-type field-effect transistor of a depletion-type, wherein one terminal of the first field-effect transistor is connected to a predetermined power source voltage; a second field-effect transistor including a concentrated n-type gate, wherein one terminal of the second field-effect transistor is connected to another terminal of the first field-effect transistor; and a third field-effect transistor including a concentrated p-type gate, wherein one terminal of the third field-effect transistor is connected to another terminal of the second field-effect transistor; wherein a gate of the first field-effect transistor is connected to a part where the first and the second field-effect transistors are connected, each substrate gate of the first and the third field-effect transistors is connected to a ground voltage, a gate and a substrate gate of the second field-effect transistor and a gate of the third field-effect

Abstract: A reference voltage generating circuit for producing a predetermined reference voltage at an output node includes a depletion-type n-channel field-effect transistor serving as a first field-effect transistor having one node thereof coupled to a power supply voltage, a second field-effect transistor having one node thereof coupled to another node of the first field-effect transistor and having a highly-doped n-type gate, and a third field-effect transistor having one node thereof coupled to another node of the second field-effect transistor, another node thereof coupled to a ground voltage, and a highly-doped p-type gate.

Abstract: A disclosed reference-voltage generating circuit includes a supply voltage adjusting circuit for adjusting an external supply voltage Vcc and outputting predetermined constant voltages VA and VB; a first voltage supply circuit for generating a voltage Vpn that has a negative temperature coefficient by using the voltage VA; and a second voltage supply circuit for generating a voltage Vptat that has a positive temperature coefficient by using the voltage VB, and for generating the reference voltage Vref, which does not have a temperature coefficient, by adding Vpn and Vptat and thereby canceling the temperature coefficients.

Abstract: A temperature sensor comprises (a) a first voltage generating circuit that generates and outputs a first voltage having a positive or negative temperature coefficient in proportion to the absolute temperature; (b) a second voltage generating circuit that generates a second voltage having an opposite sign of temperature coefficient compared to the first voltage and outputs a reference voltage that does not have a temperature coefficient based on the second voltage; and (c) a comparator that compares the first voltage output from the first voltage generating circuit with the reference voltage output from the second voltage generating circuit.

Abstract: A disclosed reference-voltage generating circuit includes a supply voltage adjusting circuit for adjusting an external supply voltage Vcc and outputting predetermined constant voltages VA and VB; a first voltage supply circuit for generating a voltage Vpn that has a negative temperature coefficient by using the voltage VA; and a second voltage supply circuit for generating a voltage Vptat that has a positive temperature coefficient by using the voltage VB, and for generating the reference voltage Vref, which does not have a temperature coefficient, by adding Vpn and Vptat and thereby canceling the temperature coefficients.

Abstract: A temperature sensor comprises (a) a first voltage generating circuit that generates and outputs a first voltage having a positive or negative temperature coefficient in proportion to the absolute temperature; (b) a second voltage generating circuit that generates a second voltage having an opposite sign of temperature coefficient compared to the first voltage and outputs a reference voltage that does not have a temperature coefficient based on the second voltage; and (c) a comparator that compares the first voltage output from the first voltage generating circuit with the reference voltage output from the second voltage generating circuit.

Abstract: A circuit for generating a constant current includes a reference voltage generating circuit configured to generate a reference voltage and a constant current circuit including one or more resistors configured to determine an amount of an electric current generated in response to the reference voltage, the one or more resistors being formed of a metal thin film.

Abstract: A reference voltage generating circuit includes a resistance dividing circuit formed with resistors connected in series.

Abstract: A temperature sensor comprises (a) a first voltage generating circuit that generates and outputs a first voltage having a positive or negative temperature coefficient in proportion to the absolute temperature; (b) a second voltage generating circuit that generates a second voltage having an opposite sign of temperature coefficient compared to the first voltage and outputs a reference voltage that does not have a temperature coefficient based on the second voltage; and (c) a comparator that compares the first voltage output from the first voltage generating circuit with the reference voltage output from the second voltage generating circuit.