Abstract: Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching. In some embodiments, a method comprises flowing acetylene gas into a process chamber to produce a diamond like carbon deposition on a pattern mask or on at least one layer of oxide or nitride on the substrate, flowing a gas mixture of a first gas of a hydrofluorocarbon-based gas and a second gas of a fluorocarbon-based gas into the process chamber, forming a plasma from the gas mixture using an RF power source and at least one RF bias power source, performing an anisotropic etch of the at least one layer of oxide or nitride on the substrate using the pattern mask, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

Abstract: An etching method of etching a silicon nitride region with high selectivity is provided. In the etching method, a processing target object, having a silicon nitride region and a silicon-containing region having a composition different from the silicon nitride region, is accommodated in a processing vessel, and the silicon nitride region is selectively etched. In a first process, a deposit containing hydrofluorocarbon is formed on the silicon nitride region and the silicon-containing region by generating plasma of a processing gas containing a hydrofluorocarbon gas within the processing vessel. In a second process, the silicon nitride region is etched by radicals of the hydrofluorocarbon contained in the deposit. The first process and the second process are repeated alternately.

Abstract: An array antenna apparatus is configured to include a plurality of connecting conductors each provided inside a dielectric substrate in such a manner that one end of the connecting conductor is connected to a first ground conductor and another end of the connecting conductor is connected to a second ground conductor, a location of the one end connected to the first ground conductor being a location that surrounds any one of a plurality of radiation conductors.

Abstract: In adjacent two of linear array antennas, respective first element antennas and respective second element antennas are arranged so that positions of the first element antennas in the arrangement direction are shifted from each other by a half an arrangement interval and positions of the second element antennas in the arrangement direction are shifted from each other by a half the arrangement interval, the arrangement interval being an interval between the element antennas. In two of the linear array antennas, the first element antennas of one of the two and the second element antennas of the other one of the two are arranged at the same positions, and the second element antennas of the one of the two and the first element antennas of the other one of the two are arranged at the same positions, the two being located two linear array antennas away from each other.

Abstract: An etching method of etching a silicon nitride region with high selectivity is provided. In the etching method, a processing target object, having a silicon nitride region and a silicon-containing region having a composition different from the silicon nitride region, is accommodated in a processing vessel, and the silicon nitride region is selectively etched. In a first process, a deposit containing hydrofluorocarbon is formed on the silicon nitride region and the silicon-containing region by generating plasma of a processing gas containing a hydrofluorocarbon gas within the processing vessel. In a second process, the silicon nitride region is etched by radicals of the hydrofluorocarbon contained in the deposit. The first process and the second process are repeated alternately.

Abstract: An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride by performing plasma processing on a target object including the first region and the second region. In the etch method, first, a plasma of a processing gas including a fluorocarbon gas is generated in a processing chamber where the target object is accommodated. Next, the plasma of the processing gas including the fluorocarbon gas is further generated in the processing chamber where the target object is accommodated. Next, the first region is etched by radicals of fluorocarbon contained in a deposit which is formed on the target object by the generation and the further generation of the plasma of the processing gas containing the fluorocarbon gas. A high frequency powers used for the plasma generation is smaller than a high frequency power used for plasma further generation.

Abstract: An object of the present invention is to vary the directivity of an antenna (100a) while reducing the signal loss by switching circuits (5a-5d) in a splitter circuit. The switching circuits (5a-5d) in the splitter circuit connect or disconnect n (n is an integer of 2 or more) second lines (12a) connected in parallel with a first line (10a) to/from output terminals (7) connected to n antenna elements (8) having different directivities of signals. If m (m is an integer ranging from 1 to n?1) switching circuits (5b, 5d) arbitrarily selected from the n switching circuits (5a-5d) are switched to on-states, the characteristic impedance of each of the n second lines (12a) is set to a product between the characteristic impedance of the first line (10a) and the number m of switching circuits (5b and 5d) switched to on-states.

Abstract: An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride by performing plasma processing on a target object including the first region and the second region. In the etch method, first, a plasma of a processing gas including a fluorocarbon gas is generated in a processing chamber where the target object is accommodated. Next, the plasma of the processing gas including the fluorocarbon gas is further generated in the processing chamber where the target object is accommodated. Next, the first region is etched by radicals of fluorocarbon contained in a deposit which is formed on the target object by the generation and the further generation of the plasma of the processing gas containing the fluorocarbon gas. A high frequency powers used for the plasma generation is smaller than a high frequency power used for plasma further generation.

Abstract: Waveguide slot array antennas each having slots, that transmit or receive electromagnetic waves and that are formed in a front surface of a waveguide and waveguide slot array antennas each having slots that transmit or receive electromagnetic waves and that are formed in a front surface of a waveguide, and the waveguide slot array antennas and the waveguide slot array antennas are alternately arranged, the waveguide is a ridge waveguide having a ridge formed inside the waveguide, and the waveguide is a ridge waveguide having ridges, formed inside the waveguide.

Abstract: An array antenna device AAD including: a plurality of element antennas EAs; a transmission/reception module TRM, which is to be connected to one of the EAs, and includes a transmission circuit TC, a reception circuit RC, and a transmission/reception switch; a transmission/reception controller controlling by controlling an amplitude and phase of a signal passing through each TC and RC, and by switching transmission/reception; a distributor distributing a signal from a signal transmitter to each TC to transmit a distributed signal from the each TC; a combiner combining a signal from the each RC; and a receiver receiving the combined signal. A detection signal, which contains a detected amplitude and phase of the signal received by the receiver, is corrected with a piece of interconnection amplitude-phase information about the EAs to obtain a calibration value in calibration of each TRM, and calibration is conducted with the calibration value.

Abstract: According to an embodiment of the present invention, a printing apparatus that satisfactorily sucks and recovers a printhead is provided. A printing apparatus that includes a transfer member, and the first and second printheads has the following arrangement. The apparatus includes the first and second suction units which suck a plurality of nozzles of the first and second printheads, a common negative-pressure generation unit which generates a negative-pressure for suction by these suction units, and a moving unit which moves these suction units from one end to the other end of each printhead. Then, the moving unit moves the first and second suction units so as to pass through concave gaps with respect to ink discharge surfaces of the first and second printheads corresponding to the first and second suction units at different timings.

Abstract: A gate potential control device configured to control potential of a gate of a main switching element is provided herein. The gate potential control device includes: a turn-on switching element and a turn-off switching element. In a turn-off operation, a main voltage between main terminals of the main switching element increases from an on-voltage to a peak value of a surge voltage and then decreases to an off-voltage. The gate potential control device is configured to keep both of the turn-on switching element and the turn-off switching element turned off in a period which is at least a part of a specific period in the turn-off operation, the specific period being from a timing after a predetermined time lapse from a timing of rise-up of the main voltage from the on-voltage to a timing at which the main voltage reaches the peak value.

Abstract: A parallel line formed on the same plane as a patch element, close to the patch element, in a direction that is a magnetic field direction of a patch antenna and parallel to the polarization direction of the patch antenna, and a bent line shaped so as to be bent between adjacent patch elements and configured to connect their parallel lines to each other, form a coupling line, which couples part of an electromagnetic wave excited by one of the patch elements to its adjacent patch antenna, and, in the coupling line, a gap between the parallel line and the patch element and a length of the bent line are set so that an electromagnetic wave coupled from one patch antenna to its adjacent patch antenna via space and an electromagnetic wave coupled from the one patch antenna to the adjacent patch antenna via the coupling line cancel each other.

Abstract: An object of the present invention is to vary the directivity of an antenna (100a) while reducing the signal loss by switching circuits (5a-5d) in a splitter circuit. The switching circuits (5a-5d) in the splitter circuit connect or disconnect n (n is an integer of 2 or more) second lines (12a) connected in parallel with a first line (10a) to/from output terminals (7) connected to n antenna elements (8) having different directivities of signals. If m (m is an integer ranging from 1 to n?1) switching circuits (5b, 5d) arbitrarily selected from the n switching circuits (5a-5d) are switched to on-states, the characteristic impedance of each of the n second lines (12a) is set to a product between the characteristic impedance of the first line (10a) and the number m of switching circuits (5b and 5d) switched to on-states.

Abstract: There is provided an etching method for etching an antireflection film including silicon according to a pattern of a resist film by using plasma processing with respect to a processing object, the processing object including an etching object film, the antireflection film including silicon laminated on the etching object film, and the resist film laminated on the antireflection film including silicon. The method includes generating plasma of a processing gas containing a fluorocarbon gas in a processing chamber, the processing object being disposed in the processing chamber, and generating plasma of a processing gas containing an inactive gas in the processing chamber, the processing object being disposed in the processing chamber. A set of the first generating and the second generating are repeatedly performed.

Abstract: An array antenna device AAD including: a plurality of element antennas EAs; a transmission/reception module TRM, which is to be connected to one of the EAs, and includes a transmission circuit TC, a reception circuit RC, and a transmission/reception switch; a transmission/reception controller controlling by controlling an amplitude and phase of a signal passing through each TC and RC, and by switching transmission/reception; a distributor distributing a signal from a signal transmitter to each TC to transmit a distributed signal from the each TC; a combiner combining a signal from the each RC; and a receiver receiving the combined signal. A detection signal, which contains a detected amplitude and phase of the signal received by the receiver, is corrected with a piece of interconnection amplitude-phase information about the EAs to obtain a calibration value in calibration of each TRM, and calibration is conducted with the calibration value.

Abstract: A method for selectively etching a first region made of silicon oxide with respect to a second region made of silicon nitride or another material different from that of the first region. The method includes a first step for generating, in a processing container housing a workpiece to be treated, a plasma of a treatment gas including a fluorocarbon gas, an oxygen-containing gas, and an inert gas, and forming a deposit including fluorocarbon on the object to be treated; and a second step for etching the first region with radicals of the fluorocarbon included in the deposit. The first step and the second step are executed repeatedly.

Abstract: An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride by performing plasma processing on a target object including the first region and the second region. In the etch method, first, a plasma of a processing gas including a fluorocarbon gas is generated in a processing chamber where the target object is accommodated. Next, the plasma of the processing gas including the fluorocarbon gas is further generated in the processing chamber where the target object is accommodated. Next, the first region is etched by radicals of fluorocarbon contained in a deposit which is formed on the target object by the generation and the further generation of the plasma of the processing gas containing the fluorocarbon gas. A high frequency powers used for the plasma generation is smaller than a high frequency power used for plasma further generation.

Abstract: A sub-array number determinator is provided to determine a number of sub-arrays to be allocated to each of user terminals detected by a terminal position detector on a basis of relation between positions of the user terminals and a position of an antenna apparatus. An antenna selector selects sub-arrays for the number determined by the sub-array number determinator from among the sub-arrays and allocates the selected sub-arrays for the determined number to each of the user terminals. This structure is capable of preventing interference among beams for user terminals and providing excellent communication quality to the user terminals even in condition where the user terminals are adjacent to each other.

Abstract: An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride by performing plasma processing on a target object including the first region and the second region. In the etch method, first, a plasma of a processing gas including a fluorocarbon gas is generated in a processing chamber where the target object is accommodated. Next, the plasma of the processing gas including the fluorocarbon gas is further generated in the processing chamber where the target object is accommodated. Next, the first region is etched by radicals of fluorocarbon contained in a deposit which is formed on the target object by the generation and the further generation of the plasma of the processing gas containing the fluorocarbon gas. A high frequency powers used for the plasma generation is smaller than a high frequency power used for plasma further generation.