Abstract: A method includes preparing a wafer including a substrate and a semiconductor structure, and irradiating an inner portion of the substrate at a predetermined depth in a thickness direction a plurality of times with laser pulses at a first time interval and a predetermined distance interval between irradiations. Each irradiation performed at the first time intervals in the step of irradiating the substrate with laser pulses includes irradiating the substrate at a first focal position in the thickness direction with a first laser pulse having a first pulse-energy; and after irradiating with the first laser pulse, irradiating the substrate with a second laser pulse performed after a second time interval, the second time interval being shorter than the first time interval and being in a range of 3 ps to 900 ps, and the second laser pulse having a second pulse-energy 0.5 to 1.5 times the first pulse-energy.

Abstract: A method includes preparing a wafer including a substrate and a semiconductor structure, and irradiating an inner portion of the substrate at a predetermined depth in a thickness direction a plurality of times with laser pulses at a first time interval and a predetermined distance interval between irradiations. Each irradiation performed at the first time intervals in the step of irradiating the substrate with laser pulses includes irradiating the substrate at a first focal position in the thickness direction with a first laser pulse having a first pulse-energy; and after irradiating with the first laser pulse, irradiating the substrate with a second laser pulse performed after a second time interval, the second time interval being shorter than the first time interval and being in a range of 3 ps to 900 ps, and the second laser pulse having a second pulse-energy 0.5 to 1.5 times the first pulse-energy.

Abstract: A film thickness measuring device including: a terahertz wave generator; a prism that has an entrance surface, an abutment surface capable of abutting a surface of a sample including a first film on a side where the first film is formed, and an emission surface; a terahertz wave detector that detects an S-polarization component and a P-polarization component of a reflected wave from the sample, emitted from the emission surface of the prism; and a control section configured to determine a thickness of the first film formed in the sample, based on a difference between a time waveform of the S-polarization component of the reflected wave and a time waveform of the P-polarization component of the reflected wave.

Abstract: A film thickness measuring device including: a terahertz wave generator; a prism that has an entrance surface, an abutment surface capable of abutting a surface of a sample including a first film on a side where the first film is formed, and an emission surface; a terahertz wave detector that detects an S-polarization component and a P-polarization component of a reflected wave from the sample, emitted from the emission surface of the prism; and a control section configured to determine a thickness of the first film formed in the sample, based on a difference between a time waveform of the S-polarization component of the reflected wave and a time waveform of the P-polarization component of the reflected wave.

Abstract: The coating film inspection apparatus according to one embodiment of the present invention comprises a terahertz-wave generator that generates a terahertz-wave; an irradiation optical system that irradiates, with the terahertz-wave, a sample with a film formed thereon; a terahertz-wave detector that detects a terahertz-wave reflected at the sample; and a control unit that shows an electric field intensity of the detected terahertz-wave in wave form data on a time axis to detect a plurality of peaks from the wave form data, and also calculates film thickness on the basis of time difference between peaks.

Abstract: A terahertz wave generation device is provided with an ultra-short pulse laser light source (3) for generating ultra-short pulse laser light at a single repeating frequency and optical fibers (F1 to F5) for respective transmitting and projecting of the ultra-short pulse laser light to an LN crystal (15). Projection units (13) of the optical fibers (F1 to F5) are made parallel to irradiate the ultra-short pulse laser light (L) projected from the projection units (13), respectively, on terahertz transmission line (A) in the LN crystal (15) with sequential delays. The optical lengths of the transmission paths of the optical fibers (F1 to F5) are set longer as the transmission paths go closer to one side of the parallel direction of the projection units (13).

Abstract: A non-contacting type paint film thickness measuring device includes a generating portion for generating a terahertz pulse light, a detecting portion for detecting the terahertz pulse light, a measured wave form in time-series obtaining portion for obtaining a measured wave form indicating an electric field intensity of a terahertz echo pulse light, and an intrinsic wave form in time-series obtaining portion, having an intrinsic electric field spectrum calculating portion and an intrinsic wave form in time-series calculating portion, for calculating an intrinsic wave form in time-series of an object.

Abstract: The coating film inspection apparatus according to one embodiment of the present invention comprises a terahertz-wave generator that generates a terahertz-wave; an irradiation optical system that irradiates, with the terahertz-wave, a sample with a film formed thereon; a terahertz-wave detector that detects a terahertz-wave reflected at the sample; and a control unit that shows an electric field intensity of the detected terahertz-wave in wave form data on a time axis to detect a plurality of peaks from the wave form data, and also calculates film thickness on the basis of time difference between peaks.

Abstract: A terahertz wave generation device is provided with an ultra-short pulse laser light source (3) for generating ultra-short pulse laser light at a single repeating frequency and optical fibers (F1 to F5) for respective transmitting and projecting of the ultra-short pulse laser light to an LN crystal (15). Projection units (13) of the optical fibers (F1 to F5) are made parallel to irradiate the ultra-short pulse laser light (L) projected from the projection units (13), respectively, on terahertz transmission line (A) in the LN crystal (15) with sequential delays. The optical lengths of the transmission paths of the optical fibers (F1 to F5) are set longer as the transmission paths go closer to one side of the parallel direction of the projection units (13).

Abstract: Noncontact film thickness measurement device includes an ultra short light pulse light source generating a repetitive ultra short light pulse laser, of which wavelength is in an area from visible region to near-infrared region, a light dividing device for dividing the ultra short light pulse laser into a pump light and a probe light, a light retarding device for controlling to retard the time of either one of the pump light and the probe light, a terahertz wave pulse generating device for generating a terahertz wave pulse by inputting the pump light and generating the terahertz wave pulse in a coaxial direction relative to a remaining pump light outputted without being used for generation of the terahertz wave pulse in the pump light, a light incident optical system for inputting the terahertz wave pulse to an object of which film thickness is to be measured, a light receiving optical system for receiving a terahertz echo pulse reflected from the object by inputting the terahertz wave pulse and a detecting de

Abstract: A non-contacting type paint film thickness measuring device includes a paint film thickness measuring unit having a terahertz pulse light generating portion for generating a terahertz pulse light, a first optical system for collimating and focusing an incident terahertz pulse light that is the terahertz pulse light generated by the terahertz pulse light generating portion to an object whose paint film thickness is measured, a second optical system for receiving a terahertz echo pulse that is the incident terahertz pulse light collimated and focused to the object in the first optical system and reflected at the object, a pulse width shortening portion for shortening a pulse width of the terahertz echo pulse, and a detecting portion for detecting electric field amplitude-time resolved waveform of the terahertz echo pulse whose pulse width is shortened by the pulse width shortening portion.

Abstract: A non-contacting type paint film thickness measuring device includes a generating portion for generating a terahertz pulse light, a detecting portion for detecting the terahertz pulse light, a measured wave form in time-series obtaining portion for obtaining a measured wave form indicating an electric field intensity of a terahertz echo pulse light, and an intrinsic wave form in time-series obtaining portion, having an intrinsic electric field spectrum calculating portion and an intrinsic wave form in time-series calculating portion, for calculating an intrinsic wave form in time-series of an object.

Abstract: A terahertz wave generating apparatus includes an excitation light source for outputting an excitation light at a predetermined wavelength, an optical crystal being excited by an irradiation with the excitation light in order to generate a terahertz wave and terahertz wave amplifying means for repeatedly performing an optical parametric amplification for the terahertz wave by use of the excitation light, wherein the terahertz wave amplifying means includes an optical waveguide having the optical crystal serving as a core and a medium serving as a clad whose refractive index is smaller than a refractive index of the optical crystal, and the inputted excitation light is propagated within the optical waveguide with fulfilling a condition for a total reflection.

Abstract: A method of examining a configuration of a sample includes the step of irradiating a terahertz pulsed light, which possesses a wavelength to transmit through the sample, to at least two different portions of the sample, the step of detecting at least two electric field amplitude-time resolved waveforms of the terahertz pulsed light transmitted through the first and second portions of the object to be examined, and the step of examining the configuration of the sample based upon phase information obtained from the electric field amplitude-time resolved waveforms detected.

Abstract: A reflection-type terahertz spectrometer includes an input optical path through which terahertz waves are propagated, an irradiating mechanism that irradiates a sample with terahertz waves propagated through the input optical path, an output optical path through which terahertz waves exiting from the irradiating mechanism are propagated, and a detector that receives and detects the terahertz waves propagated through the output optical path. The irradiating mechanism has at least one planar interface and a refractive index greater than that of a peripheral region contacting the planar interface and is disposed between the input optical path and the output optical path such that the terahertz waves propagated through the input optical path to be incident on the planar interface undergo total internal reflection at the planar interface, and the sample is disposed in the peripheral region contacting the planar interface of the irradiating mechanism.

Abstract: It comprises a voltage-application apparatus 2 for applying a predetermined voltage to a semiconductor device 1, and holding it therein; a laser apparatus 3 for generating a laser beam 4 having a predetermined wavelength; an irradiation apparatus 5 for irradiating the laser beam 4 onto the two-dimensional circuit of the semiconductor device 1, which is held in the applied state, so as to scan it two-dimensionally; an electromagnetic-wave detection/conversion apparatus 6 for detecting an electromagnetic wave, which is radiated from the laser-beam irradiation position, and converting the electromagnetic wave into an electric-field signal, which changes temporally; and phase-judgement means 71, to which the temporally-changing electric-field signal output from the detection/conversion apparatus 6 is input, for judging the phase of the electric-field signal.

Abstract: A method of examining a configuration of a sample includes the step of irradiating a terahertz pulsed light, which possesses a wavelength to transmit through the sample, to at least two different portions of the sample, the step of detecting at least two electric field amplitude-time resolved waveforms of the terahertz pulsed light transmitted through the first and second portions of the object to be examined, and the step of examining the configuration of the sample based upon phase information obtained from the electric field amplitude-time resolved waveforms detected.

Abstract: A method for measuring a spectrum of a terahertz pulse includes generating a terahertz pulse using an ultrashort pulsed pumping light, generating a white light pulse using an ultrashort pulsed probe light, stretching and chirping the white light pulse modulating the chirped white light pulse such that the terahertz pulse and the chirped white light pulse irradiate into an electro-optic crystal synchronously, so that the chirped white light pulse is modulated by an electric field signal induced at the electro-optic crystal irradiated by the terahertz pulse, detecting a spectrum of chirped white light pulse modulated at the electro-optic modulating step by a multi-channeled detector, analyzing an electric field of the teraherz pulse irradiated to the electro-optic crystal from the spectrum of the chirped white light pulse detected by the multi-channeled spectrum detecting step, and transforming the analyzed electric field signal into a frequency spectrum of the terahertz pulse.

Abstract: A terahertz wave-generating semiconductor crystal includes a zincblende-type III-V compound semiconductor crystal that generates terahertz wave pulses upon application of an ultrashort light pulse in the optical communication band serving as a pump beam.

Abstract: It comprises a voltage-application apparatus 2 for applying a predetermined voltage to a semiconductor device 1, and holding it therein; a laser apparatus 3 for generating a laser beam 4 having a predetermined wavelength; an irradiation apparatus 5 for irradiating the laser beam 4 onto the two-dimensional circuit of the semiconductor device 1, which is held in the applied state, so as to scan it two-dimensionally; an electromagnetic-wave detection/conversion apparatus 6 for detecting an electromagnetic wave, which is radiated from the laser-beam irradiation position, and converting the electromagnetic wave into an electric-field signal, which changes temporally; and phase-judgement means 71, to which the temporally-changing electric-field signal output from the detection/conversion apparatus 6 is input, for judging the phase of the electric-field signal.