Abstract: A moving mechanism relatively moves a machining head emitting a laser beam, with respect to a sheet metal along a surface of the sheet metal. A beam vibrating mechanism vibrates the laser beam for irradiation on the sheet metal, while the machining head is relatively moved by the moving mechanism. A machining condition setting section sets pattern selection information to select a vibration pattern of the laser beam by the beam vibrating mechanism, and a parameter to determine a vibrating way in the vibration pattern, in accordance with machining conditions specified for each machining command to machine the sheet metal in a machining program generated to machine the sheet metal, and including a machining velocity of the sheet metal associated with relative movement of the machining head by the moving mechanism.

Abstract: A photodetector according to an embodiment includes: a first semiconductor layer; a porous semiconductor layer disposed on the first semiconductor layer; and at least one photo-sensing element including a second semiconductor layer of a first conductivity type disposed in a region of the porous semiconductor layer and a third semiconductor layer of a second conductivity type disposed on the second semiconductor layer.

Abstract: According to an embodiment, a photon counting CT apparatus includes a scintillator, a photodiode array, a holder, a divider, and an image generator. The scintillator is configured to convert X-rays into light. The array includes first and second pixels. The first pixel includes a photodiode in a first range receiving the light emitted from the scintillator. The photodiode outputs an electrical signal based on the light. The second pixel includes a photodiode in a second range different from the first range. The holder is circuitry configured to hold a value of an electrical signal output by the second pixel. The divider circuitry is configured to count the number of photons of light incident on the first pixel by dividing an integrated value of electrical signals output by the first pixel by the held value. The image generator is circuitry configured to reconstruct an image based on the counted number.

Abstract: A photodetector according to an embodiment includes: a first semiconductor layer of a first conductivity type, including a first surface and a second surface that is opposite to the first surface; a second semiconductor layer of a second conductivity type, disposed on the second surface; and at least one photo-sensing device including a region in the first semiconductor layer, a region in the second semiconductor layer, and a first electrode disposed in a first region of the first surface.

Abstract: According to an embodiment, a radiation measuring apparatus includes a detector, comparators, a threshold controller, counters, and a generator. The detector includes plural detecting elements each configured to convert energy of incident radiation into a first electrical signal. The comparators correspond to the respective detecting elements, each comparator being configured to output a second electrical signal when a level of the corresponding first electrical signal is not less than a threshold. The threshold controller is configured to supply a first value as the threshold to the respective comparators at a first time, and supply a second value as the threshold to the respective comparators at a second time. The counters correspond to the respective comparators, each counter being configured to count the corresponding second electrical signal. The generator is configured to generate a pulse height frequency distribution of the radiation by using counts of the counters.

Abstract: A waveform shaping filter according to an embodiment includes at least one filter stage and a control circuit. The filter stage includes a differentiation signal generation circuit, a proportional signal generation circuit, and an adder circuit. The differentiation signal generation circuit generates a differentiation signal obtained by amplifying a differentiation component of an input signal. The proportional signal generation circuit generates a proportional signal obtained by amplifying the input signal. The adder circuit outputs an output signal obtained by adding the proportional signal and the differentiation signal. The control circuit compares the output signal and a first detection level, detects at least one of an overshoot and an undershoot of the output signal, and controls a time constant of the filter stage, based on a detection result.

Abstract: According to an embodiment, a photon detecting element includes one or more avalanche photodiodes and a circuit. The circuit is connected between cathodes of the one or more avalanche photodiodes and an external power source. The circuit is configured in which a first temperature coefficient representing variation of a setting potential with respect to temperature variation when constant-current driving is performed so that electrical potential of the cathodes becomes equal to the setting potential is substantially the same as a second temperature coefficient representing variation of breakdown voltage of the one or more avalanche photodiodes with respect to temperature variation.

Abstract: A radiation detection apparatus according to an embodiment includes a radiation detector that detects radiation; a first measurer that measures energy of the radiation from the radiation detected by the radiation detector; and a second measurer that measures the number of times that the radiation detector detects the radiation.

Abstract: A pulse detection circuit according to an embodiment includes a conversion circuit, a delay circuit, first and second comparators, a latch, and a generation circuit. The conversion circuit converts an input signal into a thermometer code signal. The delay circuit outputs a delay signal being the thermometer code signal delayed by a predetermined delay time. The first comparator (The second comparator) compares the thermometer code signal with the delay signal and outputs an increase signal (a decrease signal) indicating whether the input signal is larger (smaller) than the input signal before the delay time. Based on the increase signal and the decrease signal, the latch outputs an increase-decrease signal indicating whether the input signal is increasing or decreasing. Based on the thermometer code signal and the increase-decrease signal, the generation circuit generates a pulse detection signal and a pileup detection signal.

Abstract: According to an embodiment, a signal processor includes an integrator, a differentiator, a zero cross detector, a pile-up detector, an event interval detector, a counter, and a creator. The integrator is configured to calculate charge of current from a photoelectric converter for an incident radiation. The differentiator is configured to calculate a differential value of the current. The zero cross detector is configured to detect a zero cross of the differential value. The pile-up detector is configured to detect pile-up of the current based on the zero cross. The event interval detector is configured to detect, based on the zero cross and pile-up, an event interval of the radiation entering. The counter is configured to count, based on the charge and pile-up, the respective numbers of events according to the charge and the event interval. The creator is configured to create histograms for the numbers of events.

Abstract: According to an embodiment, a photon detector includes a photoelectric converter, a voltage supplier, a potential variation detector, and an adjustor. The photoelectric converter performs photoelectric conversion based on an incident photon and outputs current corresponding to number of photons. The voltage supplier supplies a voltage to the photoelectric converter. The potential variation detector detects potential variation of a cathode of the photoelectric converter. The adjustor adjusts a potential of an anode of the photoelectric converter based on the potential variation detected by the potential variation detector so that variation in a potential difference between the cathode and the anode of the photoelectric converter is reduced, and outputs current from the photoelectric converter to the outside.

Abstract: According to an embodiment, a circuit includes a shunt and a controller. The shunt shunts input current into a plurality of current paths. The controller controls a gain of current inputted to the shunt by combining the current that is shunted into the current paths by the shunt in combination corresponding to a first signal from the outside or changing a shunt ratio with which the shunt shunts the current into the current paths corresponding to the first signal.

Abstract: An infrared sensor according to an embodiment includes a housing, a detector, a lid, and a light shielding film. The detector is mounted on the bottom surface of the housing and includes a heat-sensitive pixel region and a reference pixel region. The lid seals the housing and includes a support member and a window member. The support member is bonded to the side surfaces of the housing and has an opening positioned above the heat-sensitive pixel region. The window member is bonded to a surface of the support member on a side of the detector so as to cover the opening. The light shielding film is formed on a surface of the window member on a side of the detector and arranged on an optical path of the infrared rays entering the reference pixel region.

Abstract: According to an embodiment, an image processing method is implemented in an imaging device that includes a microlens array including microlenses, a main lens configured to guide light from a photographic subject to the microlens array, and an image sensor configured to receive the light after passing through the main lens and the microlens array. The method includes: obtaining an image captured by the image sensor; setting, according to an image height, an arrangement of a microlens image of interest and comparison-target microlens images from among microlens images that are included in the image and that are formed by the microlenses; detecting an amount of image shift between the microlens image of interest and each of the comparison-target microlens images by comparing the microlens image of interest with the comparison-target microlens images; and calculating a distance corresponding to the microlens image of interest using the amounts of image shift.

Abstract: According to an embodiment, a signal processing device includes a first integrator, a second integrator, a switcher, and a calculator. The first integrator is configured to integrate a current represented by a reference waveform equivalent to a normal waveform in a case of no pileup phenomenon regarding the current to calculate a first electrical charge. The second integrator is configured to integrate a current output from a photoelectric converter to calculate a second electrical charge. The switcher is configured to, when a pileup phenomenon has occurred, perform switching either to a state in which the first and second electrical charges are output or to a state in which the first electrical charge and a reference charge are output. The calculator is configured to calculate a first difference charge between the first and second electrical charges, and calculate a second difference charge between the first electrical charge and the reference charge.

Abstract: A waveform shaping filter according to one embodiment includes a first resistor, a first transistor, a first capacitor, and a first amplifier. The first resistor includes one end to which a signal current is input and the other end. The first transistor includes a first terminal connected to the other end of the first resistor, a second terminal, and a control terminal. The first capacitor includes one end connected to the other end of the first resistor and the other end. The first amplifier includes an input terminal connected to the one end of the first resistor and an output terminal connected to the control terminal of the first transistor.

Abstract: A liquid crystal optical device includes: a first electrode unit including a first substrate transparent to light, a light-transmitting layer formed on the first substrate, and a first electrode formed on the light-transmitting layer and being transparent to light, the light-transmitting layer including recesses formed on a surface facing the first electrode, arranged in a first direction, and extending in a second direction; a second electrode unit including a second substrate, the second substrate being transparent to light, and two second electrodes formed on the second substrate, the second electrodes being arranged in the second direction and extending along the first direction; a liquid crystal layer located between the first and second electrode units; a first polarizing plate located on an opposite side of the second electrode unit from the liquid crystal layer; and a drive unit that applies voltages to the first and second electrodes.

Abstract: A photodetector according to an embodiment includes: a semiconductor substrate including a first region and a second region adjacent to the first region; at least one light detection cell including a first semiconductor layer disposed in the first region, a second semiconductor layer disposed between the first semiconductor layer and the semiconductor substrate and including a junction portion with the first semiconductor layer, a third semiconductor layer disposed in the semiconductor substrate separately from the second semiconductor layer, a first electrode on the semiconductor substrate and applying a voltage to the first semiconductor layer, and a second electrode on the semiconductor substrate and applying a voltage to the third semiconductor layer; and a light guide disposed in the second region and guiding incident light to be propagated in a first direction to the junction portion between the first semiconductor layer and the second semiconductor layer.

Abstract: A photodetector according to an embodiment includes: a first semiconductor layer; a porous semiconductor layer disposed on the first semiconductor layer; and at least one photo-sensing element including a second semiconductor layer of a first conductivity type disposed in a region of the porous semiconductor layer and a third semiconductor layer of a second conductivity type disposed on the second semiconductor layer.

Abstract: A radiation detection apparatus according to an embodiment includes a radiation detector that detects radiation; a first measurer that measures energy of the radiation from the radiation detected by the radiation detector; and a second measurer that measures the number of times that the radiation detector detects the radiation.