Abstract: A photocatalyst device that includes a substrate having conductivity, a first photocatalyst layer in contact with the substrate, provided with at least one opening portion, and formed of one of an oxidation catalyst and a reduction catalyst, and a second photocatalyst layer provided at the opening portion and in contact with the substrate, and formed of the other of the oxidation catalyst and the reduction catalyst.

Abstract: A light-emitting device includes: a substrate; first column portions provided at the substrate; a plurality of second column portions provided at the substrate and that surround the first column portions as viewed from a normal direction of the substrate; a first semiconductor layer coupled to the first column portions; an insulating layer covering the first semiconductor layer and the second column portions; and a wiring line electrically coupled to the first semiconductor layer. Each of the first column portions and each of the second column portions includes an n-type second semiconductor layer, a p-type third semiconductor layer, and a u-type fourth semiconductor layer. The fourth semiconductor layer at each of the first column portions is injected with current to emit light. The fourth semiconductor layer at each of the second column portions is not injected with current. The wiring line overlaps at least one of the second column portions.

Abstract: The light emitting device includes a substrate, and a laminated structure provided to the substrate, and including a plurality of columnar parts, wherein the columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the laminated structure includes a third semiconductor layer which is connected to an opposite side to the substrate of the second semiconductor layer, and is same in conductivity type as the second semiconductor layer, the second semiconductor layer is disposed between the light emitting layer and the third semiconductor layer, the third semiconductor layer is provided with a recessed part, an opening of the recessed part is provided to a surface at an opposite side to the substrate side of the third semiconductor layer, and a diametrical size in a bottom of the recessed part is smaller than a diamet

Abstract: A light emitting device according to the present disclosure includes a substrate, and a columnar structure group formed of a plurality of columnar structures, wherein the plurality of columnar structures includes a plurality of first columnar structures disposed in a light emitting section, and a plurality of second columnar structures disposed in a region other than the light emitting section, the columnar structure group includes a first columnar structure group including the plurality of first columnar structures and a light propagation layer, and a second columnar structure group including the plurality of second columnar structures and an insulating layer, an inter-layer insulating layer configured to cover the columnar structure groups is disposed on the substrate, a conductive layer to be electrically coupled to the first columnar structure group is disposed on the inter-layer insulating layer, a first electrode terminal electrically coupled to the conductive layer is disposed on the inter-layer insula

Abstract: The light emitting device includes a laminated structure having a plurality of columnar parts, wherein the laminated structure includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, and a third semiconductor layer, the first semiconductor layer and the light emitting layer constitute the columnar part, the second semiconductor layer is disposed between the light emitting layer and the third semiconductor layer, the second semiconductor layer has a plurality of recessed parts, and a surface of the second semiconductor layer which defines the recessed part and a surface of the third semiconductor layer closer to the second semiconductor layer constitute an gap.

Abstract: The light emitting device includes a substrate, and a laminated structure provided to the substrate, and including a plurality of columnar parts, wherein the columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the laminated structure includes a third semiconductor layer which is connected to an opposite side to the substrate of the second semiconductor layer, and is same in conductivity type as the second semiconductor layer, the second semiconductor layer is disposed between the light emitting layer and the third semiconductor layer, the third semiconductor layer is provided with a recessed part, an opening of the recessed part is provided to a surface at an opposite side to the substrate side of the third semiconductor layer, and a diametrical size in a bottom of the recessed part is smaller than a diamet

Abstract: A photoelectric conversion apparatus includes a substrate 13 and a photodiode 9 in which a first semiconductor layer 25, a second semiconductor layer 26 and a third semiconductor layer 27 are laminated on the substrate 13 in the stated order. The second semiconductor layer 26 is an i-type semiconductor layer, and one of the first semiconductor layer 25 and the third semiconductor layer 27 is an n-type semiconductor layer, and the other is a p-type semiconductor layer. Also, the first semiconductor layer 25 is covered by the second semiconductor layer 26.

Abstract: A method of manufacturing a photoelectric conversion apparatus includes forming a switching element on one surface of a substrate, forming an interlayer insulation film so as to cover the switching element, forming a shading film on the interlayer insulation film in an area overlapping the switching element when seen from a film thickness direction of the substrate, forming a lower electrode on the interlayer insulation film, and forming a semiconductor film having a chalcopyrite structure on the lower electrode. A group 16 element is included in the semiconductor film, and in forming the semiconductor film, the shading film and the lower electrode are caused to react to the group 16 element to form a shading film including the group 16 element and a lower electrode including the group 16 element.

Abstract: A photoelectric conversion apparatus includes a TFT 10 provided on one surface of a substrate 1, a second interlayer insulation film 7 provided so as to cover the TFT 10, a shading film 9 provided on the second interlayer insulation film 7 in an area overlapping the TFT 10 when seen from a thickness direction of films that are formed on the substrate 1, a lower electrode 8 provided on the second interlayer insulation film 7, and a semiconductor film 21 having a chalcopyrite structure provided on the lower electrode 8. A group 16 element is included in the shading film 9, the lower electrode 8 and the semiconductor film 21.

Abstract: A photoelectric conversion apparatus includes a substrate 13 and a photodiode 9 in which a first semiconductor layer 25, a second semiconductor layer 26 and a third semiconductor layer 27 are laminated on the substrate 13 in the stated order. The second semiconductor layer 26 is an i-type semiconductor layer, and one of the first semiconductor layer 25 and the third semiconductor layer 27 is an n-type semiconductor layer, and the other is a p-type semiconductor layer. Also, the first semiconductor layer 25 is covered by the second semiconductor layer 26.

Abstract: A photoelectric conversion apparatus includes a TFT 10 provided on one surface of a substrate 1, a second interlayer insulation film 7 provided so as to cover the TFT 10, a shading film 9 provided on the second interlayer insulation film 7 in an area overlapping the TFT 10 when seen from a thickness direction of films that are formed on the substrate 1, a lower electrode 8 provided on the second interlayer insulation film 7, and a semiconductor film 21 having a chalcopyrite structure provided on the lower electrode 8. A group 16 element is included in the shading film 9, the lower electrode 8 and the semiconductor film 21.

Abstract: An electro-optic device is provided with an substrate, in which a stress relieving film formed of a doped silicon oxide film is formed between a third interlayer insulating film formed of a non-doped silicon oxide film and a pixel electrode formed of an aluminum film or the like. The stress relieving film is formed of the doped silicon oxide film, has a thermal expansion coefficient different from that of the third interlayer insulating film, comes in contact with the third interlayer insulating film, has a thermal expansion coefficient different from that of the pixel electrode, and comes in contact with the pixel electrode. The thermal expansion coefficients are in the following relation of Third Interlayer Insulating Film<Stress relieving Film<Pixel Electrode.

Abstract: An electro-optical device including: a reflection film which is formed at each of a plurality of pixels; a dielectric multi-layer film which is formed over the reflection film; a planarizing isolation film over the dielectric multi-layer film burying a step formed by a reflection film; and a first alignment film which is formed over the planarizing isolation film. The reflection film, the dielectric multi-layer film, the planarizing isolation film, and the first alignment film are formed on the surface facing the second substrate in the first substrate.

Abstract: A liquid-crystal apparatus has an element substrate. This element substrate contains depressions inside, and these depressions are sealed with an insulating film, a silicon dioxide coating. To this end, the insulating film is formed by chemical vapor deposition, and this coating process lasts until voids formed in the depressions are closed at the top by the insulating film. Then, the insulating coating is ground. This grinding process lasts until the insulating film is flat, but should be terminated before the voids are opened.

Abstract: An electro-optic device is provided with an substrate, in which a stress relieving film formed of a doped silicon oxide film is formed between a third interlayer insulating film formed of a non-doped silicon oxide film and a pixel electrode formed of an aluminum film or the like. The stress relieving film is formed of the doped silicon oxide film, has a thermal expansion coefficient different from that of the third interlayer insulating film, comes in contact with the third interlayer insulating film, has a thermal expansion coefficient different from that of the pixel electrode, and comes in contact with the pixel electrode. The thermal expansion coefficients are in the following relation of Third Interlayer Insulating Film<Stress relieving Film<Pixel Electrode.

Abstract: A liquid-crystal apparatus has an element substrate. This element substrate contains depressions inside, and these depressions are sealed with an insulating film, a silicon dioxide coating. To this end, the insulating film is formed by chemical vapor deposition, and this coating process lasts until voids formed in the depressions are closed at the top by the insulating film. Then, the insulating coating is ground. This grinding process lasts until the insulating film is flat, but should be terminated before the voids are opened.

Abstract: An electro-optical device including: a reflection film which is formed at each of a plurality of pixels; a dielectric multi-layer film which is formed over the reflection film; a planarizing isolation film over the dielectric multi-layer film burying a step formed by a reflection film; and a first alignment film which is formed over the planarizing isolation film. The reflection film, the dielectric multi-layer film, the planarizing isolation film, and the first alignment film are formed on the surface facing the second substrate in the first substrate.

Abstract: A semiconductor device includes: a substrate; a plurality of island-shaped light shielding films formed on the substrate; a first insulating film formed between the plurality of light shielding films; a second insulating film formed on the first insulating film and the plurality of light shielding films; and semiconductor elements each having a semiconductor film. The step difference is not generated between an interface between the first insulating film and the second insulating film and an interface between each of the plurality of light shielding films and the second insulating film. Each of the plurality of light shielding films is disposed between each of the semiconductor films and the substrate.

Abstract: An active matrix substrate includes a load circuit including a first active element performing a switching operation of a load, the first active element including a semiconductor film of a substantially polycrystalline state; a drive circuit including a second active element controlling driving the load, the second active element including a semiconductor film of a substantially single crystalline state, a hole being provided to one of a part and a peripheral part of the semiconductor film, the hole functioning a starting point for crystallizing the semiconductor film; and a substrate on a same plane of which the load circuit and the drive circuit are formed.

Abstract: A semiconductor device includes: a substrate; a plurality of island-shaped light shielding films formed on the substrate; a first insulating film formed between the plurality of light shielding films; a second insulating film formed on the first insulating film and the plurality of light shielding films; and semiconductor elements each having a semiconductor film. The step difference is not generated between an interface between the first insulating film and the second insulating film and an interface between each of the plurality of light shielding films and the second insulating film. Each of the plurality of light shielding films is disposed between each of the semiconductor films and the substrate.