Abstract: A gain adjustment unit constituted by a distribution switch having a control terminal is provided in an input unit of an amplifier circuit. One end of a coupler is connected to an output line of the amplifier circuit, another end of the coupler is connected to an anode of a diode, and a monitor terminal is connected via a low-pass filter to a cathode of the diode. The anode of the diode is unbiased.

Abstract: An embodiment differential amplifier circuit includes an amplifier section including differential pair transistors to which a differential signal is input and a tail current circuit made up of a short stub provided between a ground terminal of the amplifier section and a ground. In an embodiment, an electrical length of the short stub is shorter than a quarter wavelength of an operation frequency of the differential amplifier circuit.

Abstract: This secondary battery includes a tubular battery body and a cover member containing the battery body. The cover member includes a tubular body at least covering a side surface of the battery body and a bottom which at least part of a bottom surface of the battery body contacts. The bottom includes an expansion expanded in a direction away from the bottom surface of the battery body, and an end surface of the expansion contacts the insulating plate. The area of the end surface of the expansion is smaller than the area of the bottom surface of the battery body.

Abstract: This secondary battery includes a tubular battery body and a cover member containing the battery body. The cover member includes a tubular body at least covering a side surface of the battery body and a bottom which at least part of a bottom surface of the battery body contacts. The bottom includes an expansion expanded in a direction away from the bottom surface of the battery body, and an end surface of the expansion contacts the insulating plate. The area of the end surface of the expansion is smaller than the area of the bottom surface of the battery body.

Abstract: In a semiconductor device provided with a plurality of standard cells each comprising an input terminal and MOS transistors, a diffused region having a substantially negligibly small resistance is formed in a semiconductor substrate, and the input terminal of the standard cell and gates of the MOS transistors are connected through the diffused region. Also, a diffused region is formed under the input terminal in the substrate, and the input terminal is connected to the diffused region. In a modification, another standard cell is formed by forming a diffused region and a metal layer connected to the diffused region on the substrate, and the another standard cell is connected to the input terminal.

Abstract: In a semiconductor device provided with a plurality of standard cells each comprising an input terminal and MOS transistors, a diffused region having a substantially negligibly small resistance is formed in a semiconductor substrate, and the input terminal of the standard cell and gates of the MOS transistors are connected through the diffused region. Also, a diffused region is formed under the input terminal in the substrate, and the input terminal is connected to the diffused region. In a modification, another standard cell is formed by forming a diffused region and a metal layer connected to the diffused region on the substrate, and the another standard cell is connected to the input terminal.