Patents by Inventor Hing Ho Au

Hing Ho Au has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for depositing a very high phosphorus doped silicon oxide film
    Patent number: 6893983
    Abstract: A thermal activated SACVD method for depositing a phosphorus oxide layer onto a silicon oxide wafer comprising the steps of: loading an SACVD device with a silicon oxide wafer; depositing a phosphorus doped oxide (PSG) layer on the USG layer using pure oxygen and a phosphorus and silicon source; purging the SACVD device; and depositing a boron and phosphorus doped oxide (BPSG) layer on the PSG layer.
    Type: Grant
    Filed: September 13, 2001
    Date of Patent: May 17, 2005
    Assignee: TECH Semiconductor Singapore Pte Ltd.
    Inventors: Jian Sun, Hing Ho Au, Yew Hoong Phang
  • Method for depositing a very high phosphorus doped silicon oxide film
    Publication number: 20040119145
    Abstract: A thermal activated SACVD method for depositing a phosphorus oxide layer onto a silicon oxide wafer comprising the steps of: loading an SACVD device with a silicon oxide wafer; depositing a phosphorus doped oxide (PSG) layer on the USG layer using pure oxygen and a phosphorus and silicon source; purging the SACVD device; and depositing a boron and phosphorus doped oxide (BPSG) layer on the PSG layer.
    Type: Application
    Filed: September 13, 2001
    Publication date: June 24, 2004
    Applicant: TECH SEMICONDUCOR SINGAPORE PTE. LTD.
    Inventors: Jian Sun, Hing Ho Au, Yew Hoong Phang