Abstract: A display driver that receives display line data of plural display lines to perform drive control on a display panel includes a line memory for storing display line data which is supplied from the outside. The display driver includes a logic circuit that controls write and read-out of the display line data in and from the line memory, and sorts pixel data of the display line data using read out data from the line memory, to generate display drive data. Drive circuits drive the display panel in units of display lines based on the drive data which is output from the logic circuit. The drive circuits are separately arranged on both sides of the logic circuit and the line memory which are interposed therebetween. The storage capacity of the line memory corresponds to the number of lines smaller than the number of display lines of a display frame.

Abstract: A display driver that receives display line data of plural display lines to perform drive control on a display panel includes a line memory for storing display line data which is supplied from the outside. The display driver includes a logic circuit that controls write and read-out of the display line data in and from the line memory, and sorts pixel data of the display line data using read out data from the line memory, to generate display drive data. Drive circuits drive the display panel in units of display lines based on the drive data which is output from the logic circuit. The drive circuits are separately arranged on both sides of the logic circuit and the line memory which are interposed therebetween. The storage capacity of the line memory corresponds to the number of lines smaller than the number of display lines of a display frame.

Abstract: The semiconductor IC device for display control disclosed herein aims to achieve a higher rate of memory access cycles without enhancing the current carrying capability of the memory device. The IC device is provided with a memory cell array capable to store display data, peripheral circuits to enable writing and reading of display data, and a control circuit which is able to control read and write operations from/to the memory cell array. The memory cell array comprises a plurality of memory blocks. The control circuit comprises a control logic which enables parallel processing of write operations in such a manner that, before completion of writing of data to one of the memory blocks, writing of data to another memory block is started. Write cycles are shortened by the parallel processing of write operations.

Abstract: A memory cell of a memory array stores two bits. A memory array sense amplifier provides two bits in a verify operation. Two bits in a page buffer stores a write target value for the corresponding memory cell. Each bit in a mask buffer stores a value defining processing to be effected on the corresponding memory cell. A write driver applies a write pulse when the bit in the mask buffer corresponding to the selected memory cell is “0”. A verify circuit compares the two bits provided from the memory array sense amplifier with the corresponding two bits in the page buffer, and changes the corresponding bit in the mask buffer from “0” to “1” when the result of the comparison represents matching.

Abstract: A memory cell of a memory array stores two bits. A memory array sense amplifier provides two bits in a verify operation. Two bits in a page buffer stores a write target value for the corresponding memory cell. Each bit in a mask buffer stores a value defining processing to be effected on the corresponding memory cell. A write driver applies a write pulse when the bit in the mask buffer corresponding to the selected memory cell is “0”. A verify circuit compares the two bits provided from the memory array sense amplifier with the corresponding two bits in the page buffer, and changes the corresponding bit in the mask buffer from “0” to “1” when the result of the comparison represents matching.

Abstract: A memory cell of a memory array stores two bits. A memory array sense amplifier provides two bits in a verify operation. Two bits in a page buffer stores a write target value for the corresponding memory cell. Each bit in a mask buffer stores a value defining processing to be effected on the corresponding memory cell. A write driver applies a write pulse when the bit in the mask buffer corresponding to the selected memory cell is “0”. A verify circuit compares the two bits provided from the memory array sense amplifier with the corresponding two bits in the page buffer, and changes the corresponding bit in the mask buffer from “0” to “1” when the result of the comparison represents matching.

Abstract: The semiconductor IC device for display control disclosed herein aims to achieve a higher rate of memory access cycles without enhancing the current carrying capability of the memory device. The IC device is provided with a memory cell array capable to store display data, peripheral circuits to enable writing and reading of display data, and a control circuit which is able to control read and write operations from/to the memory cell array. The memory cell array comprises a plurality of memory blocks. The control circuit comprises a control logic which enables parallel processing of write operations in such a manner that, before completion of writing of data to one of the memory blocks, writing of data to another memory block is started. Write cycles are shortened by the parallel processing of write operations.

Abstract: A memory cell of a memory array stores two bits. A memory array sense amplifier provides two bits in a verify operation. Two bits in a page buffer stores a write target value for the corresponding memory cell. Each bit in a mask buffer stores a value defining processing to be effected on the corresponding memory cell. A write driver applies a write pulse when the bit in the mask buffer corresponding to the selected memory cell is “0”. A verify circuit compares the two bits provided from the memory array sense amplifier with the corresponding two bits in the page buffer, and changes the corresponding bit in the mask buffer from “0” to “1” when the result of the comparison represents matching.

Abstract: A memory cell of a memory array stores two bits. A memory array sense amplifier provides two bits in a verify operation. Two bits in a page buffer stores a write target value for the corresponding memory cell. Each bit in a mask buffer stores a value defining processing to be effected on the corresponding memory cell. A write driver applies a write pulse when the bit in the mask buffer corresponding to the selected memory cell is “0”. A verify circuit compares the two bits provided from the memory array sense amplifier with the corresponding two bits in the page buffer, and changes the corresponding bit in the mask buffer from “0” to “1” when the result of the comparison represents matching.

Abstract: A memory cell of a memory array stores two bits. A memory array sense amplifier provides two bits in a verify operation. Two bits in a page buffer stores a write target value for the corresponding memory cell. Each bit in a mask buffer stores a value defining processing to be effected on the corresponding memory cell. A write driver applies a write pulse when the bit in the mask buffer corresponding to the selected memory cell is “0”. A verify circuit compares the two bits provided from the memory array sense amplifier with the corresponding two bits in the page buffer, and changes the corresponding bit in the mask buffer from “0” to “1” when the result of the comparison represents matching.