Abstract: A method for determining the concentration of at least one acid or base in a complex solution is described. Multiple physical property values are first measured for the solution. The physical properties can be defined in the form of a set of solution property equations. The measured physical property values are then inserted into the solution property equations. When the equations are simultaneously solved, the desired concentration of the acid or basic component can be determined.

Abstract: A method for producing a spallation-resistant aluminum oxide layer on the surface of a superalloy article is described. An aluminum oxide layer is produced, typically under tensile stress, by chemical vapor deposition at low temperatures on a metal aluminide layer that has been deposited on the surface of the article. The aluminum oxide layer is then heated to induce cracking therein, which imparts spallation-resistance thereto. If desired, a thermal barrier layer may be deposited on the aluminum oxide layer.

Abstract: A method for determining the concentration of at least one acid or base in a complex solution is described. Multiple physical property values are first measured for the solution. The physical properties can be defined in the form of a set of solution property equations. The measured physical property values are then inserted into the solution property equations. When the equations are simultaneously solved, the desired concentration of the acid or basic component can be determined.

Abstract: A method for improving the overall power rating and thermodynamic efficiency of a steam and gas turbine combined cycle plant having a conventional heat recovery steam generator (“HRSG”) as part of the bottoming cycle by cooling the inlet air to the gas turbine (particularly under circumstances when the ambient inlet air temperature to the gas turbine exceeds about 60° F.) using an external chiller subsystem.

Abstract: A thermal processor for at least one semiconductor wafer includes a reactor chamber having a material substantially transparent to light including a wavelength within the range of about 200 nanometers to about 800 nanometers for holding the at least one semiconductor wafer. A coating including a material substantially reflective of infrared radiation can be present on at least a portion of the reactor chamber. A light source provides radiant energy to the at least one semiconductor wafer through the coating and the reactor chamber. The light source can include an ultraviolet discharge lamp, a halogen infrared incandescent lamp, or a metal halide visible discharge lamp. The coating can be situated on an inner or outer surface of the reactor chamber. If the reactor chamber has inner and outer walls, the coating can be situated on either the inner wall or the outer wall.

Abstract: A method for producing on the surface of a nickel- or cobalt-based superalloy article a spallation-resistant aluminum oxide layer. An aluminum oxide layer is produced, typically under tensile stress, by chemical vapor deposition at low temperatures on a metal aluminide layer that has been deposited on the surface of the article whereby nickel or cobalt from the superalloy surface reacts with an aluminum compound to form the metal aluminide layer. The aluminum oxide layer under tensile stress is then heated to induce cracking therein, which imparts spallation resistance thereto. If desired, a thermal barrier layer may be deposited on the aluminum oxide layer.