Abstract: An anti-glare light source including a linear light source, at least one sleeve and a light adjusting element is provided. The linear light source is suitable for providing a light. The sleeve covers at least one end of the linear light source. The light adjusting element is disposed between the sleeve and the linear light source, wherein the light adjusting element includes a plurality of prism portions. The prism portions cover a portion of the linear light source and arrange along the extension direction of the linear light source, such that the distribution of the light converges along the extension direction of the linear light source.

Abstract: A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on a first surface of the substrate by a silicon thin film deposition process. A method of forming a thin film transistor includes following steps. Firstly, a substrate is provided. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on a first surface of the substrate by a silicon thin film deposition process. A first patterning process is performed on the thin film poly silicon layer to form a semiconductor pattern. Subsequently, a gate insulation layer, a gate electrode, a source electrode and a drain electrode are formed.

Abstract: An anti-glare light source including a linear light source, at least one sleeve and a light adjusting element is provided. The linear light source is suitable for providing a light. The sleeve covers at least one end of the linear light source. The light adjusting element is disposed between the sleeve and the linear light source, wherein the light adjusting element includes a plurality of prism portions. The prism portions cover a portion of the linear light source and arrange along the extension direction of the linear light source, such that the distribution of the light converges along the extension direction of the linear light source.

Abstract: A touch-sensitive display device includes a touch-sensitive device, a display device, and an adhesive layer. The display device is disposed on a side of the touch-sensitive device, and the adhesive layer is disposed between the touch-sensitive device and the display device to combine the touch-sensitive device with the display device. A distribution area of the adhesive layer at least overlaps a viewing area of the touch-sensitive display device.

Abstract: A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. A thin film silicon layer is then formed on the substrate by a silicon thin film deposition process. A heating treatment is then applied to the substrate so as to convert the thin film silicon layer into a thin film poly silicon layer. A method of forming a thin film transistor includes following steps. A first patterning process is performed on the thin film poly silicon layer on the substrate to form a semiconductor pattern. Subsequently, a gate insulation layer, a gate electrode, a source electrode and a drain electrode are formed.

Abstract: A touch panel includes a first substrate, a second substrate, an adhesive layer, a first patterned sensing electrode layer and a second patterned sensing electrode layer. The first substrate has a first surface and a second surface, the second substrate has a third surface and a fourth surface, and the second surface of the first substrate faces the third surface of the second substrate. The adhesive layer is disposed between the second surface of the first substrate and the third surface of the second substrate for assembling the first substrate and the second substrate. The first patterned sensing electrode layer is disposed on the first surface of the first substrate, and the second patterned sensing electrode layer is disposed on the fourth surface of the second substrate.

Abstract: An organic light emitting diode (OLED) pixel circuit includes a driving node, a pixel driving unit, an electroluminescent device, and a compensation unit. The pixel driving unit is coupled to a data line receiving a data voltage and provides a driving voltage to the driving node. The display electroluminescent device is coupled to the driving node for illuminating in response to the driving voltage, wherein the level of the driving voltage is related to an aging factor voltage, corresponding to a usage time of the display electroluminescent device. The compensation unit, including a compensation electroluminescent device, is couple to the driving node and drives the compensation electroluminescent device to illuminate in response to the driving voltage, so as to compensate the aging decay of the display electroluminescent device with the electroluminescent compensation unit.

Abstract: A planar display device includes a transparent cover plate and a display unit. The transparent cover plate has an attaching surface. The display unit is fully attached to the attaching surface of the transparent cover plate.

Abstract: A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on a first surface of the substrate by a silicon thin film deposition process. A method of forming a thin film transistor includes following steps. Firstly, a substrate is provided. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on a first surface of the substrate by a silicon thin film deposition process. A first patterning process is performed on the thin film poly silicon layer to form a semiconductor pattern. Subsequently, a gate insulation layer, a gate electrode, a source electrode and a drain electrode are formed.

Abstract: A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. The substrate has a first surface. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on the first surface of the substrate by a silicon thin film deposition process.

Abstract: A light emitting element structure and a circuit thereof are provided. The light emitting element circuit includes a driving unit and a light emitting element. The driving unit is used for generating a driving current at a light emission period. The light emitting element includes a current transferring unit and a light emitting unit. The current transferring unit is connected with the driving unit to transfer the driving current and generate a light emitting current at the light emission period. The light emitting unit is connected with the current transferring unit and emits light in response to the light emitting current. The light emitting unit is connected with the current transferring unit and emits light in response to the light emitting current.