Abstract: That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, the thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.

Abstract: A first channel is formed in the side of a first diffusion plate which is on that side of a gas inlet tube and a recess is formed in the side which is on that side of an electrode plate. The first channel and the recess communicate with each other through a plurality of inlet ports. The first channel and the inlet ports form a gas flow passage L which leads to the recess from the gas inlet tube. As a process gas supplied from the gas inlet tube passes through the gas flow passage L, it is supplied, dispersed, to a hollow portion formed between the recess and the electrode plate.

Abstract: In a parallel plate type plasma processing apparatus (1), a baffle plate (28) is fitted between a ceiling (2b) and side wall (2a) of a chamber (2). The baffle plate (28) confines plasma into the upper portion of the chamber (2), and at the same time, constitutes a return route of a return current to a high frequency power source (27). A return current flowing through the baffle plate (28) returns to the high frequency power source (27) via the ceiling (2b) of the chamber (2).

Abstract: That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, die thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.

Abstract: A hard mask 105 of SiCN is formed on a fluorine-containing carbon film 103. Thus, the adhesion of the hard mask 105 to the fluorine-containing carbon 103 is improved and inhibited from being peeled off. The hard mask 105 of SiCN can have a higher etch-selectivity than those of conventional hard masks, and can have a lower dielectric constant than that of SiN or SiC.

Abstract: A hard mask 105 of SiCN is formed on a fluorine-containing carbon film 103. Thus, the adhesion of the hard mask 105 to the fluorine-containing carbon 103 is improved and inhibited from being peeled off. The hard mask 105 of SiCN can hare a higher etch-selectivity than those of conventional hard masks, and can have a lower dielectric constant than that of SiN or SiC.

Abstract: A first channel is formed in the side of a first diffusion plate which is on that side of a gas inlet tube and a recess is formed in the side which is on that side of an electrode plate. The first channel and the recess communicate with each other through a plurality of inlet ports. The first channel and the inlet ports form a gas flow passage L which leads to the recess from the gas inlet tube. As a process gas supplied from the gas inlet tube passes through the gas flow passage L, it is supplied, dispersed, to a hollow portion formed between the recess and the electrode plate.

Abstract: An inorganic insulating film 103 of SiC is formed on a fluorine-containing carbon film 102 by a chemical vapor deposition process using SiF4 and C2H4 as source gases. By using SiF4 and CF4 containing no hydrogen (H) as source gases, H inhibited from being incorporated into the inorganic insulating film 103 forming a hard mask 113. Thus, H having diffused outwardly from the inorganic insulating film 103 is bonded to fluorine (F) in the fluorine-containing carbon film 102 to form HF which inhibits the corrosion of the inorganic insulating film 103 and so forth. Thus, it is possible to inhibit the deterioration of the adhesion of the hard mask 113 formed of the inorganic insulating film 103 to other layers, such as the fluorine-containing carbon film 102.