Patents by Inventor Hilton Glavish
Hilton Glavish has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8759803Abstract: Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60°. A collimated scanned beam of ions, for example H+, is directed along a final beam path which is at an angle of at least 45° to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.Type: GrantFiled: January 16, 2014Date of Patent: June 24, 2014Assignee: GTAT CorporationInventors: Theodore Smick, Geoffrey Ryding, Hilton Glavish, Takao Sakase, William Park, Jr., Paul Eide, Drew Arnold, Ronald Horner, Joseph Gillespie
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Publication number: 20140130741Abstract: Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60°. A collimated scanned beam of ions, for example H+, is directed along a final beam path which is at an angle of at least 45° to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.Type: ApplicationFiled: January 16, 2014Publication date: May 15, 2014Applicant: GTAT CORPORATIONInventors: Theodore Smick, Geoffrey Ryding, Hilton Glavish, Takao Sakase, William Park, JR., Paul Eide, Drew Arnold, Ronald Horner, Joseph Gillespie
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Patent number: 8633458Abstract: Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60°. A collimated scanned beam of ions, for example H+, is directed along a final beam path which is at an angle of at least 45° to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.Type: GrantFiled: November 15, 2011Date of Patent: January 21, 2014Assignee: GTAT CorporationInventors: Theodore Smick, Geoffrey Ryding, Hilton Glavish, Takao Sakase, William Park, Jr., Paul Eide, Drew Arnold, Ronald Horner, Joseph Gillespie
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Publication number: 20130119263Abstract: Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60°. A collimated scanned beam of ions, for example H+, is directed along a final beam path which is at an angle of at least 45° to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.Type: ApplicationFiled: November 15, 2011Publication date: May 16, 2013Applicant: Twin Creeks Technologies, Inc.Inventors: Theodore Smick, Geoffrey Ryding, Hilton Glavish, Takao Sakase, William Park, JR., Paul Eide, Drew Arnold, Ronald Horner, Joseph Gillespie
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Patent number: 8044374Abstract: A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and the wheel is formed with tensioned spokes supporting a rim carrying the wafer supports. The spokes may be used for carrying cooling fluid to and from the wafer supports. In one embodiment, a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel.Type: GrantFiled: June 30, 2009Date of Patent: October 25, 2011Assignee: Twin Creeks Technologies, Inc.Inventors: Geoffrey Ryding, Theodore H. Smick, Kenneth Harry Purser, Hilton Glavish, Joeph Daniel Gillespie
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Patent number: 7989784Abstract: A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon. The magnet provides intensity correction across the ribbon to compensate for the dependency on the radial distance from the wheel axis of the speed at which parts of the wafers pass through the ribbon beam.Type: GrantFiled: June 30, 2009Date of Patent: August 2, 2011Assignee: Twin Creeks Technologies, Inc.Inventors: Hilton Glavish, Geoffrey Ryding, Theodore H. Smick, Kenneth Harry Purser
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Patent number: 7939812Abstract: A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ion source may use core-less saddle type coils to provide a uniform field confining the plasma in the ion source. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon.Type: GrantFiled: June 30, 2009Date of Patent: May 10, 2011Assignee: Twin Creeks Technologies, Inc.Inventors: Hilton Glavish, Geoffrey Ryding, Theodore H. Smick
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Publication number: 20100327178Abstract: A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ion source may use core-less saddle type coils to provide a uniform field confining the plasma in the ion source. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon.Type: ApplicationFiled: June 30, 2009Publication date: December 30, 2010Applicant: TWIN CREEKS TECHNOLOGIES, INC.Inventors: Hilton Glavish, Geoffrey Ryding, Theodore H. Smick
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Publication number: 20100327181Abstract: A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and the wheel is formed with tensioned spokes supporting a rim carrying the wafer supports. The spokes may be used for carrying cooling fluid to and from the wafer supports. In one embodiment, a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel.Type: ApplicationFiled: June 30, 2009Publication date: December 30, 2010Applicant: TWIN CREEKS TECHNOLOGIES, INC.Inventors: Geoffrey Ryding, Theodore H. Smick, Kenneth Harry Purser, Hilton Glavish, Joeph Daniel Gillespie
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Publication number: 20100327190Abstract: A hydrogen ion implanter for the exfoliation of silicon from silicon wafers uses a large scan wheel carrying 50+ wafers around its periphery and rotating about an axis. In one embodiment, the axis of rotation of the wheel is fixed and a ribbon beam of hydrogen ions is directed down on a peripheral edge of the wheel. The ribbon beam extends over the full radial width of wafers on the wheel. The beam is generated by an ion source providing an extracted ribbon beam having at least 100 mm major cross-sectional diameter. The ribbon beam may be passed through a 90° bending magnet which bends the beam in the plane of the ribbon. The magnet provides intensity correction across the ribbon to compensate for the dependency on the radial distance from the wheel axis of the speed at which parts of the wafers pass through the ribbon beam.Type: ApplicationFiled: June 30, 2009Publication date: December 30, 2010Applicant: TWIN CREEKS TECHNOLOGIES, INC.Inventors: Hilton Glavish, Geoffrey Ryding, Theodore H. Smick, Kenneth Harry Purser
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Publication number: 20050253089Abstract: The ion implanting apparatus according to this invention includes: an ion source for producing the ion beam 20 including desired ion species and being shaped in a sheet with a width longer than a narrow width of a substrate 82, a mass separating magnet 36 for selectively deriving the desired ion species by bending the ion beam in a direction perpendicular to a sheet face thereof, a separating slit 72 for selectively making the desired ion species pass through by cooperating with the mass separating magnet 36, and a substrate drive device 86 for reciprocatedly driving the substrate 82 in a direction substantially perpendicular to the sheet face 20s of the ion beam 20 within an irradiating area of the ion beam 20 which has passed through a separating slit 72.Type: ApplicationFiled: May 14, 2004Publication date: November 17, 2005Inventors: Syuichi Maeno, Masao Naito, Yasunori Ando, Hilton Glavish
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Patent number: 6639227Abstract: A charged particle filter provides a curved through path and has both magnetic poles for applying a magnetic field normal to the plane of curvature of the path and electrodes for applying a radial electric field. The filter is used as an energy filter downstream of an accelerator in an ion implanter. The filter can be set to provide a range of energy dispersions, to operate as an achromatic bend, or to reject lower charge state ions.Type: GrantFiled: October 18, 2000Date of Patent: October 28, 2003Assignee: Applied Materials, Inc.Inventors: Hilton Glavish, Causon Ko-Chuan Jen
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Patent number: 6525327Abstract: A beam stop (23) has a charge collecting member (40) which extends in the direction of scanning of a scanned beam by less than the total distance scanned, so that variation in the charge signal derived from the collecting member can provide a timing signal for use in monitoring alignment of the scanned beam. In a preferred embodiment, the beam stop plate (42) has slits (65-69) leading to apertures (60-64) containing charge collecting rods (73-75) located within the thickness of the beam stop plate (42).Type: GrantFiled: October 12, 2000Date of Patent: February 25, 2003Assignee: Applied Materials, Inc.Inventors: Robert John Clifford Mitchell, Michael T. Wauk, John Ruffell, Hilton Glavish, Peter Kindersley