Abstract: The present technology relates to a solid-state imaging device and an electronic device that can expand a dynamic range in a pixel having a high-sensitivity pixel and a low-sensitivity pixel. The solid-state imaging device includes a pixel array unit in which a plurality of pixels is arranged in a two-dimensional manner, in which the pixel includes a first photoelectric conversion unit and a second photoelectric conversion unit having lower sensitivity than the first photoelectric conversion unit, and a size of the second photoelectric conversion unit in an optical axis direction in which light enters is smaller than a size of the first photoelectric conversion unit in the optical axis direction. The present technology can be applied to a backside-illumination CMOS image sensor, for example.

Abstract: The present technology relates to a solid-state imaging device and an electronic device that can expand a dynamic range in a pixel having a high-sensitivity pixel and a low-sensitivity pixel. The solid-state imaging device includes a pixel array unit in which a plurality of pixels is arranged in a two-dimensional manner, in which the pixel includes a first photoelectric conversion unit and a second photoelectric conversion unit having lower sensitivity than the first photoelectric conversion unit, and a size of the second photoelectric conversion unit in an optical axis direction in which light enters is smaller than a size of the first photoelectric conversion unit in the optical axis direction. The present technology can be applied to a backside-illumination CMOS image sensor, for example.

Abstract: Provided is a solid-state imaging device and an electronic device that can expand a dynamic range in a pixel having a high-sensitivity pixel and a low-sensitivity pixel. The solid-state imaging device includes a pixel array unit in which a plurality of pixels is arranged in a two-dimensional manner, in which the pixel includes a first photoelectric conversion unit and a second photoelectric conversion unit having lower sensitivity than the first photoelectric conversion unit, and a size of the second photoelectric conversion unit in an optical axis direction in which light enters is smaller than a size of the first photoelectric conversion unit in the optical axis direction.

Abstract: Provided is a solid-state imaging device and an electronic device that can expand a dynamic range in a pixel having a high-sensitivity pixel and a low-sensitivity pixel. The solid-state imaging device includes a pixel array unit in which a plurality of pixels is arranged in a two-dimensional manner, in which the pixel includes a first photoelectric conversion unit and a second photoelectric conversion unit having lower sensitivity than the first photoelectric conversion unit, and a size of the second photoelectric conversion unit in an optical axis direction in which light enters is smaller than a size of the first photoelectric conversion unit in the optical axis direction.

Abstract: The present technology relates to a solid-state imaging device, a production method, and an electronic apparatus that can prevent sensitivity unevenness from generating. The solid-state imaging device includes a pixel array unit having a plurality of pixels, a microlens formed by laminating a plurality of lens layers for the every pixel, and a film formed between the lens layers with a uniform film thickness having a refractive index lower than a refractive index of the lens layer. The present technology is applicable to an amplification type solid-state imaging device such as a surface irradiation type or rear irradiation type CMOS image sensor, and a charge transfer type solid-state imaging device such as a CCD image sensor.

Abstract: The present technology relates to a solid-state imaging device, a production method, and an electronic apparatus that can prevent sensitivity unevenness from generating. The solid-state imaging device includes a pixel array unit having a plurality of pixels, a microlens formed by laminating a plurality of lens layers for the every pixel, and a film formed between the lens layers with a uniform film thickness having a refractive index lower than a refractive index of the lens layer. The present technology is applicable to an amplification type solid-state imaging device such as a surface irradiation type or rear irradiation type CMOS image sensor, and a charge transfer type solid-state imaging device such as a CCD image sensor.

Abstract: The present technology relates to a solid-state imaging device, a production method, and an electronic apparatus that can prevent sensitivity unevenness from generating. The solid-state imaging device includes a pixel array unit having a plurality of pixels, a microlens formed by laminating a plurality of lens layers for the every pixel, and a film formed between the lens layers with a uniform film thickness having a refractive index lower than a refractive index of the lens layer. The present technology is applicable to an amplification type solid-state imaging device such as a surface irradiation type or rear irradiation type CMOS image sensor, and a charge transfer type solid-state imaging device such as a CCD image sensor.

Abstract: The present technology relates to a solid-state imaging device, a production method, and an electronic apparatus that can prevent sensitivity unevenness from generating. The solid-state imaging device includes a pixel array unit having a plurality of pixels, a microlens formed by laminating a plurality of lens layers for the every pixel, and a film formed between the lens layers with a uniform film thickness having a refractive index lower than a refractive index of the lens layer. The present technology is applicable to an amplification type solid-state imaging device such as a surface irradiation type or rear irradiation type CMOS image sensor, and a charge transfer type solid-state imaging device such as a CCD image sensor.

Abstract: The present technology relates to a solid-state imaging device and an electronic device that can expand a dynamic range in a pixel having a high-sensitivity pixel and a low-sensitivity pixel. The solid-state imaging device includes a pixel array unit in which a plurality of pixels is arranged in a two-dimensional manner, in which the pixel includes a first photoelectric conversion unit and a second photoelectric conversion unit having lower sensitivity than the first photoelectric conversion unit, and a size of the second photoelectric conversion unit in an optical axis direction in which light enters is smaller than a size of the first photoelectric conversion unit in the optical axis direction. The present technology can be applied to a backside-illumination CMOS image sensor, for example.

Abstract: The present technology relates to a solid-state imaging device, a production method, and an electronic apparatus that can prevent sensitivity unevenness from generating. The solid-state imaging device includes a pixel array unit having a plurality of pixels, a microlens formed by laminating a plurality of lens layers for the every pixel, and a film formed between the lens layers with a uniform film thickness having a refractive index lower than a refractive index of the lens layer. The present technology is applicable to an amplification type solid-state imaging device such as a surface irradiation type or rear irradiation type CMOS image sensor, and a charge transfer type solid-state imaging device such as a CCD image sensor.