Patents by Inventor Hiroaki Honjo
Hiroaki Honjo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11963458Abstract: Provided are a magnetic tunnel junction dement suppressing diffusion and penetration of constituent elements between a hard mask film, and a magnetic tunnel junction film and a protection layer, and a method for manufacturing the magnetic tunnel junction element. The magnetic tunnel junction element has a configuration in which a non-magnetic insertion layer (7) including Ta or the like is inserted beneath a hard mask layer (8).Type: GrantFiled: March 11, 2019Date of Patent: April 16, 2024Assignee: TOHOKU UNIVERSITYInventors: Koichi Nishioka, Tetsuo Endoh, Shoji Ikeda, Hiroaki Honjo, Hideo Sato, Sadahiko Miura
-
Publication number: 20240096915Abstract: A solid-state image pickup apparatus according to a first aspect of the present technology includes a photoelectric conversion section that generates and holds a charge in response to incident light, a transfer section that includes a V-NW transistor (Vertical Nano Wire transistor) and transfers the charge held in the photoelectric conversion section, and an accumulation section that includes a wiring layer connected to a drain of the transfer section including the V-NW transistor and accumulates the charge transferred by the transfer section. The present technology is applicable to a CMOS image sensor, for example.Type: ApplicationFiled: September 28, 2023Publication date: March 21, 2024Inventors: HIROAKI AMMO, HIROKAZU EJIRI, AKIKO HONJO
-
Patent number: 11770981Abstract: Provided are a magnetoresistance effect element and a magnetic memory having a shape magnetic anisotropy and using a recording layer having an anti-parallel coupling. A first magnetic layer (3) and a second magnetic layer (5) of the magnetoresistance effect element include a ferromagnetic substance, have a magnetization direction variable to the direction perpendicular to a film surface and are magnetically coupled in an anti-parallel direction, and a junction size D (nm), which is a length of the longest straight line on an end face perpendicular to the thickness direction of the first magnetic layer (3) and the second magnetic layer (5), a film thickness t1 (nm) of the first magnetic layer (3), and a film thickness t2 (nm) of the second magnetic layer (5) satisfy relationships D<t1 and D?t1 or D?t1 and D<t2.Type: GrantFiled: February 19, 2019Date of Patent: September 26, 2023Assignee: TOHOKU UNIVERSITYInventors: Hiroaki Honjo, Tetsuo Endoh, Shoji Ikeda, Hideo Sato, Koichi Nishioka
-
Patent number: 11765981Abstract: A magnetoresistance effect element with a small element size can be provided which achieves both an increase in a thermal stability factor ? and a reduction in a writing current IC0 and which improves a performance index ?/IC0(?A?1) obtained by dividing the thermal stability factor ? by the writing current IC0. The magnetoresistance effect element includes a first reference layer (B1), a first junction layer (11), a first magnetic layer (21), a first non-magnetic coupling layer (31), a second magnetic layer (22), and a second junction layer (12), and a film thickness of the first non-magnetic coupling layer (31) is 0.1 nm or more and 0.3 nm or less.Type: GrantFiled: June 21, 2019Date of Patent: September 19, 2023Assignee: TOHOKU UNIVERSITYInventors: Sadahiko Miura, Hiroaki Honjo, Hideo Sato, Shoji Ikeda, Tetsuo Endoh
-
Publication number: 20230292623Abstract: A magnetoresistance effect element with a small element size can be provided which achieves both an increase in a thermal stability factor ? and a reduction in a writing current IC0 and which improves a performance index ?/IC0(?A?1) obtained by dividing the thermal stability factor ? by the writing current IC0. The magnetoresistance effect element includes a first reference layer (B1), a first junction layer (11), a first magnetic layer (21), a first non-magnetic coupling layer (31), a second magnetic layer (22), and a second junction layer (12), and a film thickness of the first non-magnetic coupling layer (31) is 0.1 nm or more and 0.3 nm or less.Type: ApplicationFiled: June 21, 2019Publication date: September 14, 2023Inventors: Sadahiko MIURA, Hiroaki HONJO, Hideo SATO, Shoji IKEDA, Tetsuo ENDOH
-
Patent number: 11563169Abstract: A magnetic tunnel junction element (10) includes a configuration in which a reference layer (14) that includes a ferromagnetic material, a barrier layer (15) that includes O, a recording layer (16) that includes a ferromagnetic material including Co or Fe, a first protective layer (17) that includes O, and a second protective layer (18) that includes at least one of Pt, Ru, Co, Fe, CoB, FeB, or CoFeB are layered.Type: GrantFiled: November 18, 2016Date of Patent: January 24, 2023Assignee: TOHOKU UNIVERSITYInventors: Hideo Sato, Yoshihisa Horikawa, Shunsuke Fukami, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno, Tetsuo Endoh, Hiroaki Honjo
-
Patent number: 11462253Abstract: Provided is a magnetoresistance effect element in which the magnetization direction of the recording layer is perpendicular to the film surface and which has a high thermal stability factor ?, and a magnetic memory. A recording layer having a configuration of first magnetic layer/first non-magnetic coupling layer/first magnetic insertion layer/second non-magnetic coupling layer/second magnetic layer is sandwiched between the first and second non-magnetic layers and stacked so that a magnetic coupling force is generated between the first magnetic layer and the second magnetic layer.Type: GrantFiled: December 28, 2017Date of Patent: October 4, 2022Assignee: TOHOKU UNIVERSITYInventors: Koichi Nishioka, Tetsuo Endoh, Shoji Ikeda, Hiroaki Honjo, Hideo Sato, Hideo Ohno
-
Patent number: 11264565Abstract: An object of the invention is to provide a magnetoresistance effect element which includes a reference layer having three or more magnetic layers and which improves a thermal stability factor ? by decreasing a write error rate using an element structure that enables a wide margin to be secured between a current at which magnetization of the reference layer is reversed and a writing current Ic of a recording layer and by reducing an effect of a stray magnetic field from the reference layer. The magnetoresistance effect element includes: a first recording layer (A1); a first non-magnetic layer (11); and a first reference layer (B1), wherein the first reference layer (B1) including n-number of a plurality of magnetic layers (21, 22, . . . , 2n) and (n?1)?number of a plurality of non-magnetic insertion layers (31, 32, . . . 3(n?1)) adjacently sandwiched by each of the plurality of magnetic layers, where n?3.Type: GrantFiled: April 8, 2020Date of Patent: March 1, 2022Assignee: TOHOKU UNIVERSITYInventors: Hiroaki Honjo, Tetsuo Endoh, Hideo Sato, Shoji Ikeda
-
Patent number: 11258006Abstract: Provided are a magnetic memory element in which an improvement in properties, such as an improvement in coercive properties or a reduction in a leak current, can be attained, a method for producing the same, and a magnetic memory. The magnetic memory element, includes: a columnar stack ST in which a reference layer FX having a fixed magnetization direction, a barrier layer TL including a non-magnetic body, and a recording layer FR having a reversible magnetization direction are stacked in this order; and an insulating film which contains nitrogen and is provided to cover a lateral surface of the columnar stack, in which in one or both of the recording layer and the barrier layer, a nitrogen concentration is 7×1030 atoms/m2 or more in a position of 2 nm inside from an outer circumferential end of the columnar stack.Type: GrantFiled: August 18, 2020Date of Patent: February 22, 2022Assignee: TOHOKU UNIVERSITYInventors: Tetsuo Endoh, Masaaki Niwa, Hiroaki Honjo, Hideo Sato, Shoji Ikeda, Toshinari Watanabe
-
Publication number: 20210399208Abstract: For implementation of a magnetoresistance effect element having a quadruple interface, a magnetoresistance effect element having a small resistance area product RA, a high magnetoresistance ratio, and a high effective magnetic anisotropy energy density Kefft* is provided. A magnetoresistance effect element includes a first reference layer (B1), a first junction layer (11), a first divided recording layer (2), a second junction layer (12), a second divided recording layer (3), and a third junction layer (13). The first divided recording layer (2) has a configuration having a high magnetoresistance ratio (MR ratio), and the second divided recording layer (3) has a configuration having a high effective magnetic anisotropy energy density (Kefft).Type: ApplicationFiled: August 30, 2019Publication date: December 23, 2021Inventors: Koichi NISHIOKA, Tetsuo ENDOH, Shoji IKEDA, Hideo SATO, Hiroaki HONJO
-
Patent number: 11121310Abstract: A structure used in the formation of a spintronics element, the spintronics element to include a plurality of laminated layers, includes a substrate, a plurality of laminated layers formed on the substrate, an uppermost layer of the plurality of laminated layers being a non-magnetic layer containing oxygen, and a protection layer directly formed on the uppermost layer, the protection layer preventing alteration of characteristics of the uppermost layer while exposed in an atmosphere including H2O, a partial pressure of H2O in the atmosphere being equal to or larger than 10?4 Pa, no other layer being directly formed on the protection layer.Type: GrantFiled: July 16, 2019Date of Patent: September 14, 2021Assignee: TOHOKU UNIVERSITYInventors: Soshi Sato, Masaaki Niwa, Hiroaki Honjo, Shoji Ikeda, Hideo Ohno, Tetsuo Endo
-
Patent number: 11081641Abstract: The present invention provides a magnetoresistance effect element which has a high thermal stability factor ? and in which a magnetization direction of a recording layer is a perpendicular direction with respect to a film surface, and a magnetic memory including the same. Magnetic layers of a recording layer of the magnetoresistance effect element are divided into at least two, and an Fe composition with respect to a sum total of atomic fractions of magnetic elements in each magnetic layer is changed before stacking the magnetic layers.Type: GrantFiled: January 18, 2017Date of Patent: August 3, 2021Assignee: TOHOKU UNIVERSITYInventors: Hiroaki Honjo, Tetsuo Endoh, Shoji Ikeda, Hideo Sato, Hideo Ohno
-
Publication number: 20210135094Abstract: Provided are a magnetoresistance effect element and a magnetic memory having a shape magnetic anisotropy and using a recording layer having an anti-parallel coupling. A first magnetic layer (3) and a second magnetic layer (5) of the magnetoresistance effect element include a ferromagnetic substance, have a magnetization direction variable to the direction perpendicular to a film surface and are magnetically coupled in an anti-parallel direction, and a junction size D (nm), which is a length of the longest straight line on an end face perpendicular to the thickness direction of the first magnetic layer (3) and the second magnetic layer (5), a film thickness t1 (nm) of the first magnetic layer (3), and a film thickness t2 (nm) of the second magnetic layer (5) satisfy relationships D<t1 and D?t1 or D?t1 and D<t2.Type: ApplicationFiled: February 19, 2019Publication date: May 6, 2021Inventors: Hiroaki HONJO, Tetsuo ENDOH, Shoji IKEDA, Hideo SATO, Koichi NlSHIOKA
-
Publication number: 20210091304Abstract: [Problem] Provided are a magnetic memory element in which an improvement in properties, such as an improvement in coercive properties or a reduction in a leak current, can be attained, a method for producing the same, and a magnetic memory. [Means for Resolution] The magnetic memory element, includes: a columnar stack ST in which a reference layer FX having a fixed magnetization direction, a barrier layer TL including a non-magnetic body, and a recording layer FR having a reversible magnetization direction are stacked in this order; and an insulating film (a second insulating film 20) which contains nitrogen and is provided to cover a lateral surface of the columnar stack, in which in one or both of the recording layer and the barrier layer, a nitrogen concentration is 7×1030 atoms/m2 or more in a position of 2 nm inside from an outer circumferential end of the columnar stack.Type: ApplicationFiled: August 18, 2020Publication date: March 25, 2021Inventors: Tetsuo Endoh, Masaaki Niwa, Hiroaki Honjo, Hideo Sato, Shoji Ikeda, Toshinari Watanabe
-
Publication number: 20210057641Abstract: Provided are a magnetic tunnel junction dement suppressing diffusion and penetration of constituent elements between a hard mask film, and a magnetic tunnel junction film and a protection layer, and a method for manufacturing the magnetic tunnel junction element. The magnetic tunnel junction element has a configuration in which a non-magnetic insertion layer (7) including Ta or the like is inserted beneath a hard mask layer (8).Type: ApplicationFiled: March 11, 2019Publication date: February 25, 2021Inventors: Koichi NISHIOKA, Tetsuo ENDOH, Shoji IKEDA, Hiroaki HONJO, Hideo SATO, Sadahiko MIURA
-
Patent number: 10833256Abstract: A magnetic tunnel junction element includes, in a following stack order, an underlayer formed of a metal material, a fixed layer formed of a ferromagnetic body, a magnetic coupling layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, and a recording layer formed of a ferromagnetic body, or alternatively, the magnetic tunnel junction element includes, in a following stack order, a recording layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body, a magnetic coupling layer formed of a nonmagnetic body, an underlayer formed of a metal material, and a fixed layer formed of a ferromagnetic body, wherein the fixed layer is formed and stacked after performing plasma treatment to a surface of the underlayer having been formed.Type: GrantFiled: March 21, 2017Date of Patent: November 10, 2020Assignee: TOHOKU UNIVERSITYInventors: Hiroaki Honjo, Tetsuo Endoh, Shoji Ikeda, Hideo Sato, Hideo Ohno
-
Publication number: 20200343442Abstract: An object of the invention is to provide a magnetoresistance effect element which includes a reference layer having three or more magnetic layers and which improves a thermal stability factor ? by decreasing a write error rate using an element structure that enables a wide margin to be secured between a current at which magnetization of the reference layer is reversed and a writing current Ic of a recording layer and by reducing an effect of a stray magnetic field from the reference layer. The magnetoresistance effect element includes: a first recording layer (A1); a first non-magnetic layer (11); and a first reference layer (B1), wherein the first reference layer (B1) including n-number of a plurality of magnetic layers (21, 22, . . . , 2n) and (n-1)-number of a plurality of non-magnetic insertion layers (31, 32, . . . 3(n-1)) adjacently sandwiched by each of the plurality of magnetic layers, where n?3.Type: ApplicationFiled: April 8, 2020Publication date: October 29, 2020Inventors: Hiroaki HONJO, Tetsuo ENDOH, Hideo SATO, Shoji IKEDA
-
Patent number: 10749107Abstract: A magnetic tunnel junction element configured by stacking, in a following stack order, a fixed layer formed of a ferromagnetic body and in which a magnetization direction is fixed, a magnetic coupling layer formed of a nonmagnetic body, a reference layer formed of a ferromagnetic body and in which the magnetization direction is fixed, a barrier layer formed of a nonmagnetic body, and a recording layer formed of a ferromagnetic body, a barrier layer formed of a nonmagnetic body, and a recording layer formed by sandwiching an insertion layer formed of a nonmagnetic body between first and second ferromagnetic layers, wherein the magnetic coupling layer is formed using a sputtering gas in which a value of a ratio in which a mass number of an element used in the magnetic coupling layer divided by the mass number of the sputtering gas itself is 2.2 or smaller.Type: GrantFiled: March 17, 2017Date of Patent: August 18, 2020Assignee: TOHOKU UNIVERSITYInventors: Hiroaki Honjo, Shoji Ikeda, Hideo Sato, Tetsuo Endoh, Hideo Ohno
-
Patent number: 10658572Abstract: A magnetoresistance effect element includes first and second magnetic layers having a perpendicular magnetization direction, and a first non-magnetic layer disposed adjacent to the first magnetic layer and on a side opposite to a side on which the second magnetic layer is disposed. An interfacial perpendicular magnetic anisotropy exists at an interface between the first magnetic layer and the first non-magnetic layer, and the anisotropy causes the first magnetic layer to have a magnetization direction perpendicular to the surface of the layers. An atomic fraction of all magnetic elements to all magnetic and non-magnetic elements included in the second magnetic layer is smaller than that of the first magnetic layer.Type: GrantFiled: November 2, 2018Date of Patent: May 19, 2020Assignee: TOHOKU UNIVERSITYInventors: Hideo Sato, Shoji Ikeda, Mathias Bersweiler, Hiroaki Honjo, Kyota Watanabe, Shunsuke Fukami, Fumihiro Matsukura, Kenchi Ito, Masaaki Niwa, Tetsuo Endoh, Hideo Ohno
-
Patent number: 10644234Abstract: A method for producing a magnetic memory includes: forming a magnetic film having a non-magnetic layer between a first magnetic layer and a second magnetic layer on a substrate having an electrode layer; performing annealing treatment at a first treatment temperature in a state where a magnetic field is applied in a direction perpendicular to a film surface of the first or the second magnetic layer in vacuum; forming a magnetic tunnel junction element; forming a protective film protecting the magnetic tunnel junction element; a formation accompanied by thermal history, in which a constituent element of a magnetic memory is formed after the protective film formation on the substrate; and implementing annealing treatment at a second treatment temperature lower than the first treatment temperature on the substrate in an annealing treatment chamber, in vacuum or inert gas wherein no magnetic field is applied.Type: GrantFiled: August 28, 2017Date of Patent: May 5, 2020Assignee: TOHOKU UNIVERSITYInventors: Kenchi Ito, Tetsuo Endoh, Shoji Ikeda, Hideo Sato, Hideo Ohno, Sadahiko Miura, Masaaki Niwa, Hiroaki Honjo