Abstract: Integration of telecommunication message services and other communication services is achieved by notifying a user of a communication system of successful receipt of a message (e.g., a facsimile message) by sending a confirmation message to the user, e.g., using e-mail, facsimile, voice and/or data communications. The user may be identified by a unique identifier, e.g., a telephone number. The confirmation message may comprise a facsimile message, an attachment which includes the received message or a computer network address of a location where information regarding the received message and/or the message itself may be accessed. For the latter case, the computer network address is preferably a universal resource locator (URL) associated with a web page at which the information and/or received message may be accessed. The information may allow the user to view the message (e.g.

Abstract: Integration of telecommunication message services and other communication services is achieved by notifying a first user of a shared telephone number of a received message (e.g., a facsimile message) by sending a notification message to the first user, e.g., using e-mail, voice and/or data communications. The user may be identified by a unique identifier appended to the shared telephone number. The notification message may comprise an attachment which includes the received message, or the notification message may comprise a computer network address of a location where the received message may be accessed. For the latter case, the computer network address is preferably a universal resource locator (URL) associated with a web page at which the received message may be accessed. The received message may be accessed by allowing the user to view the message, or it may be accessed by allowing an user to down-load the message in any of a number of forms.

Abstract: A method for growing a high quality oxide layer on the surface of a polysilicon film for use as an interpoly dielectric. The method comprises depositing a silicon film on a wafer and implanting the silicon film with phosphorous ions. The wafers are then sent into a diffusion tube to activate the dopant. This operation is carried out in an ambient of dry oxygen and the result is the silicon film is now polysilicon and an oxide layer has been grown on the polysilicon film. The wafers are then implanted using argon ions, the implantation is carried out through the oxide layer. The result is the surface layers of the polysilicon layer are rendered amorphous. The oxide layer grown on the polysilicon film is then removed. A new oxide layer is then grown on the polysilicon film. The result is an oxide layer with excellent physical and electrical characteristics.

Abstract: A method for growing tunnel oxides on a specially treated substrate surface. The method comprises steps for roughening the substrate surface to induce low tunneling voltage in the subsequently grown tunnel oxide layer. The tunnel oxide layer is grown in a low temperature steam cycle to further provide enhanced tunneling. The surface treatment comprises the steps of growing a first oxide layer to seal the surface of the substrate followed by growing a second oxide on the first oxide layer. In the preferred embodiment, a plasma etch utilizing an oxide etcher with high energy ion bombardment and an aluminum electrode is utilized to etch through the first and second oxide layers. The aluminum electrode causes sputtered aluminum on the second oxide layer's surface. The sputtered aluminum blocks the anisotropic etching leaving a grass type oxide residue on the substrate surface. The etching continues, overetching into the substrate surface.