Patents by Inventor Hideyuki Noshiro
Hideyuki Noshiro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20090236581Abstract: A resistance memory element which memorizes a high resistance state and a low resistance state and is switched between the high resistance state and the low resistance state by an application of a voltage includes a first electrode layer of titanium nitride film, a resistance memory layer formed on the first electrode layer and formed of titanium oxide having a crystal structure of rutile phase, and a second electrode layer formed on the resistance memory layer.Type: ApplicationFiled: May 28, 2009Publication date: September 24, 2009Applicant: FUJITSU LIMITEDInventors: Chikako Yoshida, Hideyuki Noshiro, Takashi Iiduka
-
Publication number: 20090230391Abstract: A method for manufacturing a resistance storage element includes forming a lower electrode layer over a semiconductor substrate, forming a transition metal film over the lower electrode layer, forming an upper electrode layer over the transition metal film, and supplying oxygen contained in the lower electrode layer or the upper electrode layer to oxidize the transition metal film.Type: ApplicationFiled: March 9, 2009Publication date: September 17, 2009Applicant: FUJITSU LIMITEDInventor: Hideyuki Noshiro
-
Patent number: 7038264Abstract: A first interlayer insulation film is formed, on which a SiO2 cap film is then formed, and degassing of moisture in the first interlayer insulation film and the SiO2 cap film is preformed by heat treatment. Then, an Al2O3 film is formed on the SiO2 cap film. Subsequently, heat treatment is performed on the Al2O3 in an oxidation atmosphere, thereby accelerating oxidation of its surface. Thereafter, on the Al2O3 film, a platinum film, a PLZT film, and an IrO2 film are formed and patterned, thereby forming a ferroelectric capacitor including an upper electrode, a capacity insulation film, and a lower electrode.Type: GrantFiled: June 2, 2004Date of Patent: May 2, 2006Assignee: Fujitsu LimitedInventors: Katsuyoshi Matsuura, Hideyuki Noshiro, Aki Dote
-
Patent number: 7029984Abstract: A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer. The film deposition temperature of the first film deposition process is set to at least 600° C.Type: GrantFiled: May 25, 2005Date of Patent: April 18, 2006Assignee: Fujitsu LimitedInventors: Yoshimasa Horii, Masaaki Nakabayashi, Masaki Kurasawa, Kou Nakamura, Kazuaki Takai, Hideyuki Noshiro, Shigeyoshi Umemiya
-
Publication number: 20050215006Abstract: A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer. The film deposition temperature of the first film deposition process is set to at least 600° C.Type: ApplicationFiled: May 25, 2005Publication date: September 29, 2005Applicant: FUJITSU LIMITEDInventors: Yoshimasa Horii, Masaaki Nakabayashi, Masaki Kurasawa, Kou Nakamura, Kazuaki Takai, Hideyuki Noshiro, Shigeyoshi Umemiya
-
Publication number: 20050161716Abstract: A first interlayer insulation film is formed, on which a SiO2 cap film is then formed, and degassing of moisture in the first interlayer insulation film and the SiO2 cap film is preformed by heat treatment. Then, an Al2O3 film is formed on the SiO2 cap film. Subsequently, heat treatment is performed on the Al2O3 in an oxidation atmosphere, thereby accelerating oxidation of its surface. Thereafter, on the Al2O3 film, a platinum film, a PLZT film, and an IrO2 film are formed and patterned, thereby forming a ferroelectric capacitor including an upper electrode, a capacity insulation film, and a lower electrode.Type: ApplicationFiled: June 2, 2004Publication date: July 28, 2005Applicant: FUJITSU LIMITEDInventors: Katsuyoshi Matsuura, Hideyuki Noshiro, Aki Dote
-
Patent number: 6812041Abstract: Provided is a method of manufacturing a ferroelectric capacitor capable of manufacturing a ferroelectric capacitor with lower unevenness on a ferroelectric film surface, and thereby with excellent electric characteristics. By sputtering method, a PZT film is formed on a first conductive film, which constitutes a lower electrode of the ferroelectric capacitor. Thereafter, the PZT film is subjected to crystallization treatment (annealing). Next, a silicate solution is coated on the PZT film as a sintering assistance and then dried. Subsequently, sintering treatment is performed at the temperature of about 700° C. In this way, crystals constituting the PZT film are sintered, unevenness on the surface of PZT film is reduced, and tiny pores in grain boundaries are also reduced.Type: GrantFiled: June 10, 2003Date of Patent: November 2, 2004Assignee: Fujitsu LimitedInventors: Kazuaki Kondo, Hideyuki Noshiro
-
Patent number: 6777287Abstract: A ferroelectric random access memory has a ferroelectric capacitor formed of a stacking of a lower electrode, a PZT film and an upper electrode of SrRuO3, wherein the PZT film includes pinholes, with a pinhole density of about 17 &mgr;m2 or less.Type: GrantFiled: May 23, 2003Date of Patent: August 17, 2004Assignee: Fujitsu LimitedInventors: Soichiro Ozawa, Shan Sun, Hideyuki Noshiro, George Hickert, Katsuyoshi Matsuura, Fan Chu, Takeyasu Saito
-
Publication number: 20030232479Abstract: Provided is a method of manufacturing a ferroelectric capacitor capable of manufacturing a ferroelectric capacitor with lower unevenness on a ferroelectric film surface, and thereby with excellent electric characteristics. By sputtering method, a PZT film is formed on a first conductive film, which constitutes a lower electrode of the ferroelectric capacitor. Thereafter, the PZT film is subjected to crystallization treatment (annealing). Next, a silicate solution is coated on the PZT film as a sintering assistance and then dried. Subsequently, sintering treatment is performed at the temperature of about 700C.°. In this way, crystals constituting the PZT film are sintered, unevenness on the surface of PZT film is reduced, and tiny pores in grain boundaries are also reduced.Type: ApplicationFiled: June 10, 2003Publication date: December 18, 2003Applicant: FUJITSU LIMITEDInventors: Kazuaki Kondo, Hideyuki Noshiro
-
Publication number: 20030205743Abstract: A ferroelectric random access memory has a ferroelectric capacitor formed of a stacking of a lower electrode, a PZT film and an upper electrode of SrRuO3, wherein the PZT film includes pinholes, with a pinhole density of about 17 &mgr;m2 or less.Type: ApplicationFiled: May 23, 2003Publication date: November 6, 2003Inventors: Soichiro Ozawa, Shan Sun, Hideyuki Noshiro, George Hickert, Katsuyoshi Matsuura, Fan Chu, Takeyasu Saito
-
Patent number: 6617626Abstract: A ferroelectric random access memory has a ferroelectric capacitor formed of a stacking of a lower electrode, a PZT film and an upper electrode of SrRuO3, wherein the PZT film includes pinholes, with a pinhole density of about 17/&mgr;m2 or less.Type: GrantFiled: February 28, 2001Date of Patent: September 9, 2003Assignee: Fujitsu LimitedInventors: Soichiro Ozawa, Shan Sun, Hideyuki Noshiro, George Hickert, Katsuyoshi Matsuura, Fan Chu, Takeyasu Saito
-
Patent number: 6515843Abstract: The present invention relates to semiconductor techniques using high dielectric oxides, more specifically to a thin film forming method for forming a thin film which is suitable as the electrodes of the oxide high dielectrics, a capacitor device using the oxide high dielectrics and a method for fabricating the same, an a semiconductor device using the capacitor device and a method for fabricating the semiconductor device. The capacitor device includes at least one of a pair of electrodes which is formed of a material containing titanium nitride of (200) orientation. This permits the capacitor device to have good quality even in a case that the capacitor dielectric film is formed of a high dielectric thin film grown in an oxidizing atmosphere. The capacitor device includes the electrodes of titanium nitride film, whereby the electrodes can be patterned by RIE, which much improves processing precision of the electrode patterning, and throughputs.Type: GrantFiled: October 2, 1998Date of Patent: February 4, 2003Assignee: Fujitsu LimitedInventors: Masaaki Nakabayashi, Tetsuro Tamura, Hideyuki Noshiro
-
Patent number: 6495412Abstract: A semiconductor device having a ferroelectric capacitor is formed by the steps of forming a lower electrode on a substrate, applying a rapid thermal annealing process to the lower electrode, depositing, after the step of rapid thermal annealing process, a ferroelectric film on the lower electrode, crystallizing the ferroelectric film by applying a thermal annealing process to the ferroelectric film, and forming an upper electrode on the ferroelectric insulation film.Type: GrantFiled: September 10, 1999Date of Patent: December 17, 2002Assignee: Fujitsu LimitedInventors: Sha Zhu, Hideyuki Noshiro, Kazuaki Takai, Hideaki Yamauchi
-
Publication number: 20020158278Abstract: A ferroelectric random access memory has a ferroelectric capacitor formed of a stacking of a lower electrode, a PZT film and an upper electrode of SrRuO3, wherein the PZT film includes pinholes, with a pinhole density of about 17/&mgr;m2 or less.Type: ApplicationFiled: February 28, 2001Publication date: October 31, 2002Inventors: Soichiro Ozawa, Shan Sun, Hideyuki Noshiro, George Hickert, Katsuyoshi Matsuura, Fan Chu, Takeyasu Saito
-
Publication number: 20020071239Abstract: The present invention relates to semiconductor techniques using high dielectric oxides, more specifically to a thin film forming method for forming a thin film which is suitable as the electrodes of the oxide high dielectrics, a capacitor device using the oxide high dielectrics and a method for fabricating the same, an a semiconductor device using the capacitor device and a method for fabricating the semiconductor device. The capacitor device comprises at least one of a pair of electrodes which is formed of a material containing titanium nitride of (200) orientation. This permits the capacitor device to have good quality even in a case that the capacitor dielectric film is formed of a high dielectric thin film grown in an oxidizing atmosphere. The capacitor device includes the electrodes of titanium nitride film, whereby the electrodes can be patterned by RIE, which much improves processing precision of the electrode patterning, and throughputs.Type: ApplicationFiled: October 2, 1998Publication date: June 13, 2002Inventors: MASAAKI NAKABAYASHI, TETSURO TAMURA, HIDEYUKI NOSHIRO
-
Patent number: 6291291Abstract: The present invention is a semiconductor device having a capacitor employing ferroelectrics as a capacitor insulating film. The semiconductor device comprises a semiconductor substrate 11, an insulating film 12 formed on the semiconductor substrate 11, and a capacitor including (a) a lower electrode formed on the insulating film and made of a refractory metal whose face orientation (111) appears on an upper surface thereof, (b) a capacitor insulating film formed on the lower electrode and made of at least two layers consisting of a ferroelectrics film including Pb having a face orientation (111) and a ferroelectrics film including Pb having a face orientation (100), and (c) an upper electrode 15 formed on the capacitor insulating film 14.Type: GrantFiled: April 10, 2000Date of Patent: September 18, 2001Assignee: Fujitsu LimitedInventor: Hideyuki Noshiro
-
Patent number: 6271077Abstract: The present invention relates to semiconductor techniques using high dielectric oxides, more specifically to a thin film forming method for forming a thin film which is suitable as the electrodes of the oxide high dielectrics, a capacitor device using the oxide high dielectrics and a method for fabricating the same, an a semiconductor device using the capacitor device and a method for fabricating the semiconductor device. The capacitor device comprises at least one of a pair of electrodes which is formed of a material containing titanium nitride of (200) orientation. This permits the capacitor device to have good quality even in a case that the capacitor dielectric film is formed of a high dielectric thin film grown in an oxidizing atmosphere. The capacitor device includes the electrodes of titanium nitride film, whereby the electrodes can be patterned by RIE, which much improves processing precision of the electrode patterning, and throughputs.Type: GrantFiled: November 4, 1999Date of Patent: August 7, 2001Assignee: Fujitsu LimitedInventors: Masaaki Nakabayashi, Tetsuro Tamura, Hideyuki Noshiro
-
Patent number: 6060736Abstract: The present invention is a semiconductor device having a capacitor employing ferroelectrics as a capacitor insulating film. The semiconductor device comprises a semiconductor substrate 11, an insulating film 12 formed on the semiconductor substrate 11, and a capacitor including (a) a lower electrode formed on the insulating film and made of a refractory metal whose face orientation (111) appears on an upper surface thereof, (b) a capacitor insulating film formed on the lower electrode and made of at least two layers consisting of a ferroelectrics film including Pb having a face orientation (111) and a ferroelectrics film including Pb having a face orientation (100), and (c) an upper electrode 15 formed on the capacitor insulating film 14.Type: GrantFiled: July 29, 1998Date of Patent: May 9, 2000Assignee: Fujitsu LimitedInventor: Hideyuki Noshiro
-
Patent number: 5874364Abstract: The present invention relates to semiconductor techniques using high dielectric oxides, more specifically to a thin film forming method for forming a thin film which is suitable as the electrodes of the oxide high dielectrics, a capacitor device using the oxide high dielectrics and a method for fabricating the same, an a semiconductor device using the capacitor device and a method for fabricating the semiconductor device. The capacitor device comprises at least one of a pair of electrodes which is formed of a material containing titanium nitride of (200) orientation. This permits the capacitor device to have good quality even in a case that the capacitor dielectric film is formed of a high dielectric thin film grown in an oxidizing atmosphere. The capacitor device includes the electrodes of titanium nitride film, whereby the electrodes can be patterned by RIE, which much improves processing precision of the electrode patterning, and throughputs.Type: GrantFiled: March 26, 1996Date of Patent: February 23, 1999Assignee: Fujitsu LimitedInventors: Masaaki Nakabayashi, Tetsuro Tamura, Hideyuki Noshiro
-
Patent number: 5679213Abstract: A method for patterning a metal film comprises a process of removing a part of the metal film not covered with the mask by means of a dry etching method using argon gas and one of a gas containing an element to make a reactive product of the metal film to be wet-etched, and then removing the reactive product which has adhered to the metal film by means of an organic solvent.Type: GrantFiled: August 9, 1994Date of Patent: October 21, 1997Assignee: Fujitsu LimitedInventor: Hideyuki Noshiro