Abstract: A composition for forming a resist underlayer film includes: (A) a cross-linking compound that is represented by formula (I); and (D) a solvent. [In formula (I), m is an integer from 1 to 30, T is a single bond, a saturated hydrocarbon group, an aromatic group, or an unsaturated cyclic hydrocarbon group, G1, G2, G3, G4, G5, and G6 are each independently (i) or (ii), the n's are each independently an integer from 1 to 8, the n R's are each independently a hydrogen atom, an aliphatic hydrocarbon group, or an alicyclic hydrocarbon group, the A's are each independently an aryl group that may be interrupted by an alkylene group, and Z1, Z2, Z3, Z4, Z5, and Z6 are each independently an alkyl group, an aryl group, a hydroxy group, an epoxy group, or a hydrogen atom.

Abstract: A resist underlayer film-forming composition revealing high reflow properties while applying and heating the composition on a substrate, allowing a flat application on a multi-level substrate thus forming a flat film. The composition includes a copolymer having a repeating structural unit of the following Formula (1) and/or a repeating structural unit of the following Formula (2) and an organic solvent: (in Formulae (1) and (2), R1 is a functional group of Formula (3); in Formula (3), Q1 and Q2 are each independently a hydrogen atom or a C1-5 alkyl group, and * is a dangling bond to an oxygen atom; and in Formula (2), X1 is a C1-50 organic group, and i and j are each independently 0 or 1).

Abstract: A composition for forming protective films against aqueous hydrogen peroxide solutions, including: a compound of the following formula (1a) or formula (1b) or a compound having a substituent of the following formula (2) and having a molecular weight of 300 or more and less than 800 or a weight-average molecular weight of 300 or more and less than 800; and a solvent, the composition containing the compound of the formula (1a) or formula (1b) of 0.1% by mass to 60% by mass or the compound having the substituent of the formula (2) of 10% by mass to 100% by mass, relative to solids excluding the solvent: (wherein R1 is a C1-4 alkylene or alkenylene group or a direct bond, k is 0 or 1, m is an integer of 1 to 3, and n is an integer of 2 to 4.

Abstract: A resist underlayer film-forming composition formed into a flat film which can exhibit high etching resistance, a good dry etching velocity ratio and a good optical constant, has a good covering property even against a so-called step-structure substrate, and has a small film thickness difference after being embedded. Also, a method for producing a polymer suitable for the resist underlayer film-forming composition; a resist underlayer film using the resist underlayer film-forming composition; and a method for manufacturing a semiconductor device. A resist underlayer film-forming composition containing a reaction product of an aromatic compound having 6 to 60 carbon atoms with a carbonyl group in a cyclic carbonyl compound having 3 to 60 carbon atoms and a solvent, wherein the reaction product has such a structure that one of the carbon atoms in the cyclic carbonyl compound links two molecules of the aromatic compound to each other.

Abstract: A resist lower layer film formation composition that exhibits a high etching resistance and a good dry-etching rate ratio and optical constant, exhibits good coating performance even on a so-called stepped substrate, produces a small film thickness difference after embedding, and enables a flat film to be formed. Also a method for manufacturing a polymer suitable for the resist lower layer film formation composition, a resist lower layer film in which the formation composition is used, and a method for manufacturing a semiconductor device. A resist lower layer film formation composition containing: a solvent; and a reaction product between an aromatic compound having 6-60 carbon atoms and a carbon-oxygen double bond of an oxygen-containing compound having 3-60 carbon atoms. The oxygen-containing compound has, in one molecule, one partial structure: —CON< or —COO—. In the reaction product, one carbon atom of the oxygen-containing compound links two of the aromatic compounds.

Abstract: A photocurable silicon-containing coating film-forming composition including a hydrolyzable silane, a hydrolysate thereof, or a hydrolytic condensate thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of the following Formula (1): R1aR2bSi(R3)4-(a+b)??Formula (1) (wherein R1 is a functional group relating to photocrosslinking). The photocurable silicon-containing coating film-forming composition, wherein the composition may be for forming a silicon-containing coating film that may be cured by ultraviolet irradiation and may serve as an intermediate layer between a resist film and an organic underlayer film on a substrate in a lithographic process for producing a semiconductor device.

Abstract: A stepped substrate coating composition for forming a coating film having planarity on a substrate, including: a main agent and a solvent, the main agent containing a compound (A), a compound (B), or a mixture thereof, the compound (A) having a partial structure Formula (A-1) or (A-2): and the compound (B) having at least one partial structure selected from Formulae (B-1)-(B-5), or having a partial structure including a combination of a partial structure of Formula (B-6) and a partial structure of Formula (B-7) or (B-8): where the composition is cured by photoirradiation or by heating at 30° C.-300° C.; and the amount of the main agent in the solid content of the composition is 95%-100% by mass.

Abstract: A composition for forming protective film against aqueous hydrogen peroxide solution, composition including resin; compound of following Formula (1a), (1b), or (1c): (wherein X is carbonyl group or methylene group; 1 and m are each independently integer of 0-5 to satisfy relation: 3?1+m?10; n is integer of 2-5; u and v are each independently integer of 0-4 to satisfy relation: 3?u+v?8; R1-R4 are each independently hydrogen atom, hydroxy group, C1-10 hydrocarbon group, or C6-20 aryl group; when R1-R4 are each the C1-10 hydrocarbon group; and j and k are each independently 0 or 1); crosslinking agent and catalyst; and solvent, wherein amount of compound of Formula (1a), (1b), or (1c) is at most 80% by mass relative to amount of resin, and amount of crosslinking agent is 5%-40% by mass relative to amount of resin.

Abstract: A stepped substrate-coating composition having high properties of filling a pattern and capable of forming on a substrate a coating film that can be formed by photocuring, has flattening properties, and has high heat resistance after irradiation with light. A photocurable composition for coating a stepped substrate, the photocurable composition containing a polymer containing a unit structure of Formula (1): wherein A1, A2, and A3 are each independently an aromatic C6-100 ring optionally containing a heteroatom or a hydrocarbon group containing an aromatic C6-100 ring optionally containing a heteroatom, B1, B2, and B3 are each independently Formula (2): wherein R1 is a C1-10 alkylene group, a C1-10 alkenylene group, a C1-10 alkynylene group, a C6-40 arylene group, an oxygen atom, a carbonyl group, a sulfur atom, —C(O)—O—, —C(O)—NRa—, —NRb—, or a group including a combination thereof, R2 is a hydrogen atom or a C1-10 alkyl group.

Abstract: A resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film wherein the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1).

Abstract: A stepped substrate-coating composition having high properties of filling a pattern and capable of forming on a substrate a coating film that can be formed by photocuring, has flattening properties, and has high heat resistance after irradiation with light. A photocurable composition for coating a stepped substrate, the photocurable composition containing a polymer containing a unit structure of Formula (1): wherein A1, A2, and A3 are each independently an aromatic C6-100 ring optionally containing a heteroatom or a hydrocarbon group containing an aromatic C6-100 ring optionally containing a heteroatom, B1, B2, and B3 are each independently Formula (2): wherein R1 is a C1-10 alkylene group, a C1-10 alkenylene group, a C1-10 alkynylene group, a C6-40 arylene group, an oxygen atom, a carbonyl group, a sulfur atom, —C(O)—O—, —C(O)—NRa—, —NRb—, or a group including a combination thereof, R2 is a hydrogen atom or a C1-10 alkyl group.

Abstract: A stepped substrate-coating composition for forming a coating film having filling property of a pattern and flattening property including a compound (E) having a partial structure (I) and a partial structure (II) having a hydroxy group formed by a reaction of an epoxy group with a proton-generating compound, a solvent (F), and a crosslinkable compound (H), wherein the partial structure (I) is from Formulae (1-1) to (1-5) or including a partial structure of Formula (1-6) combined with a partial structure of Formula (1-7) or (1-8), and the partial structure (II) is of the following Formula (2-1) or (2-2), wherein the compound (E) contains the epoxy and hydroxy group at a molar ratio (epoxy group)/(hydroxy group) of 0 or more and 0.5 or less, and contains the partial structure (II) so the molar ratio (partial structure (II))/(partial structure (I)+partial structure (II)) is 0.01 or more and 0.8 or less.

Abstract: A composition for forming protective films against aqueous hydrogen peroxide solutions, including: a compound of the following formula (1a) or formula (1b) or a compound having a substituent of the following formula (2) and having a molecular weight of 300 or more and less than 800 or a weight-average molecular weight of 300 or more and less than 800; and a solvent, the composition containing the compound of the formula (1a) or formula (1b) of 0.1% by mass to 60% by mass or the compound having the substituent of the formula (2) of 10% by mass to 100% by mass, relative to solids excluding the solvent: (wherein R1 is a C1-4 alkylene or alkenylene group or a direct bond, k is 0 or 1, m is an integer of 1 to 3, and n is an integer of 2 to 4.

Abstract: There is provided a composition for forming a protective film against an aqueous hydrogen peroxide solution, the composition comprising a resin; a compound of the following Formula (1a), (1b), or (1c): (wherein X is a carbonyl group or a methylene group; 1 and m are each independently an integer of 0 to 5 so as to satisfy the relation: 3?1+m?10; n is an integer of 2 to 5; u and v are each independently an integer of 0 to 4 so as to satisfy the relation: 3?u+v?8; R1, R2, R3, and R4 are each independently a hydrogen atom, a hydroxy group, a C1-10 hydrocarbon group optionally having at least one hydroxy group as a substituent and optionally having at least one double bond in a main chain, or a C6-20 aryl group optionally having at least one hydroxy group as a substituent; when R1, R2, R3, and R4 are each the C1-10 hydrocarbon group, R1 and R2 optionally form a benzene ring together with a ring carbon atom to which R1 and R2 are bonded, R3 and R4 optionally form a benzene ring together with a ring carbon

Abstract: There are provided a plasma-curable multi-level substrate coating film-forming composition for forming a coating film having planarity on a substrate, wherein the composition can fill a pattern sufficiently.

Abstract: A resist underlayer film-forming composition exhibiting high etching resistance, high heat resistance, and excellent coatability; a resist underlayer film obtained using the resist underlayer film-forming composition and a method for producing the same; a method for forming a resist pattern; and a method for producing a semiconductor device. A resist underlayer film-forming composition including a polymer and a compound represented by Formula (1) as a solvent. In Formula (1), R1, R2, and R3 in Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R1, R2, and R3 may be the same or different and may bond to each other to form a ring structure.

Abstract: A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or sulfur-containing structure, a hydrocarbon structure, and a solvent. A compound which contains at least one photodegradable structure in one molecule. A compound which contains the photodegradable structures, and the hydrocarbon structure in one molecule, or a combination of compounds which contain the structures in separate molecules. The hydrocarbon structure is a saturated or unsaturated, linear, branched or cyclic hydrocarbon group having a carbon atom number of 1 to 40.

Abstract: A resist underlayer film formation composition including a novolak resin that has a repeating unit structure represented by the following formula (1). (In formula (1), groups A and B are organic groups which each have an aromatic ring, a fused aromatic ring, or a fused aromatic heterocycle and have a structure in which two or more mono- or divalent chemical groups selected from the group consisting of chemical groups (a) that cause an increase in mass upon oxidation, groups (b) that form a crosslink upon heating, and groups (c) that induce phase separation during curing have replaced hydrogen atoms on the ring(s) contained in group A and/or B.) The composition further includes a crosslinking agent and an acid and/or acid generator. A production process is provided in which the resist underlayer film formation composition is applied to a semiconductor substrate and burned to obtain a resist underlayer film.

Abstract: A stepped substrate coating composition includes: a compound (E) containing partial structures (I) and (II) and a solvent (F). The partial structure (II) contains a hydroxy group generated by an epoxy group and a proton-generating compound reaction; the partial structure (I) is at least one partial structure selected from partial structures of Formula (1-1) to Formula (1-5) or a partial structure combining a partial structure of Formula (1-6) and Formula (1-7) or Formula (1-8); and the partial structure (II) is a partial structure of Formula (2-1) or Formula (2-2). The photocurable stepped substrate coating composition wherein in the compound (E), the epoxy group and the hydroxy group are contained in a molar ratio of 0?(Epoxy group)/(Hydroxy group)?0.5 and the partial structure (II) is contained in a molar ratio of 0.01?(Partial structure (II))/(Partial structure (I)+Partial structure (II))?0.8.

Abstract: A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B1 and B2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B1 and B2 optionally form a ring with a carbon atom bonded to B1 and B2.